Near infrared single photon detection using Ge-on-Si heterostructures
Lead Research Organisation:
University of Leeds
Department Name: Electronic and Electrical Engineering
Abstract
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Organisations
Publications
Warburton R
(2013)
Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm
in IEEE Transactions on Electron Devices
Pilgrim N
(2013)
Influence of absorber layer dopants on performance of Ge/Si single photon avalanche diodes
in Journal of Applied Physics
| Description | We have designed germanium/silicon multilayer device structures for the detection of single photons, and have shown how these may be integrated into an optical circuit on a silicon chip. |
| Exploitation Route | Device designs may be adopted by experimental research groups and by the semiconductor manufacturing industry. |
| Sectors | Aerospace, Defence and Marine,Digital/Communication/Information Technologies (including Software),Electronics |