Strain engineered InAs/GaAs quantum dots for long wavelength emission
Lead Research Organisation:
University of Sheffield
Department Name: Electronic and Electrical Engineering
Abstract
Submitted by partner institution
Organisations
People |
ORCID iD |
| Richard Hogg (Principal Investigator) |
| Description | We developed a clear understanding of the limitations in epitaxial growth of 1550nm QDs on GaAs. |
| Exploitation Route | These materials may find application in 1550nm SESAMs for ultra high speed optical comms. |
| Sectors | Digital/Communication/Information Technologies (including Software),Electronics |
| URL | http://etheses.whiterose.ac.uk/1933/2/Mohammed,_Abdul_Majid.pdf |
| Description | EPSRC |
| Amount | £48,045 (GBP) |
| Funding ID | EPSRC/UoS Doctoral Prize Fellowship 2011 |
| Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
| Sector | Public |
| Country | United Kingdom |
| Start | 10/2011 |
| End | 10/2012 |