GaN Electronics: RF Reliability and Degradation Mechanisms
Lead Research Organisation:
CARDIFF UNIVERSITY
Department Name: Sch of Engineering
Abstract
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Organisations
Publications
Brazzini T
(2015)
Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation
in Applied Physics Letters
Brazzini T
(2015)
Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence
in Microelectronics Reliability
| Description | Demonstrated the ability to performed optical characterisation while exiting the device under controlled RF conditions. |
| Exploitation Route | Established a feasible measurement approach to investigate degradation under RF excitation. |
| Sectors | Aerospace Defence and Marine Digital/Communication/Information Technologies (including Software) Electronics |