InP / AlGaInP Quantum Dot Lasers for 650-780nm Emission

Lead Research Organisation: Cardiff University
Department Name: School of Physics and Astronomy

Abstract

This project is about the development of a new material with nanoscale features that has properties that go beyond those of existing materials and will enable a number of applications that require light sources with properties that are not currently available. The applications include photodynamic therapy, which is a cancer treatment in which singlet (reactive) oxygen is generated at a specific location by using high power light with a photon energy sufficient to disassociate the oxygen molecule; DVD based optical storage, that requires dual wavelength sources to ensure backwards compatibility in new systems and which is necessary to support the semiconductor wafer manufacturing base within the UK; optical sensing, one form of which requires dual wavelength sources; and fluorescence lifetime studies, that are used, for example, for monitoring biological processes. We aim to demonstrate working devices that utilise this quantum dot material for these specific applications but also to investigate and demonstrate the basic material properties and the basic material and device physics to allow an even broader range of applications in the future. We will employ new strategies to grow material with the particular properties we require, we will characterise this material with a range of advanced experimental techniques, some of which we will develop particularly for this purpose, and will report on the properties of the material and the operation of working devices with new functionality.

Publications

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Langbein W (2010) Ultrafast gain dynamics in InP quantum-dot optical amplifiers in Applied Physics Letters

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Edwards G (2008) Dry Etching of Anisotropic Microstructures for Distributed Bragg Reflectors in AlGaInP/GaAs Laser Structures in IEEE Journal of Selected Topics in Quantum Electronics

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Smowton P (2011) Temperature-Dependent Threshold Current in InP Quantum-Dot Lasers in IEEE Journal of Selected Topics in Quantum Electronics

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Smowton P (2010) Effect of Growth Temperature on InP QD Lasers in IEEE Photonics Technology Letters

 
Description We have developed InP QD laser materials (with growth at the EPSRC III-V national centre) with world leading performance e.g. 130Acm-2 threshold current density (Jth) from a 2mm long uncoated cleaved facet laser at 300K. This is a factor of 10 lower than has been achieved elsewhere. We have also demonstrated integrated structures with etched mirrors and cavity length as short as 300um and electronically selectable operating wavelength.
Exploitation Route These laser sources are at wavelengths that are very appropriate for tissue or blood sensing. In addition short wavelength (within si detector range) quantum dots are ideal for use in single photon sources for secure communications or other quantum technologies
Sectors Digital/Communication/Information Technologies (including Software),Healthcare

 
Description Techniques developed under project used for assessment of reliability issues associated with coponents in a manufacturers product
First Year Of Impact 2011
Sector Manufacturing, including Industrial Biotechology
Impact Types Economic

 
Description Max Born Institute for Nonlinear Optics
Amount £19,493 (GBP)
Funding ID mbi001504 
Organisation Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy; Research Network Berlin 
Sector Public
Country Germany
Start 03/2009 
End 08/2009
 
Description Max Born Institute for Nonlinear Optics
Amount £19,493 (GBP)
Funding ID mbi001504 
Organisation Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy; Research Network Berlin 
Sector Public
Country Germany
Start  
 
Description Pathways to impact
Amount £10,000 (GBP)
Funding ID EP/1501193/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Academic/University
Country United Kingdom
Start 01/2011 
End 03/2011