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An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition (2014)

First Author: Myronov M
Attributed to:  Spintronic device physics in Si/Ge Heterostructures. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.7567/jjap.53.04eh02

Publication URI: http://dx.doi.org/10.7567/jjap.53.04eh02

Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: 4S