SOCRATES - SilicOn Carbide tRAnsistor Trench procEsS (SOCRATES)

SOCRATES will introduce silicon carbide (SiC) and GaN trench processing technologies to the UK, establishing a critical capability into the PEMD supply chain for power transistors. This 9-month project will define the critical semiconductor manufacturing processing steps required for introducing a disruptive SiC power MOSFET supply chain for automotive power electronics to the UK, aligned with the goals of the Driving the Electric Revolution (DER) initiative. We will establish a new UK SiC manufacturing capability - developing Trench MOSFET technology within the Materials and Components DER Centre and critically, pilot SiC trench etch processing, whilst also developing a backside SiC etch process module for future VGaN-on-SiC devices.

Current SiC diodes and transistors are still based on planar devices commercialised in 2001 and 2011 respectively -- which are limited in terms of efficiency and reliability. The proposed trench technology will revolutionise the performance of SiC transistors, with lower on-state resistances, and enhanced energy efficiencies -- to be employed in automotive systems. VGaN-on-SiC devices will further drive performance and costs advantages. This project intervention will accelerate their development at little additional cost.

This project addresses clear gaps in the PEMD UK supply chain; The lack of (1) a trench SiC power MOSFET process and (2) a high-volume supplier of SiC transistors for UK EV industry, with no current UK-based, high-volume 6"-8" SiC wafer fabs. In contrast, our international competitors are establishing key strategic PEMD links, in order to supply SiC devices to the future EV market; Infineon with Hyaundai, STMicroelectronics (already producing 4000 wafers per month) with Tesla and XFab with General Motors and Ford. Thus, the UK is in danger of losing its security of supply of this crucial technology to the UK automotive sector.