InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications
Lead Research Organisation:
University of Sheffield
Department Name: Electronic and Electrical Engineering
Abstract
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Publications
Velichko A
(2015)
H-tailored surface conductivity in narrow band gap In(AsN)
in Applied Physics Letters
Velichko A
(2016)
Highly-mismatched InAs/InSe heterojunction diodes
in Applied Physics Letters
| Description | Incorporation of Nitrogen atom is predicted to reduce the bandgap of InAs semiconductor. If achieved, high performance infrared detectors suitable for thermal imaging can be produced. During the project, we found that Nitrogen can be incorporated into InAs. Additional of dopant atoms to increase electron concentration is routinely used in electronic devices. However in this project we found that additional of Nitrogen also has led to an unexpected increase in electron concentrations such that the photodetector performance was significantly degraded. |
| Exploitation Route | For optoelectronic devices with narrow bandgap that require low background concentration in the active layer, incorporation of Nitrogen should be treated carefully. |
| Sectors | Aerospace Defence and Marine Electronics Energy Environment Healthcare Security and Diplomacy |
| Description | The high carrier concentrations obtained in InAsN followed by hydrogenation opens new possibilities for "all semiconductor" plasmonics applications for photonics and is being explored within a follow-on EU H2020 Marie-Curie training network (PROMIS). |
| First Year Of Impact | 2015 |
| Sector | Education |
| Description | H2020: Marie Curie ITN PROMIS |
| Amount | € 546,576 (EUR) |
| Funding ID | 641899 |
| Organisation | European Commission |
| Sector | Public |
| Country | European Union (EU) |
| Start | 01/2015 |
| End | 01/2019 |
| Description | High sensitivity, multispectral InAsNSb based infrared detectors for thermal imaging and non-contact temperature measurement. |
| Amount | £64,584 (GBP) |
| Organisation | Land Instruments |
| Sector | Private |
| Country | United Kingdom |
| Start | 11/2012 |
| End | 10/2015 |
| Description | InAsNSb project partner Selex |
| Organisation | Selex ES |
| Department | SELEX Galileo Ltd |
| Country | United Kingdom |
| Sector | Private |
| PI Contribution | Develop low noise InAsSbN detectors and avalanche photodiodes for future focal plane arrays. |
| Collaborator Contribution | Provide technical guidance of design of focal plane arrays. |
| Impact | None at this stage. |
| Start Year | 2013 |