Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
Lead Research Organisation:
UNIVERSITY OF CAMBRIDGE
Department Name: Materials Science & Metallurgy
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
Organisations
Publications
Chen C
(2023)
Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide.
in Ultramicroscopy
Chen C
(2024)
Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy
in Applied Physics Letters
Cheng X
(2023)
Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers.
in ACS photonics
Choi F
(2018)
Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
in Journal of Applied Physics
Church S
(2017)
Photoluminescence studies of cubic GaN epilayers
in physica status solidi (b)
Ghosh S
(2021)
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon.
in ACS applied electronic materials
| Description | The work on the growth of nitride high electron mobility transistors on silicon during this award has greatly enhanced our understanding of the mechanisms controlling strain in such devices. This will help us, in future, to develop growth methods which allow the wafer to remain flat (which is important for wafer processing) whilst growing thick layers which tend to introduce strain into the system and bow it into a non-flat shape. We have also increased understanding of the mechanisms which control the film and the substrate conductivity post-growth, which is vital to aid understanding of the device electrical performance. |
| Exploitation Route | The robust growth methods we are developing may be adopted by our industrial partners for commercial devices. Materials grown by these methods are also broadly available to the UK community via the EPSRC National Epitaxy Facility. |
| Sectors | Digital/Communication/Information Technologies (including Software) Electronics |
| Description | DCMS: Compound Semiconductors: Industry & Academia Roundtable |
| Geographic Reach | National |
| Policy Influence Type | Participation in a guidance/advisory committee |
| Description | EPSRC-Innovate UK Semiconductor Technology Roundtable |
| Geographic Reach | National |
| Policy Influence Type | Participation in a guidance/advisory committee |
| Description | EPSRC/Innovate UK Semiconductor Roundtable |
| Geographic Reach | National |
| Policy Influence Type | Contribution to a national consultation/review |
| Description | FCDO UK Semiconductor Sector Visit to Washington DC |
| Geographic Reach | Multiple continents/international |
| Policy Influence Type | Contribution to a national consultation/review |
| Description | FCDO/DSIT Semiconductor Delegation to Washington |
| Geographic Reach | Multiple continents/international |
| Policy Influence Type | Contribution to a national consultation/review |
| Description | Institute of Physics / Royal Academy of Engineering Roundtable: UK Semiconductor Challenges and Solutions |
| Geographic Reach | National |
| Policy Influence Type | Contribution to a national consultation/review |
| URL | https://raeng.org.uk/media/2hmbvzke/0402_semi-conductor-report_v2.pdf |
| Description | RAEng - Quantum Infrastructure Review - Working Group |
| Geographic Reach | National |
| Policy Influence Type | Contribution to a national consultation/review |
| Description | Royal Academy of Engineering: Exploring the UK semiconductor innovation system workshop |
| Geographic Reach | National |
| Policy Influence Type | Contribution to a national consultation/review |
| URL | https://raeng.org.uk/media/rm1hck2o/raeng-exploring-the-uk-semiconductor-innovation-system.pdf |
| Description | eFutures DSIT Semiconductors Project Advisory Group |
| Geographic Reach | National |
| Policy Influence Type | Contribution to a national consultation/review |
| Description | A National Research Facility for Epitaxy |
| Amount | £12,250,478 (GBP) |
| Funding ID | EP/X015300/1 |
| Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
| Sector | Public |
| Country | United Kingdom |
| Start | 05/2022 |
| End | 06/2027 |
| Title | Research data supporting "Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold" |
| Description | Data corresponding to the figures 1, 2, 4, and 5 in the corresponding manuscript. |
| Type Of Material | Database/Collection of data |
| Year Produced | 2016 |
| Provided To Others? | Yes |
| URL | https://www.repository.cam.ac.uk/handle/1810/260851 |
| Title | Research data supporting "Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: a practical guide" |
| Description | The dataset includes data for the associated article, encompassing the scanning capacitance microscopy (SCM), scanning capacitance spectroscopy (SCS), and mercury CV data related to the GaN-based high electron mobility transistor (HEMT) structures. The SCM and SCS data were acquired using a Bruker Dimension Icon Pro AFM coupled with a Bruker SCM module, saved as '.spm' files viewable with Bruker's NanoScope Analysis software. The mercury CV data was obtained using a mercury probe capacitance-voltage measurement system from Materials Development Corporation, stored as a text file importable to data analysis software like Origin. |
| Type Of Material | Database/Collection of data |
| Year Produced | 2023 |
| Provided To Others? | Yes |
| URL | https://www.repository.cam.ac.uk/handle/1810/355790 |
| Description | Royal Academy of Engineering Critical Conversation |
| Form Of Engagement Activity | A formal working group, expert panel or dialogue |
| Part Of Official Scheme? | No |
| Geographic Reach | National |
| Primary Audience | Public/other audiences |
| Results and Impact | In March 2023, semiconductors were listed as the one of 'five technologies that are most critical to the UK' in the government's UK Science and Technology Framework. This online discussion event, hosted by the CEO of the Royal Acdemy of Engineering, explored the latest challenges, and opportunities, with engineers at the forefront of semiconductor research and industry, including Rachel Oliver. A live audience of over 100 watched and it has since been viewed about 300 times on Youtube. As a result of t6his engagement, Rachel was asked to join the eFutures DSIT Semiconductors Project Advisory Group. |
| Year(s) Of Engagement Activity | 2023 |
| URL | https://raeng.org.uk/events/2023/september/semiconductors-a-critical-technology-for-a-critical-time |
| Description | The Context - interview |
| Form Of Engagement Activity | A press release, press conference or response to a media enquiry/interview |
| Part Of Official Scheme? | No |
| Geographic Reach | National |
| Primary Audience | Public/other audiences |
| Results and Impact | I was interviewed on "The Context" on the BBC News Channel about the UK Semiconductor Strategy shortly after its publication. |
| Year(s) Of Engagement Activity | 2023 |