Nano-Scale SQUID Magnetometry of Oxide Heterointerfaces
Lead Research Organisation:
Imperial College London
Department Name: Materials
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
People |
ORCID iD |
| Neil Alford (Principal Investigator) | |
| David McComb (Co-Investigator) |
Publications
Kozyrev A
(2011)
Electronically switchable bulk acoustic wave resonator based on paraelectric state ferroelectric films
in Electronics Letters
Wang Y
(2011)
Antiphase boundaries in Ba0.75Sr0.25TiO3 epitaxial film grown on (001) LaAlO3 substrate
in Applied Physics Letters
Wang Y
(2011)
Dissociation of misfit and threading dislocations in Ba0.75Sr0.25TiO3 epitaxial film
in Materials Characterization
Gammon P
(2012)
A study of temperature-related non-linearity at the metal-silicon interface
in Journal of Applied Physics
Wang Y
(2012)
Structural engineering of Ba0.5Sr0.5TiO3 epitaxial films
in Thin Solid Films
Mojarad S
(2012)
Anomalous resistive switching phenomenon
in Journal of Applied Physics
Peter Petrov (Author)
(2013)
Properties of Ultrathin SrTiO3 Films Epitaxially Grown on Graphene
Zou B
(2013)
SrRuO 3 thin films grown on MgO substrates at different oxygen partial pressures
in Journal of Materials Research
Zou B
(2016)
Growth of Epitaxial Oxide Thin Films on Graphene.
in Scientific reports
| Description | I. AFM in not accurate method for determination the surface termination of SrTiO3 substrates The TiO2 termination of the SrTiO3 substrates is critically important for fabrication of 2 DEG interfaces. Therefore we investigated the terminating layer (i.e. SrO or TiO2) of both commercially prepared and in house prepared TiO2-terminated substrates using LEIS. The results showed that, the actual termination was not 100% TiO2, despite AFM images suggesting a complete TiO2 terminated surface. II. A method was developed for reproducible fabrication on LaAlO3/SrTiO3 2DEG interface structures. The performed Transport measurements confirmed the carrier density and mobility at the interface are comparable to the previously published high quality samples. III. Memristive switching effect was observed in the current - voltage characteristics of thin LaAlO3 films grown on STO substrates. IV. Nano SQUID structures have been fabricated on top of the LaAlO3/SrTiO3 2DEG interface structures. |
| Sectors | Digital/Communication/Information Technologies (including Software) Electronics |