Manufacturing scalable semiconductor quantum light sources

Lead Research Organisation: Cardiff University
Department Name: Sch of Engineering

Abstract

Semiconductors have already revolutionised the world around us through the inventions of the transistor, diode lasers, integrated circuits and sensors. A new wave of semiconductor quantum technologies are finding commercial applications in ultra-secure communications, enhanced imaging, sensing, and possibly even computing and simulations. In all these cases the "quantum advantage" is theoretically proven and experimentally demonstrated, but there is a strong need for a scalable, practical and efficient source of quantum light.

Naturally occurring point-like light sources called "colour centres" act as quantum light sources in wide bandgap semiconductors such as diamond, Silicon Carbide, Boron Nitride and Gallium Nitride (GaN) at room temperature. Commercially, GaN now dominates the market for solid state lighting, because it is an efficient and manufacturable material, leading to costs of less than one dollar per LED. However, Gallium-Nitride is also a promising material for quantum light sources as the colour centres within it emit from the ultra-violet to the near infra-red. This wide range means the emission overlaps with minima in the absorption curves of optical fibres (1310 and 1550 nm), transitions in the best atomic quantum memories (near 800nm) and low loss free-space communications in the blue. Furthermore, by engineering heterostructures within the semiconductor it is possible to electrically drive the emitter, rapidly switch the device and design efficiency-enhancing structures.

This fellowship will apply manufacturing techniques widespread in the compound semiconductor manufacturing field, such as large area epitaxy and wafer scale processing, to deliver a bright and room temperature quantum light-emitting diode based on GaN. I will use laser lithography, standardised packaging and quality control to ensure the end device is produced in a manner that enables scale up to mass-production, with the full supply chain within the UK. Collaboration with the UK semiconductor industry for growth and packaging of devices, and use of processing facilities installed at Cardiff University, will foster two-way knowledge exchange between industry and academia. My experience of this type of collaboration at Imperial-Agilent and at Toshiba-Cambridge, makes me uniquely well-qualified to manage this interaction. By funding me to devote a significant amount of my time to research for the next 5 years this project will deliver high impact research and build a platform for future UK prosperity and technological know-how.

Planned Impact

ECONOMIC IMPACT

This proposal will support the UK economy by generating intellectual property, know-how and a low cost, practical quantum-LED prototype. By keeping the quantum-LED fully integrated into the UK's supply chain I will deliver a device ready to be incorporated in commercial systems. An Advisory Panel of experts will advise me throughout, ensuring the project addresses the challenges of manufacturing, packaging and testing. This will generate spin-off benefits to conventional GaN-LED manufacturing, creating wealth in the UK.

The impact of the research will be maximised through protection of intellectual property, if appropriate. Previously I have worked on 15 patent families, and so am attuned of the requirements to protect valuable ideas at an early stage. Project partners TREL and idQuantique are the UK's leading companies in optical quantum technology, and offer a route to commercialisation (see Letters of Support).

SOCIETAL IMPACT

I will develop an enabling technology for applications in quantum communications, imaging and sensing. Quantum technologies have the potential to transform the UK with quantum key distribution offering personal communications secured by the laws of physics and quantum imaging offering unprecedented functionalities for autonomous cars' LIDAR.

I will use my membership of the consortium running the second phase of the UK National Quantum Computing and Simulation Hub to keep up to date with the most challenging application areas. I will also show system-ready devices at the UK National Quantum Technology Showcase, held annually in London, seeking collaborators and end-users.

Through the School of Engineering Public Engagement Office I will arrange to present in front of the Welsh Assembly STEM working group on QT and at the "Science in the Senedd" events, where Assembly Members, journalists and the public are present. I will undertake communications training prior to these events to ensure I maximise impact.

IMPACT IN KNOWLEDGE TRANSFER

This fellowship will enable me to transfer my knowledge and expertise by training PhDs and Postdocs to have the skills suitable for employment in research and development, further supporting an area of the UK economy facing an acute skills shortage. Trained experts are essential to maintain and grow the UK's engineering base and foster a strong, resilient and healthy nation.

The project is located in South Wales, where numerous initiatives in the field of Compound Semiconductors (CSs) are coordinated under the umbrella organisation "CS Connected". In particular, the CS Centre Ltd. will be used to grow the material used in this project. The CS Applications Catapult will package devices into robust, standardised housings that are essential for future incorporation into systems. Processing will occur in the University's Institute for CSs (ICS) cleanroom, which has a wafer scale processing line for GaN LEDs. Thus, the possibility of scaling up production of devices exists within a half hour journey from Cardiff. This cluster of expertise in the local area makes the project well placed to link into other initiatives in CSs. To push this I will showcase the project at regular events organised by partners of CS Connected, such as the annual Co-Innovate conferences organised by IQE plc.

PUBLIC ENGAGEMENT

Quantum Technology is an area that generates considerable public interest, and this work will be promoted with social media (@BennettLabCardiff), group webpage, press releases, topical reviews in general interest science/engineering magazines and through engagement with science journalists. I will also develop a show on the science of mobile phones with Cardiff social enterprise Science-made-Simple for use in secondary schools and science fairs. This will introduce students to the concepts of coloured LEDs, radiation and crystals through a technology they are excited about.
 
Description Work in ongoing, so it is early to fully judge the extent of the findings. However, we have learnt much about the physical properties of the emitters under study and have made a number of publications (see attached list). 3 more papers are in review, and 4 are in preparation, so there will be more to report next year. A key finding from the last year has been around strategies to increase the brightness of the sources using a solid immersion lens, which has led to record-breaking photon rates from a room temperature source approaching 1MHz. This work was published in Applied Physics Letter and New Journal of Physics in 2022.
Exploitation Route We currently have active collaborations with Glasgow on this topic, and a joint grant in review.
Sectors Digital/Communication/Information Technologies (including Software)

 
Description Our work has underpinned the Generation tech project we undertook with local not-for profit to develop a workshop for schools. This has been delivered to ~ 20 schools by myself and others.
First Year Of Impact 2022
Sector Education
Impact Types Societal

 
Description Training on Laser Fabrication and Ion Implantation of Defects as Quantum Emitters
Amount € 3,281,943 (EUR)
Funding ID 956387 
Organisation European Commission H2020 
Sector Public
Country Belgium
Start 10/2020 
End 10/2024
 
Title Bullseye dielectric cavities for photon collection from a surface-mounted point source 
Description These data represent the paper's numerical results with the dataset's title. This dataset contains 21 *.xlsx files in which each file name belongs to the figure's subplots.  Figure 1b > Collection efficiency & Purcell factor vs. Wavelength Figure 2a > Purcell factor vs. Wavelength vs. Central disk diameter Figure 2b > Purcell factor vs. Wavelength vs. Duty cycle Figure 2c > Collection efficiency vs. Wavelength vs. Central disk diameter Figure 2d > Collection efficiency vs. Wavelength vs. Duty cycle Figure 3a > Collection efficiency & Purcell factor vs. polar angle (1nm above and middle of the disk) Figure 3b > Purcell factor vs. X & Y displacement Figure 3c > Collection efficiency vs. X & Y displacement Figure 3d > Collection efficiency & Purcell factor vs. Z displacement Figure 4a > Excitation enhancement vs. Number of rings (532nm and emission wavelength) (1nm above and middle of the disk) Figure 4b > Radiative decay rate enhancement vs. Number of rings Figure 4c > Collection efficiency enhancement vs. Number of rings Figure 4d > Effective enhancement vs. Number of rings (532nm and emission wavelength) (1nm above and middle of the disk) Figure 5a > Collection efficiency vs. Duty cycle vs. Ring period (1st ring) Figure 5b > Purcell factor vs. Duty cycle vs. Ring period (1st ring) Figure 5c > Collection efficiency vs. Duty cycle vs. Ring period (2nd ring) Figure 5d > Purcell factor vs. Duty cycle vs. Ring period (2nd ring) Figure 5e > Collection efficiency vs. Duty cycle vs. Ring period (2nd ring) Figure 5e > Purcell factor vs. Duty cycle vs. Ring period (2nd ring) Figure 6c > Collection efficiency vs. Number of rings (with and without apodization) Figure 6d > Purcell factor vs. Number of rings (with and without apodization) 
Type Of Material Database/Collection of data 
Year Produced 2022 
Provided To Others? Yes  
Impact In this work, we present the design of free space couplers for suspended triangular nano-beam WGs. We investigate three different designs which demonstrate grating coupler, Bragg reflector, and total internal reflection elements, using the suspended triangular WG geometry. The optimised device designs demonstrate simulated coupling efficiencies approaching 50% for light focussed from a high numerical aperture objective. Verification of the performance of physical devices may be achieved through transmission measurements of WG devices with couplers at either end. This will be performed on devices fabricated in gallium nitride using angled Faraday cage-assisted etching and will form the basis of a future work. The development of such couplers will enable fast and efficient testing of closely spaced integrated circuit components. 
URL https://research.cardiff.ac.uk/converis/portal/detail/Dataset/218102868?auxfun=&lang=en_GB
 
Title Design of free-space couplers for suspended triangular nano-beam waveguides 
Description These data are from a study involving the design and modelling of free-space couplers for suspended triangular nano-beam waveguides. We use Finite Element Analysis (FEA) using Ansys Lumerical Mode, and Finite-Difference Time-Domain (FDTD) modelling using Ansys Lumerical FDTD to benchmark and optimise the performance of three types of designs: Type A - Grating coupler with mode converter, Type B - Wedge mirror with Bragg reflector, Type C - Wedge mirror with mode converter. The dataset includes 20 .CSV files with the raw data for each figure in the manuscript. The filename of the files points towards each labelled subplot in each figure. Figure 2. Effective Index of triangular nano-beam waveguides fig2_a.csv - Effective index of first 4 waveguide modes as function of waveguide width, for 1550 nm wavelength light. fig2_b.csv - 2D array of normalised field intensity data for the first TE waveguide mode with top width of 765 nm. The X and Y axis are in stored in the first column and row respectively. fig2_c.csv - 2D array of normalised field intensity data for the first TM waveguide mode with top width of 765 nm. The X and Y axis are in stored in the first column and row respectively. Figure 3. Type A coupler design. fig3_c_2DCouplingEfficiency.csv - 2D array of calculated coupling efficiency for Type A coupler of a Gaussian source focused from above into the TE-like waveguide mode as function of duty cycle and grating pitch for a grating coupler with w1 = 2000 nm and w2 = 400 nm. The X and Y axis are in stored in the first column and row respectively. fig3_c_PhaseMatching.csv - Estimated pitch satisfying the 1st and 2nd order vertical grating (VG) and Bragg reflector (BR) phase matching conditions, as a function of duty cycle (DC). fig3_d.csv - 2D array of normalised field intensity data for side view cross section field intensity distribution for Type A coupler with light input from the top with TE-like polarisation. The X and Y axis are in stored in the first column and row respectively. fig3_e.csv - 2D array of normalised field intensity data for side view cross section field intensity distribution for Type A coupler with light input through the waveguide. The X and Y axis are in stored in the first column and row respectively. fig3_f_r_theta_Intensity.csv - Normalised field intensity data for far field projection of Type A coupler with light input through the waveguide, as a function of r and theta. fig3_g.csv - Simulated coupling efficiency as a function of wavelength for light input from the (labelled "Top") and through the waveguide (labelled "WG") in TE and TM-like polarisations. Type A coupler final design specification: Grating Periods: 5 Grating Pitch: 1.2422 um Grating Duty Cycle: 0.375 Grating Width1: 2 um Grating Width2: 0.4 um Mode Converter Length: 7.5 um Mode Converter Width1: 0.765 um Mode Converter Width2: 2 um Figure 4. Type B coupler design. fig4_c_2DCouplingEfficiency.csv - 2D array of calculated coupling efficiency for Type B coupler of a Gaussian source focused from above into the TE-like waveguide mode as function of duty cycle and grating pitch for a grating coupler with w1 = 4000 nm and w2 = 400 nm. The X and Y axis are in stored in the first column and row respectively. fig4_c_PhaseMatching.csv - Estimated pitch satisfying the 1st and 2nd order vertical grating (VG) and Bragg reflector (BR) phase matching conditions, as a function of duty cycle (DC). fig4_d.csv - 2D array of normalised field intensity data for side view cross section field intensity distribution for Type B coupler with light input from the top with TE-like polarisation. The X and Y axis are in stored in the first column and row respectively. fig4_e.csv - 2D array of normalised field intensity data for side view cross section field intensity distribution for Type B coupler with light input through the waveguide. The X and Y axis are in stored in the first column and row respectively. fig4_f_r_theta_Intensity.csv - Normalised field intensity data for far field projection of Type B coupler with light input through the waveguide, as a function of r and theta. fig4_g.csv - Simulated coupling efficiency as a function of wavelength for light input from the (labelled "Top") and through the waveguide (labelled "WG") in TE and TM-like polarisations. Type B coupler final design specification: Grating Periods: 5 Grating Pitch: 0.399054 um Grating Duty Cycle: 0.661334 Grating Width1: 3 um Grating Width2: 0.4 um Mode Converter Length: 2.22046 um Mode Converter Width1: 0.765 um Mode Converter Width2: 3 um Figure 5. Type C coupler design. fig5_c_2DCouplingEfficiency.csv - 2D array of calculated coupling efficiency for Type C coupler of a Gaussian source focused from above into the TE-like waveguide mode as function of mode converter length, and wedge mirror width. The X and Y axis are in stored in the first column and row respectively. fig5_d.csv - 2D array of normalised field intensity data for side view cross section field intensity distribution for Type C coupler with light input from the top with TE-like polarisation. The X and Y axis are in stored in the first column and row respectively. fig5_e.csv - 2D array of normalised field intensity data for side view cross section field intensity distribution for Type C coupler with light input through the waveguide. The X and Y axis are in stored in the first column and row respectively. fig5_f_r_theta_Intensity.csv - Normalised field intensity data for far field projection of Type C coupler with light input through the waveguide, as a function of r and theta. fig5_g.csv - Simulated coupling efficiency as a function of wavelength for light input from the (labelled "Top") and through the waveguide (labelled "WG") in TE and TM-like polarisations. Type C coupler final design specification: Mode Converter Length: 3.7626 um Mode Converter Width1: 1.77528 um Mode Converter Width2: 3 um Wedge Mirror Length: 2.85 um Wedge Mirror Width1: 3.07064 um Wedge Mirror Width2: 0.4 um Research results based upon these data are published at http://doi.org/10.1088/1361-6463/ac941e 
Type Of Material Database/Collection of data 
Year Produced 2022 
Provided To Others? Yes  
Impact In this work, we present the design of free space couplers for suspended triangular nano-beam WGs. We investigate three different designs which demonstrate grating coupler, Bragg reflector, and total internal reflection elements, using the suspended triangular WG geometry. The optimised device designs demonstrate simulated coupling efficiencies approaching 50% for light focussed from a high numerical aperture objective. Verification of the performance of physical devices may be achieved through transmission measurements of WG devices with couplers at either end. This will be performed on devices fabricated in gallium nitride using angled Faraday cage-assisted etching and will form the basis of a future work. The development of such couplers will enable fast and efficient testing of closely spaced integrated circuit components. 
URL https://research.cardiff.ac.uk/converis/portal/detail/Dataset/214949311?auxfun=&lang=en_GB
 
Title Faraday-cage-assisted etching of suspended gallium nitride nanostructures 
Description 1. (a) Schematic of the cross section of the etch chamber containing the Faraday cage, with the GaN samples at its center, (b) schematic showing how ions directed at steep angles ? cause the characteristic undercut profile, (c) the plot of the predicted etch angles ? and ?, (d) a photograph of the triangular Faraday cage with a UK ten-pence coin for scale (diameter 24.5 mm), and (e) a scanning electron micrograph of a cleaved edge of a GaN waveguide sample etched in the cage to a depth 2d = 1.56 µm. 2. (a) Stripe etched without the cage, showing an etch angle of -15?, typical of ICP etched GaN, (b) an etch with the sample in a 45? cage and with the same 1:1 Cl2:Ar gas mix, leading to a -22? etch, and (c) an etch in a 45? cage with a 5:1 Cl2:Ar mix to give a ? = 0? etch profile. 3. (a) Free-standing singly clamped triangular cantilever 1 µm in width and 35 µm in length, suspended 2 µm above a planar layer, etched inside a Faraday cage with an equilateral triangular cross section and (b) a suspended doubly-clamped cantilever of 2 µm width. 4. Calculations of waveguides with an equilateral triangular cross-section: (a) the effective index of the waveguide modes (blue: TE and red: TM) as a function of the waveguide size (inset: the schematic of the calculation) and [(b) and (c)] the mode profiles for (b) the fundamental transverse electric mode and (c) the transverse magnetic mode. Addition profiles provide further information on the electric field. Numerical values for construction of Figure 4(a) are provided. Research results based upon these data are published at https://doi.org/10.1063/5.0007947 
Type Of Material Database/Collection of data 
Year Produced 2020 
Provided To Others? Yes  
Impact In conclusion, we have presented a Faraday cage-assisted process to etch GaN with a controlled angle of undercut. We have shown that by adjusting the gas mix in the ICP chamber, it is possible to vary the etch angle without changing the cage design. We have created suspended GaN nano-cantilevers with a triangular cross section. Simulations show that these can support single optical modes in the near infrared, with potential for integrated photonics that exploits the advantageous optical properties of GaN. Future work may focus on the creation of 1D photonic crystals in suspended GaN devices. It is also possible to consider alternative designs of the Faraday cage, such as conical cages, to create undercut devices with a cylindrical symmetry. 
URL https://research.cardiff.ac.uk/converis/portal/detail/Dataset/108194561?auxfun=&lang=en_GB
 
Title Room-temperature Quantum Emitter in Aluminum Nitride 
Description A novel quantum light source is characterised within our work with laser scanning microscopy including; confocal scan maps, raman spectroscopy, photon counting time resolved, photon counting second order correlation, spectrally resolved, polarisation resolved, temperature resolved and excitation power dependent measurements. The data is available as a Microsoft Excel spreadsheet (.xlsx). Confocal scan maps are presented as a 2D matrix, where the first column and first row represent the X and Y axis respectively. Spectral measurements are presented in a two column format for photon energy (eV) and arbitrary intensity (a.u.). Second order correlation measurements (g^(2)) are presented in two columns as time (ns) and normalised g^(2). A histogram representing a statistical analysis of emitter energies (which represents the energy at which the spectrum for each emitter has reached half its maximum intensity on the higher energy side) is given in two columns, where the first column is the HM value (eV) for emitters with an obvious zero-phonon line (ZPL) and the second column is the HM (eV) for emitters without an obvious ZPL. Raman data is given in two colums with the wavenumber (cm^-1) against arbitrary intensity (a.u.). Time resolved photon counting data is also presented in two columns, where the first column is either time [s] or X/Y position [um] and the second column is photon counts (counts s^-1). Power dependent data is given in 4 columns, where the first column is the excitation power (uW) and the further three columns are the intensity (counts s^-1) of the emitter, the substrate background and the corrected (emitter minus substrate background) intensity. Polarisation data is presented in one sheet, in 4 coumns. The first and third column is the polarisation rotation for the excitation and collection (degree) respectively. The corresponding photon-counting intensity (a.u.) is given in column 2 and 4 for the excitation and collection respectively. Temperature dependent data is presented in three columns, with the temperature (k), the zero-phonon line energy (eV) and the full width half maximum of the ZPL (meV) in column one, two and three respectively. Research results based upon these data are published at https://doi.org/10.1021/acsphotonics.0c00528 
Type Of Material Database/Collection of data 
Year Produced 2020 
Provided To Others? Yes  
Impact Quantum emission from the sample is attributed to point-like defects embedded deep within the band gap of AlN. The below band gap excitation used here suggests that the defect states are directly being excited. The nature of the emitters is unknown, but several theoretical studies have predicted and studied spin-dependent defects in AlN. (17-20) Secondary ion mass spectrometry (SIMS) measurements from the manufacturer (Dowa Electronics Materials Co.) show trace levels of hydrogen, carbon, oxygen, and silicon in the sample. In the future, controlled introduction of other impurities via direct growth or implantation may enable us to engineer desirable spin systems in AlN. Control of the spin states may be possible via the piezoelectric effect, similar to what has been achieved in emitters in SiC (10) or through resonant optical fields. The cross-polarized maxima in emission and absorption dipoles presents an ideal arrangement for efficient polarization filtered resonant control, which conventionally limits the efficiency to 50% due to the perpendicular excitation and detection optics required to isolate the laser. (25) Owing to significant existing investment in AlN transducers and sensors this material may be able to compete with diamond and SiC as a viable platform for quantum technologies if it can be shown to host spin-dependent emission from the color centers: in these other materials optical manipulation and read-out of color center spin states (9,26) has enabled sensitive nanoscale sensing (27,28) and promising room-temperature qubits. 
URL http://doi.org/10.17035/d.2020.0110094158
 
Description Collaboration with Dr Luca Sapienza 
Organisation University of Glasgow
Country United Kingdom 
Sector Academic/University 
PI Contribution Samples exchanged, joint grant submission to EPSRC.
Collaborator Contribution Online discussions have led to an idea to pattern metallic nanorings above emitters in our samples. We prepared a sample and sent it to Glasgow Uni. On the back of this a joint EPSRC grant proposal was submitted in Nov 2022.
Impact Grant proposal
Start Year 2022
 
Description Generation Tech 
Form Of Engagement Activity Participation in an activity, workshop or similar
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Schools
Results and Impact Generation Tech is an Outreach project in which I will work with local educational organisation Science-Made-Simple to develop a workshop for schools to educate pupils about everyday uses of semiconductors, for instance in mobile phones. It will be piloted in Welsh schools, but thereafter rolled out nationally. Funded with £23K from Higher Education Funding Council for Wales. Delivered by PI and others in approx 20 schools in late 2022 to the present day, on-going. Some staff costs charged to the Fellowship in early 2023 to support delivery.
Year(s) Of Engagement Activity 2022