Device Electronics Based on nanoWires and NanoTubes
Lead Research Organisation:
University of Sheffield
Department Name: Electronic and Electrical Engineering
Abstract
There is considerable scope for CNFETs and Si Nanowires with their capability of ballistic transport, to be introduced into standard CMOS via a hybrid technology.The main reason currently hampering the use of this technology is an absence of controlled fabrication techniques in MOS type configurations with predictable device characteristics. Adequate physical models and simulation tools are necessary to address this issue.collaborative research involves four partners: 1) Pisa : Atomistic modelling of ballistic transport in gated structures with contacts. (2) Vienna: Effective mass approach to transport inclusive of scattering.(3) De Montfort University : Characterisation, parameter extraction and defect analysis of devices fabricated at Cambridge. The parameters will be fed into the modelling at Pisa and Vienna.(4) Cambridge University : Fabrication of devices.overall goal of the project is to carry out a comprehensive analysis linking theory with experiment to enable some fundamental design rules for fabrication of such technologies in future.
People |
ORCID iD |
| Maria De Souza (Principal Investigator) |
Publications
Premlal B
(2009)
Surface intercalation of gold underneath a graphene monolayer on SiC(0001) studied by scanning tunneling microscopy and spectroscopy
in Applied Physics Letters
Cranney M
(2010)
Superlattice of resonators on monolayer graphene created by intercalated gold nanoclusters
in EPL (Europhysics Letters)
Casterman D
(2007)
Ab initio investigation of charge transfer technique for control of Schottky contacts in CNTs
in Journal of Materials Science: Materials in Electronics
Casterman D
(2009)
Effect of Hydrazine on Al-Contacted Carbon Nanotube Field Effect Transistors Using Density Functional Theory
in Journal of Scientific Conference Proceedings
Jejurikar S
(2010)
Anomalous n-type electrical behaviour of Pd-contacted CNTFET fabricated on small-diameter nanotube.
in Nanotechnology
Taioli S
(2009)
Electronic properties of extended graphene nanomaterials from GW calculations
in physica status solidi (b)
Casterman D
(2009)
Role of hybridization on the Schottky barrier height of carbon nanotube field effect transistors
in Physical Review B
Umari P
(2012)
Communication: electronic band gaps of semiconducting zig-zag carbon nanotubes from many-body perturbation theory calculations.
in The Journal of chemical physics
Pillai P
(2013)
Are carbon nanotubes still a viable option for ITRS 2024?
| Description | GW calculations of carbon nanotubes |
| Organisation | Elettra Sincrotrone Trieste |
| Country | Italy |
| Sector | Academic/University |
| PI Contribution | We used the code GWW supplied by Trieste to investigate accurate bandgaps in carbon nanotubes, which was a major objective of project. These bandgaps were subsequently used by us to accurately assess the device performance of these materials for future ITRS requirements. |
| Collaborator Contribution | Trieste supplied their inhouse code GWW using wannier functions for accuate calculation of bandgaps in carbon based materials |
| Impact | 1. S.Taioli, P. Umari and M. M. De Souza, "Electronic Properties of extended graphene nanomaterials from GW calculations", Phys. Status Solidi B, 1-5 (2009) / DOI 10.1002/pssb.200982339. 2. Electronic Bandgaps of semiconductor zig-zag carbon nanotubes using GW calculations", P. Umari, O. Petrenko, S. Tiaioli, M. M. De Souza, Journal of Chemical Physics 136, 181101 (2012) , most downloaded article in May 2012 3. Are Carbon Nanotubes still a viable option for ITRS 2024? P.B. Pillai, P. Umari and M. M. De Souza, Proc. IEEE IEDM 2013 |
| Start Year | 2009 |