Displacement Talbot Lithography: accelerating a versatile and low-cost patterning technique for precision manufacturing
Lead Research Organisation:
UNIVERSITY OF BATH
Department Name: Electronic and Electrical Engineering
Abstract
Over the past 50 years, society has benefitted from electronic devices getting smaller and smaller. The challenge of making such small devices has meant that the processes have increased dramatically in cost, to the extent that the latest 'printer' of very small features costs up to $100M. Only a small number of high-volume products can sustain such a cost. Nevertheless, new physics can occur, and materials can have novel properties at the smallest scales - the nanoscale. So, for society to use these more widely, we need to develop cheaper ways of making small materials and devices. Otherwise, they are unviable, and research into the opportunities that they provide will be limited.
This proposal is about extending a recently developed technique called Displacement Talbot Lithography that uses the interference of light to make very small patterns. We will then combine it with other processes, such as atomic layer deposition that allows materials to be controllably coated with individual layers of atoms, to further decrease the pattern size. The technique is exciting because it combines low-cost with high yield and can be scaled relatively easily to large areas, to further increase manufacturability; important for them to be produced at the scale to be used in society at large. Being a new technique, its potential is still relatively unknown.
We will then apply the patterning technique to the manufacture of advanced materials that can combine conventional electronics based on silicon with optical communications. Whilst silicon is a mature material for making electronics, it manages light poorly. By growing crystals of good optical materials such as indium phosphide directly on silicon we will combine the optimum properties of both materials to make an engineered super-material. But this can only be done cost-effectively by using the very fine patterning that is possible with Displacement Talbot Lithography.
To achieve these goals, the University of Bath and Cardiff University are combining their expertise and working together. Researchers at Bath are experts in large area nanofabrication whilst those at Cardiff are experts in growing group III-V semiconductor crystals for use in optical communications. We will also be partnering with UK manufacturing industry who have the interest and ability to exploit the results and have the wider industry connections to pass on the benefits up the supply chain: Newport Wafer Fab is an advanced semiconductor processing facility that currently boasts International Rectifier, Motorola, Samsung, STM as its clients, whilst PragmatIC Semiconductor is a world leader in ultra-low-cost flexible electronics.
This proposal is about extending a recently developed technique called Displacement Talbot Lithography that uses the interference of light to make very small patterns. We will then combine it with other processes, such as atomic layer deposition that allows materials to be controllably coated with individual layers of atoms, to further decrease the pattern size. The technique is exciting because it combines low-cost with high yield and can be scaled relatively easily to large areas, to further increase manufacturability; important for them to be produced at the scale to be used in society at large. Being a new technique, its potential is still relatively unknown.
We will then apply the patterning technique to the manufacture of advanced materials that can combine conventional electronics based on silicon with optical communications. Whilst silicon is a mature material for making electronics, it manages light poorly. By growing crystals of good optical materials such as indium phosphide directly on silicon we will combine the optimum properties of both materials to make an engineered super-material. But this can only be done cost-effectively by using the very fine patterning that is possible with Displacement Talbot Lithography.
To achieve these goals, the University of Bath and Cardiff University are combining their expertise and working together. Researchers at Bath are experts in large area nanofabrication whilst those at Cardiff are experts in growing group III-V semiconductor crystals for use in optical communications. We will also be partnering with UK manufacturing industry who have the interest and ability to exploit the results and have the wider industry connections to pass on the benefits up the supply chain: Newport Wafer Fab is an advanced semiconductor processing facility that currently boasts International Rectifier, Motorola, Samsung, STM as its clients, whilst PragmatIC Semiconductor is a world leader in ultra-low-cost flexible electronics.
Publications
Semlali E
(2024)
Control of SAG-GaN at the Nanoscale
in Crystal Growth & Design
Semlali E
(2024)
Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE.
in Nanotechnology
Yan Z
(2025)
MOCVD-grown InAs/InP quantum dot lasers with low threshold current
in Optics Express
Fan P
(2025)
Impact of positioning error in double displacement Talbot lithography
in Optics Express
Mao H
(2025)
Rapid Nanocellulose Wet Nanoimprint Lithography for Tunable Structural Color
in ACS Nano
| Description | The research programme examined the extent to which the technique of Displacement Talbot Lithography can be used as a tool to rapidly create nanostructured materials in a manufacturing setting. A significant part of the research focused on developing repeatable processes to allow for the nanostructuring of silicon wafers with 'v-grooves' with dimensions at the 50-150 nm scale which would have the potential to impact the manufacture of photonic integrated circuits. This proved challenging in a university research environment and highlighted the need to understand the impact of individual processing steps on the material surfaces that affected subsequent steps. More successful was the exploration of 'Double' Displacement Talbot Lithography, a technique that was developed at the University of Bath a short period before the start of the grant. Results generated in the last weeks of the grant suggested that one of the key ideas originally proposed was much more successful than expected. On-going work is currently underway to generate full datasets for publication and to demonstrate the impact of the discovery. |
| Exploitation Route | The latest successful results generated from this award are being prepared for publication and have the potential to form the basis of further collaborations with industry or academia. |
| Sectors | Electronics Manufacturing including Industrial Biotechology |
| Description | Imperial College - Cabral |
| Organisation | Imperial College London |
| Country | United Kingdom |
| Sector | Academic/University |
| PI Contribution | The team at the University of Bath provided samples created by nanoimprint lithography and displacement Talbot lithography to contribute to the work being carried out at Imperial COllege. |
| Collaborator Contribution | The Imperial College team led the work in exploring the use of large area nanolithography to use nanostructured cellulose to create structural colour. |
| Impact | 10.1021/acsnano.5c15904 |
| Start Year | 2024 |
| Description | Nanostructured templates for HVPE regrowth |
| Organisation | University of Clermont Auvergne |
| Country | France |
| Sector | Academic/University |
| PI Contribution | Prepared patterned samples and hosted a PhD researcher in our lab. |
| Collaborator Contribution | Provided samples for patterning and performed subsequent regrowth. |
| Impact | https://doi.org/10.1021/acs.cgd.3c00172 https://doi.org/10.1021/acs.cgd.2c01105 https://doi.org/10.1088/2399-1984/ab8450 |
| Start Year | 2019 |
| Description | Nanostructured templates for nanorod growth |
| Organisation | University of Clermont Auvergne |
| Country | France |
| Sector | Academic/University |
| PI Contribution | Preparation of patterned templates for further growth of semiconductor nanorods. |
| Collaborator Contribution | Growth of semiconductor nanorods on the patterned templates provided by the University of Bath |
| Impact | Mohammed Zeghouane et al 2020 Nano Futures 4 025002, https://doi.org/10.1088/2399-1984/ab8450 |
| Start Year | 2022 |
