Entangling dopant nuclear spins using double quantum dots
Lead Research Organisation:
University of Southampton
Department Name: Electronics and Computer Science
Abstract
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Publications
| Description | Fabrication yield reduction due to electrostatic in the silicon wafer. We have now improved our fabrication process to improve the device yield per silicon wafer and produced few dopants single electron transistors for low temperature experiment. Beneficiaries: Scientists, engineers and manufacturers working on low power logic devices for solid state memory and sensors. |
| Exploitation Route | New fabrication approach to mitigate the electrostatic issues by introducing metallic discharge layer. We have introduced new annealing process for the diffusion of the dopants to create the few dopants single electron devices. |
| Sectors | Digital/Communication/Information Technologies (including Software),Electronics,Energy,Healthcare,Manufacturing, including Industrial Biotechology |
| Description | Faculty of Physical Sciences and Engineering Postgraduate Scholarship |
| Amount | £15,000 (GBP) |
| Organisation | University of Southampton |
| Sector | Academic/University |
| Country | United Kingdom |
| Start | 10/2014 |
| End | 09/2017 |
| Description | Research collaboration with Japan Advanced Institute of Science and Technology |
| Organisation | Japan Advanced Institute for Science and Technology |
| Country | Japan |
| Sector | Private |
| PI Contribution | Joint research grant application to EPSRC-JSPS |
| Collaborator Contribution | Research grant application to JSPS and PhD studentship |
| Impact | PhD studentship exchange programme between JAIST and Southampton |
| Start Year | 2012 |