InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications

Lead Research Organisation: University of Sheffield
Department Name: Electronic and Electrical Engineering

Abstract

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Publications

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Velichko A (2015) H-tailored surface conductivity in narrow band gap In(AsN) in Applied Physics Letters

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Velichko A (2016) Highly-mismatched InAs/InSe heterojunction diodes in Applied Physics Letters

 
Description Incorporation of Nitrogen atom is predicted to reduce the bandgap of InAs semiconductor. If achieved, high performance infrared detectors suitable for thermal imaging can be produced. During the project, we found that Nitrogen can be incorporated into InAs. Additional of dopant atoms to increase electron concentration is routinely used in electronic devices. However in this project we found that additional of Nitrogen also has led to an unexpected increase in electron concentrations such that the photodetector performance was significantly degraded.
Exploitation Route For optoelectronic devices with narrow bandgap that require low background concentration in the active layer, incorporation of Nitrogen should be treated carefully.
Sectors Aerospace

Defence and Marine

Electronics

Energy

Environment

Healthcare

Security and Diplomacy

 
Description The high carrier concentrations obtained in InAsN followed by hydrogenation opens new possibilities for "all semiconductor" plasmonics applications for photonics and is being explored within a follow-on EU H2020 Marie-Curie training network (PROMIS).
First Year Of Impact 2015
Sector Education
 
Description H2020: Marie Curie ITN PROMIS
Amount € 546,576 (EUR)
Funding ID 641899 
Organisation European Commission 
Sector Public
Country European Union (EU)
Start 01/2015 
End 01/2019
 
Description High sensitivity, multispectral InAsNSb based infrared detectors for thermal imaging and non-contact temperature measurement.
Amount £64,584 (GBP)
Organisation Land Instruments 
Sector Private
Country United Kingdom
Start 11/2012 
End 10/2015
 
Description InAsNSb project partner Selex 
Organisation Selex ES
Department SELEX Galileo Ltd
Country United Kingdom 
Sector Private 
PI Contribution Develop low noise InAsSbN detectors and avalanche photodiodes for future focal plane arrays.
Collaborator Contribution Provide technical guidance of design of focal plane arrays.
Impact None at this stage.
Start Year 2013