Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates

Lead Research Organisation: CARDIFF UNIVERSITY
Department Name: Sch of Engineering

Abstract

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Publications

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Benakaprasad B (2020) Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon in IEEE Transactions on Electron Devices

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Chandrasekar H (2019) Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology in IEEE Transactions on Electron Devices

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Chandrasekar H (2018) Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates in IEEE Electron Device Letters

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Eblabla A (2018) High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications in IEEE Microwave and Wireless Components Letters

 
Description The project was key platform in establishing research and industry based RF GaN on Si, this includes both passive and active on chip devices for MMIC applications. High performance RF HEMTs been realised and high Q passoves on GaN on Si substrates. The developed work is published at several IEEE journals and presented at international conferences.
Exploitation Route The outcomes of this funding been taken forward via many ways, including commercial RF GaN technology based chip set technology development in collaboration with Compound Semiconductor Centre Ltd (CSC) and research at cardiff University, other Universities partners, PhD research projects and University used developing new practicle based teaching modules.
The developed technology in this project is used by other fundings, including WEFO funding award for the "GaNforCS" project, a £1.8M funding over 3 years to develop a wafer level RF GaN technology, major EPSRC award EP/S024441/1, EP/P006973/1 and EP/P00945X/1. Further, interaction with major key industry (Leonardo, TNO, CSA Catapulte, TNO) via 4 PhD sponsored research projects.
In addition, the developed RF GaN technology in this award is now used to develop chemical and biosensor, a project funded by MRC CiC "Super-sensitive quantitation of Extracellular Vesicles in Bio-fluids, using a novel Gallium Nitride (GaN) High Electron Mobility Transistor-based biosensor" in collaboration with Cardiff University medical School.
Sectors Aerospace

Defence and Marine

Chemicals

Digital/Communication/Information Technologies (including Software)

Education

Electronics

Energy

Environment

Healthcare

Manufacturing

including Industrial Biotechology

Pharmaceuticals and Medical Biotechnology

Transport

Other

URL https://www.semiconductor-today.com/news_items/2019/dec/cardiff-091219.shtml
 
Description The technology and finding from this award were widely and effectively used. Here are key examples, establishing industry relationship with compound semiconductor UK industry and end users of compound semiconductor chipset; this was done via grant funding applications as a PI. Samples examples, Innovate UK grant proposal jointly with The Compound Semiconductor Centre (CSC) & IQE in Cardiff. WEFO funding award for the "GaNforCS" project, a £1.8M funding over 3 years to develop a wafer level RF GaN technology. the "GaNforCS" project included 11 strong industry partners in working closely developing RF GaN industry-based technology and provided substantial matched contribution The "GaNforCS" project industry partners including IQE, Leonardo, SPTS, MBDA, CSC, IconicRF, Newport Wafer Fab, CSA Catapult. The finding technology is currently used on other major EPSRC award where I am involved as Co-I, this including, EP/S024441/1, EP/P006973/1 and EP/P00945X/1. Further, in research , 4 PhD scholarship fundings was secured as result of the technology developed in this award, this includes Leonardo, TNO, CSA Catapulte, TNO. In teaching, 2 practical teaching modules I have developed, where we used the technology developed applied by the students to fabricated and test RG GaN HEMT. CPD courses based on the finding of this award were developed and provided to major compound semiconductor industry such as IQE, SPTS and Newport Wafer Fab. Some of the technology I have developed has now been used many research groups at Cardiff University. Further, the key commercial aspects of my technology have now been taken by CSC and Institute of compound semiconductor at Cardiff University, the commercial portal to our nanofabrication facility.
First Year Of Impact 2018
Sector Aerospace, Defence and Marine,Communities and Social Services/Policy,Digital/Communication/Information Technologies (including Software),Education,Electronics,Energy,Environment,Manufacturing, including Industrial Biotechology,Transport,Other
Impact Types Cultural

Economic

Policy & public services

 
Description A Feasibility Study for the Development of GaN - based High Frequency RF Devices
Amount £148,843 (GBP)
Funding ID 103440 
Organisation Innovate UK 
Sector Public
Country United Kingdom
Start 09/2017 
End 09/2018
 
Description Advancement of back-side processes for mm-wave integrated circuits
Amount £6,624,358 (GBP)
Funding ID 2433425 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 09/2020 
End 09/2024
 
Description EPSRC Centre for Doctoral Training in Compound Semiconductor Manufacturing
Amount £6,624,358 (GBP)
Funding ID EP/S024441/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 05/2019 
End 12/2027
 
Description Future Compound Semiconductor Manufacturing Hub
Amount £10,852,672 (GBP)
Funding ID EP/P006973/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 09/2016 
End 09/2024
 
Description GaN sensors, design, technology and reports
Amount £27,000 (GBP)
Funding ID GaN sensors, design, technology and reports 
Organisation University of Cambridge 
Sector Academic/University
Country United Kingdom
Start 03/2018 
End 03/2019
 
Description Non-linear (large signal) Millimetre-wave Devices, Circuits and Systems On-Wafer Characterization Facility
Amount £1,459,152 (GBP)
Funding ID EP/S01005X/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 01/2019 
End 12/2019
 
Description Short-gate GaN HEMTs for mm-wave integrated circuits
Amount £6,624,358 (GBP)
Funding ID 2429191 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 09/2020 
End 09/2024
 
Description GaNforCS 
Organisation Leonardo MW Ltd.
Country United Kingdom 
Sector Private 
PI Contribution Develop a full mask layout for MMIC based PDK
Collaborator Contribution Advising and studentship
Impact GaN on SiC MMIC Technology
Start Year 2019
 
Description GaNforCs 
Organisation Compound Semiconductor Applications Catapult
Country United Kingdom 
Sector Private 
PI Contribution advising and studentship
Collaborator Contribution advising and studentship
Impact Developing GaN technology passives for MMIC application
Start Year 2019
 
Description Microwave and Millimeter-wave GaN - Wafer to IC Workshop 
Form Of Engagement Activity A formal working group, expert panel or dialogue
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Industry/Business
Results and Impact The Centre for High Frequency Engineering at Cardiff University invites researchers and industry to attend the scheduled Microwave and Millimeter-wave GaN - Wafer to IC workshop on 25th April 2018 at Cardiff University. The aim of the workshop is to present up to date Microwave and Millimeter-wave GaN technology development and discusses its future potential in the area of 5G, space and security.
Year(s) Of Engagement Activity 2018
URL https://www.cardiff.ac.uk/events/view/microwave-and-millimeter-wave-gan-wafer-to-ic-workshop
 
Description THz Electronics for Communication and Remote Sensing Systems Workshop- 21st European Microwave Week - (EuMC/EuRAD) - 23RD - 28TH SEPTEMBER 2018, Madrid Spain 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact The frequency range from around 100 GHz to 1 THz provides opportunities for high data rate communications and high resolution imaging systems, but the so-called "THz gap" poses a range of interesting scientific and technological challenges. This half-day workshop will pull together results from several current projects in this field, highlighting recent advances and identifying some of the remaining challenges.
Year(s) Of Engagement Activity 2018
URL https://www.eumweek.com/docs/2783_eumw2018_conf_programme_FINAL.pdf