Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
Lead Research Organisation:
CARDIFF UNIVERSITY
Department Name: Sch of Engineering
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
Publications
Varghese A
(2022)
GaN-HEMT on Si as a Robust Visible-Blind UV Detector With High Responsivity
in IEEE Sensors Journal
Varghese A
(2021)
Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit
in IEEE Sensors Journal
Description | The project was key platform in establishing research and industry based RF GaN on Si, this includes both passive and active on chip devices for MMIC applications. High performance RF HEMTs been realised and high Q passoves on GaN on Si substrates. The developed work is published at several IEEE journals and presented at international conferences. |
Exploitation Route | The outcomes of this funding been taken forward via many ways, including commercial RF GaN technology based chip set technology development in collaboration with Compound Semiconductor Centre Ltd (CSC) and research at cardiff University, other Universities partners, PhD research projects and University used developing new practicle based teaching modules. The developed technology in this project is used by other fundings, including WEFO funding award for the "GaNforCS" project, a £1.8M funding over 3 years to develop a wafer level RF GaN technology, major EPSRC award EP/S024441/1, EP/P006973/1 and EP/P00945X/1. Further, interaction with major key industry (Leonardo, TNO, CSA Catapulte, TNO) via 4 PhD sponsored research projects. In addition, the developed RF GaN technology in this award is now used to develop chemical and biosensor, a project funded by MRC CiC "Super-sensitive quantitation of Extracellular Vesicles in Bio-fluids, using a novel Gallium Nitride (GaN) High Electron Mobility Transistor-based biosensor" in collaboration with Cardiff University medical School. |
Sectors | Aerospace Defence and Marine Chemicals Digital/Communication/Information Technologies (including Software) Education Electronics Energy Environment Healthcare Manufacturing including Industrial Biotechology Pharmaceuticals and Medical Biotechnology Transport Other |
URL | https://www.semiconductor-today.com/news_items/2019/dec/cardiff-091219.shtml |
Description | The technology and finding from this award were widely and effectively used. Here are key examples, establishing industry relationship with compound semiconductor UK industry and end users of compound semiconductor chipset; this was done via grant funding applications as a PI. Samples examples, Innovate UK grant proposal jointly with The Compound Semiconductor Centre (CSC) & IQE in Cardiff. WEFO funding award for the "GaNforCS" project, a £1.8M funding over 3 years to develop a wafer level RF GaN technology. the "GaNforCS" project included 11 strong industry partners in working closely developing RF GaN industry-based technology and provided substantial matched contribution The "GaNforCS" project industry partners including IQE, Leonardo, SPTS, MBDA, CSC, IconicRF, Newport Wafer Fab, CSA Catapult. The finding technology is currently used on other major EPSRC award where I am involved as Co-I, this including, EP/S024441/1, EP/P006973/1 and EP/P00945X/1. Further, in research , 4 PhD scholarship fundings was secured as result of the technology developed in this award, this includes Leonardo, TNO, CSA Catapulte, TNO. In teaching, 2 practical teaching modules I have developed, where we used the technology developed applied by the students to fabricated and test RG GaN HEMT. CPD courses based on the finding of this award were developed and provided to major compound semiconductor industry such as IQE, SPTS and Newport Wafer Fab. Some of the technology I have developed has now been used many research groups at Cardiff University. Further, the key commercial aspects of my technology have now been taken by CSC and Institute of compound semiconductor at Cardiff University, the commercial portal to our nanofabrication facility. |
First Year Of Impact | 2018 |
Sector | Aerospace, Defence and Marine,Communities and Social Services/Policy,Digital/Communication/Information Technologies (including Software),Education,Electronics,Energy,Environment,Manufacturing, including Industrial Biotechology,Transport,Other |
Impact Types | Cultural Economic Policy & public services |
Description | A Feasibility Study for the Development of GaN - based High Frequency RF Devices |
Amount | £148,843 (GBP) |
Funding ID | 103440 |
Organisation | Innovate UK |
Sector | Public |
Country | United Kingdom |
Start | 09/2017 |
End | 09/2018 |
Description | Advancement of back-side processes for mm-wave integrated circuits |
Amount | £6,624,358 (GBP) |
Funding ID | 2433425 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 09/2020 |
End | 09/2024 |
Description | EPSRC Centre for Doctoral Training in Compound Semiconductor Manufacturing |
Amount | £6,624,358 (GBP) |
Funding ID | EP/S024441/1 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 05/2019 |
End | 12/2027 |
Description | Future Compound Semiconductor Manufacturing Hub |
Amount | £10,852,672 (GBP) |
Funding ID | EP/P006973/1 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 09/2016 |
End | 09/2024 |
Description | GaN sensors, design, technology and reports |
Amount | £27,000 (GBP) |
Funding ID | GaN sensors, design, technology and reports |
Organisation | University of Cambridge |
Sector | Academic/University |
Country | United Kingdom |
Start | 03/2018 |
End | 03/2019 |
Description | Non-linear (large signal) Millimetre-wave Devices, Circuits and Systems On-Wafer Characterization Facility |
Amount | £1,459,152 (GBP) |
Funding ID | EP/S01005X/1 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 01/2019 |
End | 12/2019 |
Description | Short-gate GaN HEMTs for mm-wave integrated circuits |
Amount | £6,624,358 (GBP) |
Funding ID | 2429191 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 09/2020 |
End | 09/2024 |
Description | GaNforCS |
Organisation | Leonardo MW Ltd. |
Country | United Kingdom |
Sector | Private |
PI Contribution | Develop a full mask layout for MMIC based PDK |
Collaborator Contribution | Advising and studentship |
Impact | GaN on SiC MMIC Technology |
Start Year | 2019 |
Description | GaNforCs |
Organisation | Compound Semiconductor Applications Catapult |
Country | United Kingdom |
Sector | Private |
PI Contribution | advising and studentship |
Collaborator Contribution | advising and studentship |
Impact | Developing GaN technology passives for MMIC application |
Start Year | 2019 |
Description | Microwave and Millimeter-wave GaN - Wafer to IC Workshop |
Form Of Engagement Activity | A formal working group, expert panel or dialogue |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Industry/Business |
Results and Impact | The Centre for High Frequency Engineering at Cardiff University invites researchers and industry to attend the scheduled Microwave and Millimeter-wave GaN - Wafer to IC workshop on 25th April 2018 at Cardiff University. The aim of the workshop is to present up to date Microwave and Millimeter-wave GaN technology development and discusses its future potential in the area of 5G, space and security. |
Year(s) Of Engagement Activity | 2018 |
URL | https://www.cardiff.ac.uk/events/view/microwave-and-millimeter-wave-gan-wafer-to-ic-workshop |
Description | THz Electronics for Communication and Remote Sensing Systems Workshop- 21st European Microwave Week - (EuMC/EuRAD) - 23RD - 28TH SEPTEMBER 2018, Madrid Spain |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | The frequency range from around 100 GHz to 1 THz provides opportunities for high data rate communications and high resolution imaging systems, but the so-called "THz gap" poses a range of interesting scientific and technological challenges. This half-day workshop will pull together results from several current projects in this field, highlighting recent advances and identifying some of the remaining challenges. |
Year(s) Of Engagement Activity | 2018 |
URL | https://www.eumweek.com/docs/2783_eumw2018_conf_programme_FINAL.pdf |