Room Temperature Terahertz Quantum Cascade Lasers on Silicon Substrates
Lead Research Organisation:
University of Leeds
Department Name: Electronic and Electrical Engineering
Abstract
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Publications
Kelsall R
(2013)
(Invited) Germanium/Silicon Heterostructures for Terahertz Emission
in ECS Transactions
Dinh T
(2012)
Extended density-matrix model applied to silicon-based terahertz quantum cascade lasers
in Physical Review B
Valavanis A
(2011)
Material configurations for n -type silicon-based terahertz quantum cascade lasers
in Physical Review B
| Description | We have developed simulation tools which we have used to investigate the feasibility of using germanium and silicon-germanium multilayer structures to form far-infra-red (terahertz) lasers. We have optimised designs for these lasers and investigated the accuracy required in the semiconductor layer growth process in order to achieve laser operation. |
| Exploitation Route | Laser design and simulation work can be adopted by research groups attempting to grow and fabricate multilayer terahertz laser structures, and may ultimately be adopted by the semiconductor photonics industry. |
| Sectors | Aerospace, Defence and Marine,Digital/Communication/Information Technologies (including Software),Electronics,Environment,Healthcare,Security and Diplomacy |