GaN Electronics: RF Reliability and Degradation Mechanisms

Lead Research Organisation: Cardiff University
Department Name: Sch of Engineering

Abstract

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Publications

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Brazzini T (2015) Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence in Microelectronics Reliability

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Brazzini T (2015) Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation in Applied Physics Letters

 
Description Demonstrated the ability to performed optical characterisation while exiting the device under controlled RF conditions.
Exploitation Route Established a feasible measurement approach to investigate degradation under RF excitation.
Sectors Aerospace, Defence and Marine,Digital/Communication/Information Technologies (including Software),Electronics