Nitrides for the 21st century
Lead Research Organisation:
University of Manchester
Department Name: Physics and Astronomy
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
People |
ORCID iD |
| Philip Dawson (Principal Investigator) |
Publications
Zhu D
(2011)
High-efficiency InGaN/GaN quantum well structures on large area silicon substrates
in physica status solidi (a)
Trifanov A
(2016)
The digital filtration preprocessing of variable magnetic field Hall data before mobility spectrum analysis for p-MCT films
in physica status solidi c
Schulz S
(2010)
Electronic and optical properties of nonpolar a -plane GaN quantum wells
in Physical Review B
Schulz S
(2015)
Structural, electronic, and optical properties of m -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
in Physical Review B
Oliver R
(2013)
The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes
in Applied Physics Letters
Massabuau F
(2014)
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the "green gap" problem
in Applied Physics Letters
Massabuau F
(2014)
The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method
in Journal of Crystal Growth
Kundys D
(2016)
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a -plane and m -plane GaN substrates
in Science and Technology of Advanced Materials
Humphreys CJ
(2017)
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.
in Ultramicroscopy
Hammersley S
(2016)
Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs
in physica status solidi c
Hammersley S
(2011)
Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure
in physica status solidi c
Hammersley S
(2015)
Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
in Applied Physics Letters
Hammersley S
(2016)
Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures
in physica status solidi c
Hammersley S
(2014)
Carrier distributions in InGaN/GaN light-emitting diodes
in physica status solidi (b)
Dunn A
(2016)
Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy
in physica status solidi c
Dawson P
(2016)
The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells
in Journal of Applied Physics
Davies M
(2014)
A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures
in physica status solidi (b)
Davies M
(2014)
Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures
in physica status solidi c
Davies M
(2014)
The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures
in Applied Physics Letters
Davies M
(2013)
High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop
in Applied Physics Letters
Davies M
(2016)
A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers
in Journal of Applied Physics
Davies M
(2014)
The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells
in physica status solidi c
Davies M
(2016)
Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells
in Applied Physics Letters
Christian G
(2016)
Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells
in physica status solidi c
Badcock TJ
(2010)
Electronic structure of a-plane GaN/AlGaN quantum wells
in Physica Status Solidi
Badcock T
(2014)
Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures
in physica status solidi c
Badcock T
(2011)
Properties of surface-pit related emission in a -plane InGaN/GaN quantum wells grown on r -plane sapphire
in physica status solidi c
Badcock T
(2012)
Exciton confinement in narrow non-polar InGaN/GaN quantum wells grown on r -plane sapphire
in physica status solidi (b)
Badcock T
(2013)
Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells
in Japanese Journal of Applied Physics
Badcock T
(2011)
The effect of indium concentration on the optical properties of a -plane InGaN/GaN quantum wells grown on r -plane sapphire substrates
in physica status solidi (a)
Badcock T
(2014)
Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells
in Journal of Applied Physics
Badcock T
(2010)
Carrier dynamics in non-polar GaN/AlGaN quantum wells intersected by basal-plane stacking faults
in physica status solidi c
Badcock T
(2011)
Modification of carrier localization in basal-plane stacking faults: The effect of Si-doping in a -plane GaN
in physica status solidi (b)
Badcock T
(2011)
The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates
in Japanese Journal of Applied Physics
Badcock T
(2013)
Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures
in Japanese Journal of Applied Physics
Badcock T
(2010)
Characterising the degree of polarisation anisotropy in an a -plane GaN film
in physica status solidi c
| Description | The continuity of funding has enabled us to make significant advances in the following areas: 1. Understanding of the reduction in efficiency of GaN based LEDs at high drive currents. 2. Obtaining a comprehensive understanding of the role of field controlling layers in InGaN LEDs. 3. We have undertaken a program of research on GaN based structures in which the electric field which limits the efficiency is reduced. 4. Obtained more detailed understanding of the light generation processes in polar and non polar InGaN quantum wells. |
| Exploitation Route | The results of our work are available to the UK manufacturers of LEDS enabling them to be more competitive in this demanding market. |
| Sectors | Digital/Communication/Information Technologies (including Software),Education,Electronics,Energy |
| Description | Beyond blue |
| Amount | £464,496 (GBP) |
| Funding ID | EP/M010627/1 |
| Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
| Sector | Public |
| Country | United Kingdom |
| Start | 01/2015 |
| End | 12/2020 |
| Description | Lighting the Future |
| Amount | £6,330,270 (GBP) |
| Funding ID | EP/I012591/1 |
| Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
| Sector | Public |
| Country | United Kingdom |
| Start | 12/2010 |
| End | 11/2015 |
| Description | Study of semi-polar and non-polar nitride based structures for opto-electronic device applications |
| Amount | £385,382 (GBP) |
| Funding ID | EP/J001627/1 |
| Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
| Sector | Public |
| Country | United Kingdom |
| Start | 09/2011 |
| End | 07/2014 |
| Description | Collaboration with Tyndall Insitute |
| Organisation | University College Cork |
| Department | Tyndall National Institute |
| Country | Ireland |
| Sector | Academic/University |
| PI Contribution | Input to theory work done at Tyndall Institute |
| Collaborator Contribution | Theoretical input to program |
| Impact | Significant number of papers |
| Start Year | 2009 |
| Description | Light for life |
| Form Of Engagement Activity | Participation in an open day or visit at my research institution |
| Part Of Official Scheme? | Yes |
| Geographic Reach | National |
| Primary Audience | Public/other audiences |
| Results and Impact | Active engagement in making the general public aware of the consequences of our research. We have been asked to give repeat performances, most notably at the event "jodrell Live", which attacts many thousands of visitors. |
| Year(s) Of Engagement Activity | 2011,2012,2013,2014 |
| Description | Sci Bar talk |
| Form Of Engagement Activity | Participation in an activity, workshop or similar |
| Part Of Official Scheme? | No |
| Geographic Reach | Regional |
| Primary Audience | Public/other audiences |
| Results and Impact | Talk to organisation which aims to inform public of latest scientific research |
| Year(s) Of Engagement Activity | 2015 |