Manufacturing of nano-engineered III-nitride semiconductors

Lead Research Organisation: University of Bath
Department Name: Electronic and Electrical Engineering

Abstract

The goal of this proposal is to develop advanced fabrication processes for Gallium Nitride (GaN) and related materials (AlN and InN), collectively the III-Nitrides, for the 21st Century manufacturing industries. The III-Nitrides are functional materials that underpin the emerging global solid state lighting and power electronics industries. But their properties enable far wider applications: solar energy conversion by photovoltaic effect and water splitting, water purification, sensing by photonic and piezoelectric effects and in non-linear optics. Many applications of these functions of the III-Nitrides are enhanced, even enabled by creating three dimensional (3D) nanostructures. As such, the particular focus of the proposed research is to develop and nanostructuring processes on a manufacturing scale and to unlock the potential of these properties of the III-Nitride semiconductors in a range of innovative materials and devices.

The research will address and resolve 1) the need of industry to be able to scale-up laboratory-based results based on individual piece or wafer fragments to batches of wafers of up to 6 inches in diameter, 2) the need to be able to design devices that are robust with the manufacturing tolerances, and 3) the need to rapidly characterise the devices to increase packaging yield. Potential commercial exploitation of the manufacturing processes and innovative materials and devices will be aided and led by the applicants' company partners.

The programme of research opens with developing the core capability of wafer-scale (up to 6 inch) nanopatterning by nanoimprint lithography and the newly developed technique of Displacement Talbot Lithography, a potentially disruptive technology for generating nanostructures. These lithographic techniques will then be integrated with additive and subtractive processes to form 3D nanostructures across whole wafers. In a major application, the developed nanofabrication techniques will be used in developing manufacturing processes for the growth by metal organic vapour phase epitaxy (MOVPE) of non-polar and semi-polar GaN templates to address the persistent problem of the quantum confined Stark effect limiting the efficiency of light emitting diodes (LEDs) and GaN based laser diodes. The computer aided design method known as Designing Centering will be developed for process optimisation to maximise the yield of nanostructured devices (initially LEDs). Another activity will be to explore the use of electron beam and optical techniques, which are capable of characterising materials and devices on the deeply sub-micron scale, as production tools for screening materials and part-processed devices.

The combination of wafer-scale nanofabrication techniques, advanced MOVPE growth, characterisation methods and Design Centering will then be deployed in the design and manufacture of innovative and emerging devices including core-shell structures for LEDs and photovoltaic applications, and nano-beam sensors that incorporate photonic crystals.

Having established the core capability for the III-Nitrides, it will be extended to nanostructuring other semiconductors, notably InP and related materials as used in the manufacture of devices for optical fibre telecommunications.

Planned Impact

This proposal is about developing manufacturing processes that will allow the properties of the III-Nitride semiconductor materials to be exploited within semiconductor devices. Fundamentally it addresses devices in which nanostructuring offers improvements to device performance, either via higher quality material or enabling new types of device. It focusses on 1) the need of industry to be able to scale-up laboratory-based results based on individual piece or wafer fragments to batches of wafers of up to 6" in diameter, 2) the need to be able to design devices that are robust with the manufacturing tolerances, and 3) the need to rapidly characterise the devices to increase packaging yield.

The programme of research will have direct impact on the industrial partners connected with the proposal. A number of the Research Projects identified in the Case for Support that will be used to inform and validate the generic manufacturing processes have been inspired through these industrial connections. The work will also impact a wider range of semiconductor companies, including support industries such as the manufacturers of process equipment. The UK-based expertise and capability will allow new ideas to be brought to market more quickly and cost-savings to be made in the manufacturing process leading to increased competitiveness of the UK semiconductor industry.

Commercialisation of the technology generated in this proposal, which is not covered by the Lambert-style agreements that will be established with the industrial partners, will be achieved by protecting any key intellectual property and know-how through patents and non-disclosure agreements, and using these to attract further research contracts and income in the short term (2-5 years from project start). The work could lead to the creation of a new spin-out company or a new product line within an existing business in the medium term. The necessary Consortium Agreement will be put in place at the start of the project, with a view to promoting impact and industrial engagement.

Highly-skilled personnel will be trained for future industrial roles, partly via industrial secondments with our project partners. Primarily the training will be directed at the RAs and research students connected with the project, but secondary training will be delivered to further researchers through inter- and intra-university seminars enabled by the networks to which the PIs and CIs belong. For example, the UK Nitrides Consortium, the management committee of which a number of the PIs serve, exists to allow for formal and informal interactions and the exchange of personnel.

There will be long term impact on society through 1) enabling new types of integrated, multifunctional sensors for lab-on-a-chip medical diagnostics and gas sensing, 2) improving the energy efficiency of light emitters to accelerate the shift towards solid state lighting, and 3) developing a UK based semiconductor manufacturing industry that is world leading.

Publications

10 25 50
 
Title Data for: "AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy" 
Description This dataset provides the as acquired electron channelling contrast (ECCI) images used to generate figures 4 a) and b) in the paper "AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy". Electron channelling contrast imaging is a non-destructive, diffraction technique performed in the scanning electron microscope. ECCI images are generally constructed by measuring the intensity of the backscattered electrons (BSEs) as the electron beam scans across the surface of a suitably-orientated sample. Any changes in crystallographic orientation and local strain can be monitored by the variation in the BSE intensity causing a change in contrast in an ECCI image. This allows the imaging of low-angle tilt and rotation boundaries, atomic steps and extended defects (e.g. TDs). The ECCI image of Fig 4 a) was acquired at an electron beam energy of 30 keV and the ECCI image of Fig 4 b) was acquired at an electron beam energy of 25 keV using an FEI Quanta 250 Schottky field emission gun environmental/variable pressure SEM operated in low vacuum mode (0.5 mbar) to avoid charging of the insulating specimens. 
Type Of Art Image 
Year Produced 2019 
URL https://pureportal.strath.ac.uk/en/datasets/8478c60c-c3c4-4237-a762-e1684cf08493
 
Title Data for: "Cathodoluminescence studies of chevron features in semi-polar (11-22) InGaN/GaN multiple quantum well structures" 
Description This dataset provides the experimental data used to generate the figures in the paper entitled "Cathodoluminescence studies of chevron features in semi-polar (11-22) InGaN/GaN multiple quantum well structures". The cathodoluminescence (CL) data discussed and presented in the paper was recorded using a variable pressure field emission scanning electron microscope (SEM, FEI Quanta 250) which is equipped with a custom-built CL hyperspectral imaging system. The CL system collects the emitted light at an angle of 45° with respect to the incident electron beam using a Cassegrain reflecting objective. The light is then dispersed using a 125 mm focal length spectrograph (Oriel MS125) and detected using an electron-multiplying charge-coupled device (Andor Newton). As the electron beam scans across the sample surface, a whole CL spectrum is recorded per pixel building up the 3D hyperspectral data set. 2D CL images can then be extracted from the hyperspectral data set, such as peak energy, intensity or half width. The electron beam-induced current (EBIC) is acquired using a Stanford pre-amplifier connected to the output of an LED. The pre-amp is connected to the computer via an analogue-to-digital converter, and a value for the voltage (from which the current can be calculated) is measured for every pixel in the map. The EBIC and CL are recorded simultaneously. Characterisation of the surface morphology was performed using atomic force microscopy (AFM, Bruker Dimension with Icon scanner) in PeakForce tapping mode with ScanAsyst Air probes. Abstract of the paper: Epitaxial overgrowth of semi-polar III-nitride layers and devices often leads to arrowhead-shaped surface features, referred to as chevrons. We report on a study into the optical, structural and electrical properties of these features occurring in two very different semi-polar structures, a blue-emitting multiple quantum well (MQW) structure and an amber-emitting light-emitting diode (LED). Cathodoluminescence (CL) hyperspectral imaging has highlighted shifts in their emission energy, occurring in the region of the chevron. These variations are due to different semi-polar planes introduced in the chevron arms resulting in a lack of uniformity in the InN incorporation across samples, and the disruption of the structure which could cause a narrowing of the QWs in this region. Atomic force microscopy has revealed that chevrons can penetrate over 150 nm into the sample, and quench light emission from the active layers. The dominance of non-radiative recombination in the chevron region was exposed by simultaneous measurement of CL and the electron beam-induced current (EBIC). Overall these results provide an overview of the nature and impact of chevrons on the luminescence of semi-polar devices. 
Type Of Art Image 
Year Produced 2018 
URL https://pure.strath.ac.uk/portal/en/datasets/data-for-cathodoluminescence-studies-of-chevron-feature...
 
Title Data for: "Determining GaN nanowire polarity and its influence on light emission in the scanning electron microscope" 
Description Electron backscatter diffraction (EBSD) patterns and backscatter electron (BSE) intensity image derived from EBSD patterns, BSE and secondary electron (SE) images and cathodoluminescence (CL) hyperspectral images 
Type Of Art Image 
Year Produced 2019 
URL https://pureportal.strath.ac.uk/en/datasets/b152a121-3495-4235-b9cd-985bf1355cd8
 
Title Data for: "Luminescence behaviour of semi-polar (10-11) InGaN/GaN 'bow-tie' structures on patterned Si substrates" 
Description This dataset provides the experimental data used to generate the figures in the paper entitled "Luminescence behaviour of semi-polar (10-11) InGaN/GaN 'bow-tie' structures on patterned Si substrates". The room temperature cathodoluminescence (CL) data was recorded using a variable pressure field emission scanning electron microscope (SEM, FEI Quanta 250) which is equipped with a custom-built CL hyperspectral imaging system. The CL system collects the emitted light at an angle of 45° with respect to the incident electron beam using a Cassegrain reflecting objective. The light is then dispersed using a 125 mm focal length spectrograph (Oriel MS125) and detected using an electron-multiplying charge-coupled device (Andor Newton). Low temperature CL was performed in a field emission gun SEM (Zeiss LEO DSM 982) equipped with custom-built liquid helium flow cryostage (CryoVac). The light was collected using a UV-enhanced glass fibre placed in close contact with the sample, dispersed with a 90 cm focal length monochromator (SPEX 1702) and detected using a liquid nitrogen-cooled, UV-optimised CCD. As the electron beam scans across the sample surface, a whole CL spectrum is recorded per pixel building up the 3D hyperspectral data set. 2D CL images can then be extracted from the hyperspectral data set, such as peak energy, intensity or half width. The room temperature and low temperature (12 K) measurements were acquired with a beam voltage of 5 kV. Electron channelling contrast imaging is a non-destructive, diffraction technique performed in the SEM. ECC images are generally constructed by measuring the intensity of the backscattered electrons (BSEs) as the electron beam scans across the surface of a suitably-orientated sample. Any changes in crystallographic orientation and local strain can be monitored by the variation in the BSE intensity causing a change in contrast in an ECC image. This allows the imaging of low-angle tilt and rotation boundaries, atomic steps and extended defects (e.g. TDs). ECCI is carried out in a forward scattering geometry in a field emission SEM (FEI Sirion 200), equipped with an electron-sensitive diode and a custom-built signal amplifier. Electron backscatter diffraction (EBSD) measurements were performed using a Nordlys EBSD detector from Oxford Instruments attached to an FEI Quanta 250 variable pressure field emission SEM. The EBSD data was acquired at 20 kV and at a sample tilt of 70° with respect to the normal of the incident electron beam. For the analysis of the EBSD data, the electron backscatter pattern (EBSP) from each pixel was compared to simulated dynamical Kikuchi patterns using a Bloch wave approach. Abstract of the paper: In this work, we report on the innovative growth of semi-polar 'bow-tie'-shaped GaN structures containing InGaN/GaN multiple quantum wells (MQWs), and on their structural and luminescence characterisation. We investigate the impact of growth on patterned (113) Si substrates which results in the bow-tie cross-section with upper surfaces having the (10-11) orientation. Room temperature cathodoluminescence (CL) hyperspectral imaging reveals two types of extended defects: black spots appearing in intensity images of the GaN near band edge emission; and dark lines running parallel in the direction of the Si stripes in MQW intensity images. Electron channelling contrast imaging (ECCI) identifies the black spots as threading dislocations (TDs) propagating to the inclined (10-11) surfaces. Line defects in ECCI, propagating in the [1-210] direction parallel to the Si stripes, are attributed to misfit dislocations (MDs) introduced by glide in the basal (0001) planes at the interfaces of the MQW structure. Identification of these line defects as MDs within the MQWs is only possible because they are revealed as dark lines in the MQW CL intensity images, but not in the GaN intensity images. Low temperature CL spectra exhibit additional emission lines at energies below the GaN bound exciton emission line. These emission lines only appear at the edge or the centre of the structures where two (0001) growth fronts meet and coalesce (join of the bow-tie). They are most likely related to basal-plane or prismatic stacking faults or partial dislocations at the GaN/Si interface and the coalescence region. 
Type Of Art Image 
Year Produced 2019 
URL https://pureportal.strath.ac.uk/en/datasets/c71c237d-a544-4bf5-b7d3-1432ea22608e
 
Title Data for: Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging 
Description The data set for the article contains secondary electron images, backscatter electron using a scanning electron microscope. The dataset contains data acquired from a (11-22) semi-polar GaN thin film overgrown on regularly arrayed GaN micro-rod array templates grown by metal organic vapour phase epitaxy. Figure numbers in the data file descriptions refer to the Journal of Applied Physics paper by Naresh Kumar et al. (2018) referenced in the related publications section. Figures 1 and 2 are schematic of the sample and the experimental setup. Figure 3 is ECCI acquired in the forescatter geometry showing individual dislocations as well as clustering of threading dislocations in a periodic fashion. The periodicity of the clustering is due to the underlying micro-rod template. Figure 4: ECCI acquired in the forescatter geometry revealing basal plane stacking faults (BSFs) (a) Bright lines corresponding to BSFs showing contrast reversal as seen in (b). Figure 5. (a) SE image showing topography and (b) ECCI showing BSFs, the sample is not tilted (proper backscattered geometry). Please note both the images are from the same area. Figure 6. Plan view TEM image acquired using a g = (10-10) with the specimen viewed along the [-1-120] revealing basal plane stacking faults. Article Abstract: Taking advantage of electron diffraction based measurements, in a scanning electron microscope, can deliver non-destructive and quantitative information on extended defects in semiconductor thin films. In the present work, we have studied a (11-22) semi-polar GaN thin film overgrown on regularly arrayed GaN micro-rod array templates grown by metal organic vapour phase epitaxy. We were able to optimise the diffraction conditions to image and quantify basal plane stacking faults (BSFs) and threading dislocations (TDs) using electron channelling contrast imaging (ECCI). Clusters of BSFs and TDs were observed with the same periodicity as the underlying micro-rod array template. The average BSF and TD density was estimated to be ˜ 4 × 104 cm-1 and ˜ 5 × 108 cm-2 respectively. The contrast seen for BSFs in ECCI is similar to that observed for plan-view transmission electron microscopy images, with the only difference being the former acquires the backscattered electrons and latter collects the transmitted electrons. Our present work shows the capability of ECCI for quantifying extended defects in semi-polar nitrides and represents a real step forward for optimising the growth conditions in these materials. 
Type Of Art Image 
Year Produced 2018 
URL https://pure.strath.ac.uk/portal/en/datasets/data-for-imaging-basal-plane-stacking-faults-and-disloc...
 
Description This award allowed a large number of semiconductor structures and devices to be made that were enabled or enhanced by nanotechnology. New techniques were developed to pattern large areas at the nanoscale. Particular highlights were developing processes to improve the efficiency of ultraviolet-emitting light-emitting diodes, creating nanostructured materials that emit in the far-ultraviolet, and creating a new way to create ultra-small, ultra-compact and ultra-high-efficiency light-emitting diodes.
Exploitation Route The research has been detailed in a number of publications in open access journals. Furthermore the participants are taking forward aspects of the research in subsequent research proposals that either have been funded or awaiting a decision on funding.
Sectors Digital/Communication/Information Technologies (including Software),Electronics,Healthcare,Manufacturing, including Industrial Biotechology

 
Description Displacement Talbot Lithography: accelerating a versatile and low-cost patterning technique for precision manufacturing
Amount £727,375 (GBP)
Funding ID EP/V055224/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 08/2021 
End 09/2024
 
Description Manufacturing of Large-Area InP on nano-V-grooved CMOS compatible Si
Amount £63,000 (GBP)
Organisation Cardiff University 
Sector Academic/University
Country United Kingdom
Start 03/2020 
End 04/2021
 
Title Micromanipulators for nanoprobing 
Description Two nanoprobes, mounted on micromanipulators, have been installed within a scanning electron microscope allowing measurements of mechanical (e.g. stress, force) and electrical (e.g. IV, EBIC) on a local scale. 
Type Of Material Improvements to research infrastructure 
Year Produced 2020 
Provided To Others? Yes  
Impact Results starting to be reported in journal publications 
 
Title Cathodoluminescence and wavelength-dispersive X-ray measurements of InAlGaN 
Description This data is the result of cathodoluminescence hyperspectral imaging and wavelength-dispersive X-ray measurements carried out on a set of InAlGaN epilayers, grown at the Technische Universität Berlin using a range of different precursor fluxes. Details of the samples are given in Sample_details.txt, details of the measurements in Measurement_details.txt, and a description of the proprietary cathodoluminescence file format in File_formats.txt. Further analysis and interpretation of this data is presented in the associated journal article, and figure numbers referred to in the data correspond to those used in this paper: G. Kusch et al.,"Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1-x-yN", Jap. J. Appl. Phys. (2019). 
Type Of Material Database/Collection of data 
Year Produced 2019 
Provided To Others? Yes  
 
Title Data for: "Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaN" 
Description This dataset provides the experimental data used to generate the figures in the paper entitled "Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaN". The cathodoluminescence (CL) data discussed and presented in the paper was recorded using a variable pressure field emission scanning electron microscope (SEM, FEI Quanta 250) which is equipped with a custom-built CL hyperspectral imaging system. The CL system collects the emitted light at an angle of 45° with respect to the incident electron beam using a Cassegrain reflecting objective. The light is then dispersed using a 125 mm focal length spectrograph (Oriel MS125) and detected using an electron-multiplying charge-coupled device (Andor Newton). As the electron beam scans across the sample surface, a whole CL spectrum is recorded per pixel building up the 3D hyperspectral data set. 2D CL images can then be extracted from the hyperspectral data set, such as peak energy, intensity or half width. The room temperature CL measurements were acquired with a beam voltage of 5 kV. For the variable temperature photoluminescence (PL) measurements the samples were placed inside a liquid helium flow cryostat. A monochromator (SPEX1704) with a 1 m focal length and liquid nitrogen-cooled CCD were used for the detection of the emitted luminescence, which was excited by the 325 nm line of a He-Cd laser. Abstract of the paper: We investigate the influence of different types of template micro-patterning on defect reduction and optical properties of non-polar GaN using detailed luminescence studies. Non-polar (11-20) (or a-plane) GaN exhibits a range of different extended defects compared with its more commonly used c-plane counterpart. In order to reduce the number of defects and investigate their impact on luminescence uniformity, non-polar GaN was overgrown on four different GaN microstructures. The micro-patterned structures consist of a regular microrod array; a microrod array where the -c-side of the microrods has been etched to suppress defect generation; etched periodic stripes and finally a subsequent combination of etched stripes and etched microrods (double overgrowth). Overall the presence of extended defects, namely threading dislocations and stacking faults (SFs) is greatly reduced for the two samples containing stripes compared with the two microrod samples. This is evidenced by more uniform emission and reduction in dark regions of non-radiative recombination in room temperature cathodoluminescence imaging as well as a reduction of the SF emission line in low temperature photoluminescence. The observed energy shifts of the GaN near band edge emission are related to anisotropic strain relaxation occurring during the overgrowth on these microstructures. A combination of stripes and microrods is a promising approach for defect reduction and emission uniformity in non-polar GaN for applications in light-emitting devices as well as power electronics. 
Type Of Material Database/Collection of data 
Year Produced 2020 
Provided To Others? Yes  
URL https://pureportal.strath.ac.uk/en/datasets/feded221-778b-4eae-8cf3-5322a3aec763
 
Title Data for: "Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films" 
Description Scanning electron microscope images, electron channelling contrast micrographs, Electron backscatter diffraction data and cathodoluminescence data 
Type Of Material Database/Collection of data 
Year Produced 2019 
Provided To Others? Yes  
URL https://pureportal.strath.ac.uk/en/datasets/b5238863-a088-4f30-8b13-2625260eb73a
 
Title Data set for Hybrid top-down/bottom-up fabrication of highly uniform and organized faceted AlN nanorod scaffold 
Description This dataset contains scanning electron microscopy (SEM) images, transmission electron microscopy (TEM) pictures and Catodoluminescence (CL) measurements carried out on AlN nanorod. The samples were fabricated via a hybrid top-down/bottom up approach. Displacement Talbot Lithography is used to fabricate Au/Ni metal dots to act as a hard etch mask. Ultrathin AlN nanorod arrays are created thanks to a two-step dry-wet etching process with first, chlorine-based dry etching of an AlN template and second, KOH-based wet etching. AlN facet recovery is performed by Metal Organic Vapor Phase Epitaxy for various regrowth time. TEM and CL were used to assess the structural and optical quality of the AlN nanorod, respectively. 
Type Of Material Database/Collection of data 
Year Produced 2018 
Provided To Others? Yes  
 
Title Dataset for "'Double' Displacement Talbot Lithography: fast, wafer-scale, direct-writing of complex periodic nanopatterns" 
Description This study developed a new low-cost nanolithographic tool for creating periodic arrays of complex, nano-motifs, across large areas within minutes. Displacement Talbot Lithography is combined with lateral nanopositioning to enable large-area patterning with the flexibility of a direct-write system. This enables the creation of different periodic patterns in short timescales using a single mask with no mask degradation. The dataset includes images of Matlab models (in .csv format) and SEM experimental pictures of the different experiments realised (discrete lateral illumination, continuous displacements during one illumination). 
Type Of Material Database/Collection of data 
Year Produced 2019 
Provided To Others? Yes  
 
Title Dataset for "AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy" 
Description This dataset contains scanning electron microscopy (SEM) images of nano-pillar-patterned sapphire created via Displacement Talbot Lithography and Inductively coupled plasma dry etching. 
Type Of Material Database/Collection of data 
Year Produced 2019 
Provided To Others? Yes  
 
Title Dataset for "Deep-UV Emission From Highly-Ordered AlGaN/AlN Core-Shell Nanorods" 
Description This dataset contains scanning electron microscopy (SEM) images, transmission electron microscopy (TEM) pictures and Catodoluminescence (CL) measurements carried out on AlN and AlGaN/AlN core-shell nanorod. The samples were fabricated via a hybrid top-down/bottom up approach. Displacement Talbot Lithography is used to fabricate Au/Ni metal dots to act as a hard etch mask. Ultrathin AlN nanorod arrays are created; thanks to a two-step dry-wet etching process with first, chlorine-based dry etching of an AlN template and second, KOH-based wet etching. AlN facet recovery and AlGaN quantum well growth is performed by Metal Organic Vapor Phase Epitaxy. TEM and CL were used to assess the structural, chemical and optical quality of the various nanorod samples. 
Type Of Material Database/Collection of data 
Year Produced 2018 
Provided To Others? Yes  
 
Title Dataset for "Displacement Talbot Lithography for nano-engineering of III-nitride materials" 
Description This dataset contains scanning electron microscopy (SEM) images of various nano-patterns. The nano-patterns are first created in the resist via Displacement Talbot Lithography. The nano-patterns in the resist are then used to create dielectric or metal mask, respectively via Inductively coupled plasma dry etching or lift-off. Finally, the masks are employed either for the bottom-up selective area growth (via metal organic vapour phase epitaxy) or for the top-down fabrication of nanostructures. A combination of top-down etching and bottom-up can also be employed. 
Type Of Material Database/Collection of data 
Year Produced 2019 
Provided To Others? Yes  
 
Title Dataset for "Displacement Talbot Lithography: an alternative technique to fabricate nanostructured metamaterials" 
Description This dataset contains scanning electron microscopy (SEM) secondary electron (SE) images of linear gratings resist, dashes and holes in resist that were obtained using Displacement Talbot lithography. These techniques were used to assess the dimensions of the resist features that were obtained with linear grating mask, using single or double exposure steps. SE images also shows the lift-off profile used in order to obtain metamaterial 'fishnet' like metallic structures. The dimensions of the measured linear gratings, dashes and holes are written in text files. 
Type Of Material Database/Collection of data 
Year Produced 2017 
Provided To Others? Yes  
 
Title Dataset for "Influence of MOVPE environment on the selective area thermal etching of GaN nanohole arrays" 
Description This dataset contains scanning electron microscopy (SEM) images of various selective area thermal etching (SATE) experiments. SiN circular nano-opening are created via Displacement Talbot Lithography and Inductively coupled plasma dry etching. Then thermal etching is performed for various conditions within a metal organic vapour phase epitaxy growth reactor to create highly organized GaN nanoholes. 
Type Of Material Database/Collection of data 
Year Produced 2020 
Provided To Others? Yes  
URL https://researchdata.bath.ac.uk/id/eprint/726
 
Title Dataset for "Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities" 
Description This dataset contains scanning electron microscopy (SEM) images, Catodoluminescence (CL), MicroPL and Confocal PL measurements and Finite-Difference Time-Domain (FDTD) simulations carried out on InGaN/GaN nanotube microcavities. The samples were fabricated via a combination of Displacement Talbot Lithography for patterning and inductively coupled plasma top-down dry-etching. SEM imaging were used to assess first, the patterning of SiNx mask, and second, the InGaN/GaN nanotube morphology and dimensions. CL were used to assess the optical properties of individual InGaN/GaN nanotube. MicroPL and Confocal PL were used to carry out continuous excitation at room temperature of isolated InGaN/GaN nanotube. FDTD simulations were used to investigate the nature of the resonant modes. Correlation between PL techniques and FDTD simulation suggests that both mixed whispering gallery - Fabry-Perot cavity modes are observed within the single nanotube. 
Type Of Material Database/Collection of data 
Year Produced 2017 
Provided To Others? Yes  
 
Title Dataset for "Understanding the resolution limit of Displacement Talbot Lithography" 
Description Displacement Talbot lithography (DTL) is a new technique for patterning large areas with sub-micron periodic features with low cost. It has application in fields which cannot justify the cost of deep-UV photolithography such as plasmonics, photonic crystals, and metamaterials and competes with techniques such as nanoimprint and laser interference lithography. It is based on the interference of coherent light through a periodically patterned photomask. However, the factors affecting the resolution limit of the technique are unknown. Through computer simulations, we show the impact of the mask parameters on the size of the features that can be achieved and describe the separate figures of merit that should be optimised for successful patterning. Both amplitude and phase masks are considered for hexagonal and square arrays of openings on the mask. For large pitches, amplitude masks are shown to give the best resolution, whereas, for small pitches, phase masks are superior due to the shorter exposure time that is required. We also show how small changes in the mask pitch can dramatically affect the resolution achievable. As a result, this study provides important information for choosing new masks for DTL for targeted applications. This dataset is the result of a modelling but also experimental investigation of the DTL resolution for a specific resist and wavelength. The data was acquired using a Hitachi S-4300 scanning electron microscope (SEM), and a MATLAB code. 
Type Of Material Database/Collection of data 
Year Produced 2019 
Provided To Others? Yes  
URL https://researchdata.bath.ac.uk/id/eprint/570
 
Title Dataset for 'Design and fabrication of enhanced lateral growth for dislocation reduction and strain management in GaN using nanodashes' 
Description This dataset contains the results of scanning electron microscopy (SEM) secondary electron (SE) images, panchromatic cathodoluminescence (CL) imaging and Electron Channelling Contrast Imaging (ECCI) and Raman spectroscopy on GaN epitaxial layers. These techniques were used to assess the morphology of the GaN crystal growth, and the dislocation density and strain in planar layers. 
Type Of Material Database/Collection of data 
Year Produced 2017 
Provided To Others? Yes  
 
Title Dataset for: "Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN" 
Description This dataset provides the experimental data used to generate figure 3 in the paper entitled "Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN". The cathodoluminescence (CL) data discussed and presented in the paper was recorded using a variable pressure field emission scanning electron microscope (SEM, FEI Quanta 250) which is equipped with a custom-built CL hyperspectral imaging system. The CL system collects the emitted light at an angle of 45° with respect to the incident electron beam using a Cassegrain reflecting objective. The light is then dispersed using a 125 mm focal length spectrograph (Oriel MS125) and detected using an electron-multiplying charge-coupled device (Andor Newton). As the electron beam scans across the sample surface, a whole CL spectrum is recorded per pixel building up the 3D hyperspectral data set. 2D CL images can then be extracted from the hyperspectral data set, such as peak energy, intensity or half width. Abstract of the paper: A novel overgrowth approach has been developed in order to create a multiple-facet structure consisting of only non-polar and semi-polar GaN facets without involving any c-plane facets, allowing the major drawbacks of utilising c-plane GaN for the growth of III-nitride optoelectronics to be eliminated. Such a multiple-facet structure can be achieved by means of overgrowth on nonpolar GaN micro-rod arrays on r-plane sapphire. InGaN multiple quantum wells (MQWs) are then grown on the multiple-facet templates. Due to the different efficiencies of indium incorporation on non-polar and semi-polar GaN facets, multiple-colour InGaN/GaN MQWs have been obtained. Photoluminescence (PL) measurements have demonstrated that the multiple-colour emissions with a tunable intensity ratio of different wavelength emissions can be achieved simply through controlling the overgrowth conditions. Detailed cathodoluminescence measurements and excitationpower dependent PL measurements have been performed, further validating the approach of employing the multiple facet templates for the growth of multiple colour InGaN/GaN MQWs. It is worth highlighting that the approach potentially paves the way for the growth of monolithic phosphor-free white emitters in the future. Data available on publication of related research output 
Type Of Material Database/Collection of data 
Year Produced 2018 
Provided To Others? Yes  
 
Title Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structure 
Description This dataset contains the results of scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM) Energy Dispersive X-ray (EDX) and Catodoluminescence (CL) measurements carried out on InGaN/GaN core-shell nanostructures. The samples are highly regular arrays of GaN etched cores onto which various InGaN layer thickness were grown using fixed metal organic vapour phase epitaxy (MOVPE) growth conditions. Three different growth time were used to grow InGaN layer with various thickness: 2min, 6min, and 18min, either with or without a GaN capping layer. SEM and AFM characterization techniques were used to assess the nanorod morphology and roughness of the lateral m-plane facets. TEM were used to investigate the structural properties and assess the InGaN thickness of the m-plane facets. EDX measurements were used to assess the InGaN layer composition of the m-plane facet. CL were used to assess the optical properties of each InGaN layer thickness. Correlation of SEM, AFM, TEM, EDX and CL allow to describe the and explain the growth mechanism of a thick InGaN shell grown on GaN NRs formed by combined top-down etching and regrowth. 
Type Of Material Database/Collection of data 
Year Produced 2016 
Provided To Others? Yes  
 
Title Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices 
Description This dataset is the result of an investigation into the impact of the temperature and pressure on the fabrication of Gallium Nitride nanostructures. The dataset contains data acquired from etched nanorods and nanopores.The data was acquired using a Hitachi S-4300 scanning electron microscope (SEM). The secondary electron (SE) images were produced using the manufacturer-supplied software. Figure numbers in the data file descriptions refer to the Microelectronic Engineering article by Le Boulbar et al. (2016) referenced in the related publications section. 
Type Of Material Database/Collection of data 
Year Produced 2016 
Provided To Others? Yes  
 
Title Hybrid top-down/bottom-up fabrication of regular arrays of AlN nanorods for deep-UV core-shell LEDs: Dataset 
Description This dataset contains scanning electron microscopy (SEM) images and Catodoluminescence (CL) measurements carried out on AlN nanorod. The samples were fabricated via a hybrid top-down/bottom up approach. Displacement Talbot Lithography is used to fabricate Au/Ni metal dots to act as a hard etch mask. AlN nanorod arrays are created by inductively coupled plasma dry etching of an AlN template. AlN facet recovery is performed by Metal Organic Vapor Phase Epitaxy regrowth. CL was used to assess the optical quality of the AlN nanorod. 
Type Of Material Database/Collection of data 
Year Produced 2017 
Provided To Others? Yes  
 
Description A MOU was signed between the Unversity of Sheffield and Universiti Sains Malaysia in order to initiate A Networking On Nitrides Semiconductor Optoelectronics And Electronics 
Organisation University of Science Malaysia
Country Malaysia 
Sector Academic/University 
PI Contribution The Sheffield GaN center led by Professor Tao Wang has established an internationally recognized reputation in the field of III-nitride opto-electronics, ranging from epitaxial growth, through material characterization to device fabrication.
Collaborator Contribution The team at Universiti Sains Malaysia has good experience in technology commercializing. Therefore, both team aims at enhancing academic exchange and cooperation in this field
Impact The MOU was just signed several weeks ago. Hopefully, we will have results soon
Start Year 2019
 
Description Large area nanoengineered Si substrates for InP 
Organisation Cardiff University
Country United Kingdom 
Sector Academic/University 
PI Contribution Development of processes and samples for further growth of semiconductor material.
Collaborator Contribution Growth of semiconductor material onto sample patterned by the University of Bath.
Impact No outputs yet.
Start Year 2019
 
Description Nanopatterned solar cells 
Organisation University of Cambridge
Country United Kingdom 
Sector Academic/University 
PI Contribution Nanopatterned solar cell samples for further processing in Cambridge
Collaborator Contribution Intellectual leadership, design expertise and further processing.
Impact "Ultra-thin photovoltaics with integrated nanophotonic light-trapping layer" Presentation at SPIE Photonics West Conference, March 2021.
Start Year 2019
 
Description Nanostructured UV LEDs 
Organisation Leibniz Association
Department Ferdinand-Braun-Institut
Country Germany 
Sector Academic/University 
PI Contribution The nanostructuring capability developed as part of this grant has been used to create new LED devices for further processing at Ferdinand Braun Institute and Technical University Berlin.
Collaborator Contribution Our partners have used their semiconductor growth infrastructure to grow new structures in order to improve the emission properties.
Impact https://doi.org/10.1016/j.jcrysgro.2019.125343
Start Year 2017
 
Description Nanostructured UV LEDs 
Organisation Technical University Berlin
Country Germany 
Sector Academic/University 
PI Contribution The nanostructuring capability developed as part of this grant has been used to create new LED devices for further processing at Ferdinand Braun Institute and Technical University Berlin.
Collaborator Contribution Our partners have used their semiconductor growth infrastructure to grow new structures in order to improve the emission properties.
Impact https://doi.org/10.1016/j.jcrysgro.2019.125343
Start Year 2017
 
Description Nanostructured templates for nanorod growth 
Organisation University of Clermont Auvergne
Country France 
Sector Academic/University 
PI Contribution Preparation of patterned templates for further growth of semiconductor nanorods.
Collaborator Contribution Growth of semiconductor nanorods on the patterned templates provided by the University of Bath
Impact Mohammed Zeghouane et al 2020 Nano Futures 4 025002, https://doi.org/10.1088/2399-1984/ab8450
Start Year 2019
 
Description Sublimation of gallium nitride 
Organisation National Center for Scientific Research (Centre National de la Recherche Scientifique CNRS)
Country France 
Sector Academic/University 
PI Contribution We prepared nanopatterned samples prepared for further experimentation by the CRHEA-CNRS
Collaborator Contribution CRHEA-CNRS performed sublimation experiments on the samples that we supplied followed by optical characterisation.
Impact https://doi.org/10.7567/1882-0786/ab0d32 https://doi.org/10.1038/s41378-019-0101-2
Start Year 2018
 
Title DBR Enhanced micro-LEDs 
Description DBR Enhanced micro-LEDs 
IP Reference UK Patent Application No. 1910352.2, 
Protection Patent application published
Year Protection Granted 2019
Licensed Commercial In Confidence
Impact Awaiting impact
 
Title LED arrays 
Description A new method for the growth of micro-LED arrays 
IP Reference GB1816455.8 
Protection Patent application published
Year Protection Granted 2018
Licensed Commercial In Confidence
Impact Major impact on developing III-nitride based microLEDs for micro-display, Ultra-fast visible light communications, AR/VR
 
Title Non-Polar GaN 
Description A new method for the growth of Non-Polar GaN on foreign substrates 
IP Reference GB1807486.4 
Protection Patent application published
Year Protection Granted 2018
Licensed No
Impact Major impact on high frequency and high temperature power and RF electronics
 
Title multiple-colored Micro-LEDs 
Description multiple-colored Micro-LEDs 
IP Reference UK Patent Application No. 1910348.0, 19th July 2019 
Protection Patent application published
Year Protection Granted 2019
Licensed Commercial In Confidence
Impact awaiting impact
 
Company Name EPIPIX LIMITED 
Description Dedicate to manufacturing III-nitride opto-electronics 
Year Established 2020 
Impact This spinout is just established a few weeks ago. It is expected to have a major impact in a wide range of industrial field, such as display, AI, communications, etc
 
Description 2020 Industrial open day 
Form Of Engagement Activity A formal working group, expert panel or dialogue
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Industry/Business
Results and Impact It aims to establish new collaboration with industry and further strengthen existing collaboration with industry, and to support the UK advanced manufacturing.
Year(s) Of Engagement Activity 2020
 
Description BJ: 2019 UKNC Conference, Glasgow, UK, 9-10th January 2019 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Postgraduate students
Results and Impact Present the latest results on developing Nonpolar a-plane (11-20) InGaN-based light-emitting diodes grown on micro-rod templates
Year(s) Of Engagement Activity 2019
 
Description CTC: Lecture Series in India as part of 'Science and Beyond' organised by the British Council, 10th-20th January 2016. 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Lecture Series in India as part of 'Science and Beyond' organised by the British Council, 10th-20th January 2016 by Dr Carol Trager Cowan.
Gave talks to researchers, postgraduate and undergraduate students, teachers, trainee teachers and members of the public across India on - 'Studying structure and light emission in the scanning electron microscope&' and 'Engaging the Public with Science and Technology - from statues to rainbows'.
See for example:
https://www.britishcouncil.in/events/science-and-beyond-public-talks-carol-trager-cowan
http://www.iiserpune.ac.in/userfiles/files/Carol%20Trager-Cowan%281%29.pdf
http://www.thehindu.com/features/metroplus/bowled-over-by-science/article8123927.ece
Year(s) Of Engagement Activity 2016
URL http://www.iiserpune.ac.in/userfiles/files/Carol%20Trager-Cowan%281%29.pdf
 
Description CTC: Lecture at the Birla Industrial and Technological Museum (BITM), Kolkata, India, January 2015 'Nitrides - The Rainbow Material'. 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Schools
Results and Impact Lecture at the Birla Industrial and Technological Museum (BITM), Kolkata, India, January 2015 'Nitrides - The Rainbow Material' by Dr Carol Trager-Cowan.
Year(s) Of Engagement Activity 2016
URL http://timesofindia.indiatimes.com/city/kolkata/British-Council-brings-UK-science-speakers-to-Kolkat...
 
Description DWEA: Presentation to CIP 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach Local
Primary Audience Industry/Business
Results and Impact A co-investigator visited a major UK photonics organisation to present our new equipment capability and to discuss further collaboration.
Year(s) Of Engagement Activity 2016
 
Description ELB: EV Group pre-conference workshop (2015) 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Industry/Business
Results and Impact A member of the research group was invited to present a talk covering our work on nanostructured III-nitride materials at this industrial workshop as a result of our expertise in nanoimprint lithography. Around 30 participants were present from industry and academia throughout Europe. A conversation began at this event with a UK SME around a potential future collaboration. This was pursued following the event and the research group has been awarded an EPSRC Impact Acceleration Account grant to continue the collaboration.
Year(s) Of Engagement Activity 2015
URL http://www.waveoptics.co.uk/
 
Description ELB: Micro & Nano Engineering, The Hague, Sept. 2015 
Form Of Engagement Activity Participation in an activity, workshop or similar
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Poster presentation at this international conference.
Year(s) Of Engagement Activity 2015
URL http://mne2015.org/
 
Description ELB: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact Poster presentation outlined the latest results that we have obtained using the new equipment purchased through our EPSRC equipment grant. This generated interest at the meeting and raised awareness of the new capability.
Year(s) Of Engagement Activity 2016
URL http://www.uknc.org/
 
Description JB: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact Poster presentation outlined the latest progress that we have achieved. This results generates a new direction for using GaN semipolar opto-electronics. It is expected to draw strong attention from industry and academic areas
Year(s) Of Engagement Activity 2017
 
Description LJ: 2019 UKNC Conference, Glasgow, UK, 9-10th January 2019 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Postgraduate students
Results and Impact present latest report on developing Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN
Year(s) Of Engagement Activity 2019
 
Description LJ: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact The presentation reported out latest results on significantly improving crystal quality of our nonpolar GaN on sapphire. This generic approach can be used for a wide range of applications from photonics to electronics and also in a wide spectral region including UV devices. It is expected to draw strong attention from industry and academic areas
Year(s) Of Engagement Activity 2017
 
Description NP: 12th international conference on nitride semiconductors 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact The presentation report on design and then fabrication of single chip white LEDs. The results provided a new direction to move forward developing a new prototype white LED. It is expected to draw strong attention from industry.
Year(s) Of Engagement Activity 2017
 
Description NP: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact The presentation reported our new progress on developing a single chip with multiple colors for a white LEDs using our semi-polar GaN templates. This represents a new advantages of employing semi-polar GaN for the fabrication of a single chip devices with multiple colors for ultra-fast Li-Fi applications.
Year(s) Of Engagement Activity 2017
 
Description PAS: 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, USA, 7th-12th July 2019 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Talk title: 'Towards electrically injected UV core-shell structure'
Year(s) Of Engagement Activity 2019
 
Description PAS: Poster at 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, USA, 7th-12th July 2019 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Poster presentation on "Displacement Talbot Lithography for nano-engineering of III-nitride materials"
Year(s) Of Engagement Activity 2019
 
Description PC - Poster presentation at the Micro and Nanoscale Engineering conference (MNE2017) 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Poster presentation on the topic of "Understanding the resolution limit of Displacement Talbot Lithography." Useful discussions of the results followed.
Year(s) Of Engagement Activity 2017
URL http://mne2017.org/
 
Description PC - Poster presentation at the Micro and Nanoscale Engineering conference (MNE2018) 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Title: Nano-engineering of III-Nitride materials.
Year(s) Of Engagement Activity 2018
URL http://mne2018.org/
 
Description PC - Talk at Micro & Nano Engineering (MNE) in Copenhagen 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Title of talk: Double Displacement Talbot Lithography: a new approach to periodic nanostructure patterning
Year(s) Of Engagement Activity 2018
URL http://mne2018.org/
 
Description PC - Talk at UK Semiconductor conference, Sheffield, July 2018 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact Talk title: "Double Displacement Talbot Lithography: a new approach periodic nanostructure patterning"
Year(s) Of Engagement Activity 2018
URL https://uksemiconductors.com/?page_id=1516
 
Description PC SPIE Advanced Lithography conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Conference presentation
Year(s) Of Engagement Activity 2018
URL http://spie.org/conferences-and-exhibitions/advanced-lithography?SSO=1
 
Description PC: CMP-CDT annual conference, Sept 2019, Bristol 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach Regional
Primary Audience Postgraduate students
Results and Impact Poster on 'Nano-engineering of III-Nitride materials'
Year(s) Of Engagement Activity 2019
 
Description PC: Talk at META 2019 (July 2019), Portugal 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Talk on 'Large area fabrication of complex periodic nanostructures by 'Double Displacement Talbot Lithography': Fundamentals and applications'
Year(s) Of Engagement Activity 2019
 
Description PMC - China-UK workshop - Sheffield, UK 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Talk title: Nano-engineering of III-Nitride materials
Year(s) Of Engagement Activity 2018
 
Description PMC - Conference talk at the EMN workshop on Epitaxy on MOCVD / Epitaxy on Nanomaterials 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Conference talk on the topic of "Combining top-down etching and MOVPE regrowth: a hybrid approach to nano-engineer III-Nitrides for visible and deep-UV light-emitting devices"
Year(s) Of Engagement Activity 2017
URL http://emnmeeting.org/2018/barcelona/
 
Description PMC - International Workshop on Nitride semiconductors (IWN) 2018 - Kanazawa, Japan 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Talk title: Displacement Talbot Lithography for nano-engineering of III-Nitride materials
Year(s) Of Engagement Activity 2018
 
Description PMC - UK Nitrides Consortium (UKNC) winter conference 2018 - Manchester, UK 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact Talk title: Hybrid top-down/bottom up fabrication of regular arrays of AlN/AlGaN core-shell nanorods for deep-UV emission
Year(s) Of Engagement Activity 2018
 
Description PMC - UK Nitrides Consortium (UKNC) winter conference 2019 - Strathclyde, UK 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact Talk title: Highly-organised selective-area sublimation of GaN nanostructures for directional emission
Year(s) Of Engagement Activity 2019
 
Description PMC - conference talk at the 11th International Symposium on Semiconductor Light Emitting Devices 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Conference talk on the topic of "Hybrid top-down/bottom up fabrication of regular arrays of AlN/AlGaN core-shell nanorods for UV emission" stimulating discussion of the results.
Year(s) Of Engagement Activity 2017
URL http://www.ece.umich.edu/issled2017/
 
Description PMC poster presentation at the 12th International Conference on Nitride Semiconductors 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Poster presentation that allowed discussion of results with interested researchers. Title of poster: "Hybrid top-down/bottom up fabrication of regular arrays of AlN/AlGaN core-shell nanorods for UV emission"
Year(s) Of Engagement Activity 2017
URL https://www.european-mrs.com/meetings/archives/2017/icns-12-12th-international-conference-nitride-se...
 
Description PS - Talk at the SPIE Nanotechnology VIII conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Talk entitled "Fabrication and optical properties of InGaN/GaN nanotube for cavity based laser"
Year(s) Of Engagement Activity 2017
URL http://spie.org/conferences-and-exhibitions/past-conferences-and-exhibitions/microtechnologies-2017
 
Description PS - Talk at the SPIE Nanotechnology VIII conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Conference talk on the topic of "Displacement Talbot Lithography: an alternative technique to fabricate nanostructured metamaterials".
Year(s) Of Engagement Activity 2017
URL http://spie.org/conferences-and-exhibitions/past-conferences-and-exhibitions/microtechnologies-2017
 
Description PS - poster presentation at the 12th International Conference on Nitride Semiconductors 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Poster presentation to allow discussion of research results: Title of poster: "Design and fabrication of Gallium Nitride grating couplers using Displacement Talbot Lithography"
Year(s) Of Engagement Activity 2017
URL https://www.european-mrs.com/meetings/archives/2017/icns-12-12th-international-conference-nitride-se...
 
Description PS: Nanoscience seminar (Feb 2015) 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach Local
Primary Audience Postgraduate students
Results and Impact A seminar was given to the Department of Physics Nanoscience group covering the research and equipment covered by these awards. Questions and discussion followed.
Year(s) Of Engagement Activity 2016
URL https://wiki.bath.ac.uk/display/NAN/Nanoseminars
 
Description Paul Drude Institute visit 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Gunnar Kusch, Jochen Bruckbauer, Paul Edwards, Rob Martin to Paul Drude Institute
Year(s) Of Engagement Activity 2018
 
Description RA: UK Nitrides Consortium, Jan 2022, online 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact Talk title: Sculpturing of AlN nanostructures to realise sites for quantum dots
Year(s) Of Engagement Activity 2022
URL http://uknc2022.iopconfs.org/Programme
 
Description SJ: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Postgraduate students
Results and Impact The presentation reported out latest results on developing a new method to achieve GaN power electronics approaching its intrinsic limits. It is expected to draw strong attention from industry and academic areas
Year(s) Of Engagement Activity 2020
 
Description School visit (St Brigid's Primary, Rutherglen) 
Form Of Engagement Activity Participation in an activity, workshop or similar
Part Of Official Scheme? No
Geographic Reach Local
Primary Audience Schools
Results and Impact Spectroscope workshop as part of European Researchers' Night on the 30th September 2016.
Year(s) Of Engagement Activity 2016
 
Description TW: 2017 industrial event/open day 
Form Of Engagement Activity A formal working group, expert panel or dialogue
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact The event has attracted more than 10 CEOs from the UK industrial companies. All the new technological breakthroughs developed through the projects have been presented. It is expected that it will make major impact on industry.
Year(s) Of Engagement Activity 2017
 
Description TW: 2019 Industrial open day 
Form Of Engagement Activity A formal working group, expert panel or dialogue
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Industry/Business
Results and Impact It aims to establish new collaboration with industry and further strengthen existing collaboration with industry, and to support the UK advanced manufacturing.
Year(s) Of Engagement Activity 2019
 
Description Technical University of Berlin visit 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Gunnar Kusch, Jochen Bruckbauer, Paul Edwards, Rob Martin to Technical University Berlin in April 2018
Year(s) Of Engagement Activity 2018
 
Description XY: 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, USA, 7th-12th July 2019 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Other audiences
Results and Impact The presentation report on design and then fabrication of Semi-Polar (11-22) GaN for Green Emitters on Si Substrates. It is expected to draw strong attention from industry.
Year(s) Of Engagement Activity 2019
 
Description XY: 2019 UKNC Conference, Glasgow, UK, 9-10th January 2019 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Postgraduate students
Results and Impact Present latest report on developing semi-polar (11-22) GaN for green emitters on Si substrates
Year(s) Of Engagement Activity 2019
 
Description XZ: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Postgraduate students
Results and Impact The presentation reported out latest results on developing semi-polar InGaN-based green LEDs with super-lattice on patterned silicon. It is expected to draw strong attention from industry and academic areas
Year(s) Of Engagement Activity 2020
 
Description YC: 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, USA, 7th-12th July 2019 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Other audiences
Results and Impact The presentation reports design and then fabrication of Monolithic On-Chip Integration of HEMTs/Green LEDs. The results provided a new direction to move forward developing a new prototype optoelectronics. It is expected to draw strong attention from industry.
Year(s) Of Engagement Activity 2019
 
Description YC: 2019 UKNC Conference, Glasgow, UK, 9-10th January 2019 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Postgraduate students
Results and Impact present latest results on developing Monolithic integration of GaN HEMTs and green LEDs for Li-Fi application
Year(s) Of Engagement Activity 2019
 
Description YC: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Postgraduate students
Results and Impact The presentation reported out latest results on developing Superior performance metal-semiconductor-metal photodiode on non-polar (11-20) GaN with patterned (110) silicon. It is expected to draw strong attention from industry and academic areas
Year(s) Of Engagement Activity 2020
 
Description YNH: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact The presentation reported our latest report on the fabrication of GaN based nanoporous structures. This results can be extended to many other areas in addition to solar hydrogen generation, such as nanolasers with a DBR structure in order to enhance optical confinement factor. It is expected to draw strong attention from industry.
Year(s) Of Engagement Activity 2017
 
Description YPG: 2018 UKNC winter Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact The presentations reported a new prototype of white LEDs using our patterned non-polar GaN. It is expected that this type of white LEDs will draw attention from both industry and academia.
Year(s) Of Engagement Activity 2018
 
Description YZ: 12th international conference on nitride semiconductors 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact The presentation reported on our new progress on developing semipolar GaN on patterned substrates. This approach is generic, and can be used for a wide range of applications including LEDs and LDs and also nanodevices such as nanolasers. It is expected to draw strong attention from industry.
Year(s) Of Engagement Activity 2017