Nanoscale Engineering of Advanced Materials for Future Photonic and Quantum Devices

This project will explore the potential of ion beam doping with high spatial (sub-20nm) resolution to control the properties of advanced materials on the nanoscale. Electrically, optically and magnetically active dopants will be studied with the aim of enabling precisely-tuned local functionalization which may lead to the development of new advanced materials to enable the realization of future photonic and quantum technologies. Examples in include the development of single photon sources, control of topological systems, the harnessing of spin effect and the creation of qubits in semiconductor materials. The project will be mainly experimental and involve collaboration with leading groups within the UK and overseas. There is also the opportunity to develop modelling relating to the technique being developed and of the resulting physical properties.
Key objectives:
- Develop a methodology for the doping of semiconductor nanostructures with magnetic impurity ions;
- Apply the developed methodology to other ion species to deliver optical and electronic functionality;
- Characterise doped nanostructures for their electronic, optical and magnetic properties;
- Demonstrate enhanced functionality via localised doping leading to the observation of enhanced behaviour (e.g. induced magnetization) at room-temperature.