Lasing of Erbium in Crystalline Silicon Photonic Nanostructures - LECSIN
Lead Research Organisation:
University of St Andrews
Department Name: Physics and Astronomy
Abstract
This project focuses on the control of radiative emission of Erbium ions in photonic crystal nanostructures made of crystalline Silicon, with the goal of achieving laser emission around 1.54 micron wavelength. To this purpose, photonic crystal waveguides and nanocavities will be fabricated in Si membranes containing Erbium ions. Photonic structures will be designed such that the high-Q cavity modes be resonant with the narrow lines corresponding to Er emission, in order to tailor the radiative dynamics and to enhance optical gain. Micro-photoluminescence and pump-probe experiments under suitable pumping conditions will probe the radiative emission of Er, to achieve net gain and lasing threshold. Theoretical studies of Er emission coupled to nanocavity modes will allow exploring cavity quantum electrodynamics effects. The proposal builds on a new partnership involving a number of Young Researchers by leading groups with complementary expertise in Silicon photonics, nanotechnology, nano-photonics, and quantum optics.
Publications
Welna K
(2013)
Photonic crystal nanocavities in GaAs/AlGaAs with oxidised bottom cladding
in Photonics and Nanostructures - Fundamentals and Applications
Welna K.
(2015)
High-
Q photonic crystal cavities realised using deep ultraviolet lithography
in ELECTRONICS LETTERS
| Description | We have enhanced silicon light emission by combining material processing and device engineering methods. Regarding materials processing, the emission level was increased by taking three routes. In all the three cases the emission was further enhanced by coupling it with a photonic crystal (PhC) cavity via Purcell effect. 1. The first approach involved the incorporation of optically active defects into the silicon lattice by hydrogen plasma treatment or ion implantation. This process results in broad luminescence bands centered at 1300 and 1500 nm. By coupling these emission bands with the photonic crystal cavity, we demonstrated a narrowband silicon light emitting diode at room temperature. This silicon nano light emitting diode has a tunable emission line in the 1300-1600 nm range. 2. In the second approach, a narrow emission line at 1.28µm was created by carbon ion implantation, termed "G-line" emission. The possibility of enhancing the emission intensity of this line via the Purcell effect was investigated 3. The third approach involved the deposition of a thin film of an erbium disilicate on top of a PhC cavity. The erbium emission is enhanced by the PhC cavity. Using this method, an optically pumped light source emitting at 1.54 µm and operating at room temperature was demonstrated. |
| Exploitation Route | A practical application of silicon light source developed in this project in gas sensing is also demonstrated. As a first step, we demonstrated refractive index sensing, which is a simple application for our source and demonstrates its capabilities, especially relating to the lack of cheap fiber coupling schemes. We also investigate several options for extending applications into on-chip biological sensing |
| Sectors | Digital/Communication/Information Technologies (including Software),Electronics,Healthcare |
| Description | Proof of Concept |
| Amount | £475,000 (GBP) |
| Organisation | Scottish Enterprise |
| Sector | Public |
| Country | United Kingdom |
| Start | 10/2013 |
| End | 10/2015 |
| Description | Starting Grant |
| Amount | € 1,495,452 (EUR) |
| Funding ID | 337508 |
| Organisation | European Research Council (ERC) |
| Sector | Public |
| Country | Belgium |
| Start | 12/2013 |
| End | 12/2018 |
| Title | Silicon photoluminescence as a means of optical characterisation |
| Description | By optical pumping silicon nanostructures, a spectral signature can be quickly obtained that shows how the device is operating and its quality. |
| Type Of Material | Improvements to research infrastructure |
| Year Produced | 2013 |
| Provided To Others? | Yes |
| Impact | None yet, but can potentially be used in industry as a means of wafer scale testing |
| Description | Collabaration with the University of Pavia |
| Organisation | University of Pavia |
| Country | Italy |
| Sector | Academic/University |
| PI Contribution | We fabricate and design a range of nanophotonic devices. |
| Collaborator Contribution | The team at the Unversity perform optical characterisation of the samples and provide input into the design process. |
| Impact | 10.1063/1.3080683 10.1002/lpor.201200043 10.1016/j.photonics.2012.12.002 10.1016/j.physb.2011.12.115 10.1063/1.3580613 10.1063/1.3591174 10.1063/1.4803541 10.1088/0268-1242/27/4/045016 10.1088/2040-8978/12/10/104004 10.1103/PhysRevB.84.045423 10.1109/IPCon.2012.6358596 10.1109/IPCon.2012.6358851 10.1109/JQE.2012.2204960 10.1117/12.909248 10.1117/12.909389 10.1364/OE.18.016064 10.1364/OE.18.026613 10.1364/OE.21.010278 10.1364/OL.36.003100 10.1364/OL.38.000154 |
| Start Year | 2009 |
| Title | WAVE VECTOR MATCHED RESONATOR AND BUS WAVEGUIDE SYSTEM |
| Description | An optical device including: a waveguide of refractive index na for carrying at least one mode of at least one wavelength, and at least one resonator with a resonant wavelength. The resonator has a mode volume of less than ten cubic resonant wavelengths. In use light in the waveguide is vertically coupled into the at least one resonator, and the waveguide and resonator(s) are arranged to provide wave-vector matching between at least one mode of the resonator and at least one mode of the waveguide. |
| IP Reference | WO2013017814 |
| Protection | Patent application published |
| Year Protection Granted | 2013 |
| Licensed | Commercial In Confidence |
| Impact | Two projects have arisen from this discovery |