High Current Module and Technologies Optimised for HVDC

Lead Research Organisation: University of Cambridge
Department Name: Engineering

Abstract

The proposed research will investigate the role that advanced power semiconductor module design can play in improving the efficiency and increasing the capacity of Voltage Source, HVDC converters.

Growing use of HVDC for integration of renewable energy sources and transnational electricity transmission is driving development HVDC technologies. Within Europe there are over 20 HVDC schemes currently planned and under construction most of which will employ new IGBT based Voltage Source Converter (VSC) technology. The development of new multi-level converters greatly raised DC operating voltages in VSC converters and improved their performance.

Despite these significant advances, there are still strong drivers to raise both capacity and efficiency. To date multi-level HVDC typically utilises high voltage power semiconductor modules originally designed for other applications. At projected deployment rates, VSC-HVDC is likely to become one of the key markets for high voltage power. The size of this potential market justifies the development of a new power semiconductor switch, specifically designed around the needs of multi-level VSC converters. Such a power switch will be a composite of high capacity multi-device module and an associated intelligent gate drive which can optimise module performance in multi-level VSC systems. It is proposed that such techniques can provide significant gains in both converter capacities and efficiency at a reduced cost.

Planned Impact

I. Academic Impact
This EPSRC Project brings together two of the UK's leading research institutions in the area of Power Semiconductor devices and adds one of the UK's leading research teams in the area of power electronic applications particularly in the power systems environment. The academic team is supported by one of the worlds leading suppliers of HVDC projects and a world leading semiconductor device manufacturer in the area of high power semiconductors and an original start up which is rapidly becoming a partner of choice in power semiconductor gate drives. The support of the companies allows the academic team to progress more quickly by adding world class engineering effort to what is undoubtedly a serious scientific project. The project is directly aimed at accelerating the development of cost effective HVDC Transmission schemes. By addressing the science of the main active component, it's capacity can be increased to a level whereby such schemes are the required power , the efficiency increased, the robustness to faults improved and the cost reduced. The mutual understanding between the industry partners and the academic teams also brings a new perspective and a mix of expertise such that the challenges being addressed could not be seriously attempted by any one of the partners. The rapidly expanding nature of this field also demands an expanded pool of talented researchers and the professional and academic development of the Post Doctoral Research Assistants is seen as a significant contribution to the skills shortage in this area [1]. The wider direct academic impact will be in publications and patents and a plan and draft agreement exists to facilitate this. To aid the project and widen the impact academic, guest participation in meetings is planned. It is also anticipated that this project will reveal technical pathways which can be addressed in the proposed TSB HVDC program (see details of this call) . It is also anticipated that results here will help provide pathways to impact for the non application specific projects funded by the EPSRC Underpinning Power Electronics 2012 program [2]
I. Economic Impact
The UK economy needs to replace ageing generation equipment and the national will is to provide a significant amount of power through wind generation to make the economy independent of fluctuating energy prices [3]. On shore Wind power has been identified by the uk government as "one of the most cost-effective and proven renewable energy technologies" [4]. Yet many of the best locations remain remote. This project is aimed at advancing HVDC technology so that HVDC schemes can deliver the renewable power at a high power level, with improved cost effectiveness through lower component costs, higher efficiency and an improved robustness to temporary faults such that the system does not trip out leaving manufacturers and domestic consumers without power. All of these factors influence the adoption of such a scheme and ultimately energy prices in the long term. There is a clear route to economic impact via the partner companies including Amantys, a UK start-up company using aspects of earlier EPSRC funded research.
I. Societal Impact
This research will contribute to climate change mitigation by facilitating expansion of HVDC schemes and the integration of clean generation particularly wind farms. By facilitating HVDC deployment, this research will help to meet the desire for wind farms to be remotely located on shore and offshore and reduce CO2 emissions (REF). A further expansion of HVDC will facilitate the delivery of large amounts of electric power to major cities for us in use in personal transport whilst reducing oil dependence and CO2 emissions (electric cars and vans will consume half the UK's Electricity by 2050) [4]. Future developments in the European Super grid will allow Geothermal, Hydro and Solar power to be delivered to the UK and Western Europe from the source locations.

Publications

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Davletzhanova Z. (2018) Impact of leakage currents on voltage sharing in series connected SiC Power MOSFETs and silicon IGBT devices in 2018 20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe

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Gao B (2017) A Temperature Gradient-Based Potential Defects Identification Method for IGBT Module in IEEE Transactions on Power Electronics

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Gonzalez J.O. (2017) Impact of temperature imbalance on junction temperature identification for multiple chip modules using TSEPs in PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

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Roscoe N (2018) LV Converters: Improving Efficiency and EMI Using Si MOSFET MMC and Experimentally Exploring Slowed Switching in IEEE Journal of Emerging and Selected Topics in Power Electronics

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Russell S (2017) Heteroepitaxial Beta-Ga 2 O 3 on 4H-SiC for an FET With Reduced Self Heating in IEEE Journal of the Electron Devices Society

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Zhong Y (2018) High-Efficiency mosfet-Based MMC Design for LVDC Distribution Systems in IEEE Transactions on Industry Applications

 
Description The connection of SiC MOSFETs in series is very attractive as the device output capacitances are high, due to the thin WBG substrate used. This encourages self controlled dv/dt and capacitive voltage sharing, eliminating risk of over voltage on any one part. The use of SiC MOSFETs in parallel with Si IGBTs offers fast switching with low losses at a reasonable cost, using in expensive gate drivers.

The high thermal conductivity of SiC allows the heat created in the thin device at the top surface of the crystal to propagate into the bulk of the SiC device in the timescales of the switching as proposed without the peak temperature being increased too high. This allows the SiC device to assist in IGBT switching as the originally proposed 'diverter' and opens up a wide range of possible timings and current ratings to be used.
Exploitation Route The early key findings can be used by others in industry to design products. The optimisation of SiC MOSFETs by industry and academia can aim for matched and significant capacitances, when intended for use in series. Further optimisation of IGBTs by industry and academia becomes possible if they are co-switched with SiC MOSFETs. We anticipate taking the optimisation of IGBTs forward as part of this project. We will continue with investigations into the design of SiC MOSFETs in this project and we will work with SiC MOSFET manufacturers to develop suitable SiC MOSFETs
Sectors Electronics,Energy

 
Description Public presentations of research led to a consulting project with Borg Warner at low powers.
First Year Of Impact 2017
Sector Electronics,Transport
 
Description Quietening ultra-low-loss SiC & GaN waveforms
Amount £1,980,066 (GBP)
Funding ID EP/R029504/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 06/2018 
End 06/2022
 
Description Module and Technologies for HVDC 
Organisation University of Edinburgh
Country United Kingdom 
Sector Academic/University 
PI Contribution Project Team is currently Cambridge Edinburgh and Warwick
Collaborator Contribution See publications
Impact See Publications etc.
Start Year 2014
 
Description Module and Technologies for HVDC 
Organisation University of Strathclyde
Country United Kingdom 
Sector Academic/University 
PI Contribution Project Team is currently Cambridge Edinburgh and Warwick
Collaborator Contribution See publications
Impact See Publications etc.
Start Year 2014
 
Description Module and Technologies for HVDC 
Organisation University of Warwick
Country United Kingdom 
Sector Academic/University 
PI Contribution Project Team is currently Cambridge Edinburgh and Warwick
Collaborator Contribution See publications
Impact See Publications etc.
Start Year 2014
 
Description IEEE Webinar Santa Clara Valley, San Francisco, & Oakland/East Bay USA 
Form Of Engagement Activity A broadcast e.g. TV/radio/film/podcast (other than news/press)
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact The presentation will start by exploring the significant benefits that can come from using GaN power switching devices in hard-switched PWM applications. It will then be explained how these benefits can be fully realized with a power circuit, gate-drive and PCB layout that are all optimised for fast switching. The performance of such an optimised circuit can only be successfully tested and varified using high performance non-intrusive measurement and instrumentation systems, such as the embedded measurement circuits that will be presented by the authors. Further to this, the circuit design for a linear current-source gate-drive will be presented and compared to a conventional resistive gate drive. Consideration will be given to reliable operation, improved efficiency and reduced EMI.
The goal of this presentation is to demonstrate how to achieve practical, efficient and reliable operation of GaN devices in high-frequency high-power switching circuits. There were questions afterwards moderated by the chairman.
Year(s) Of Engagement Activity 2017
URL http://ewh.ieee.org/r6/scv/pels/archives.html
 
Description Workshop at APEC Conference 
Form Of Engagement Activity Participation in an activity, workshop or similar
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact A 3hr presentation on Wide Bandgap devices with various speakers organised by Cambridge, as an expansion of our Webcast talk to include device manufacturers and users - edited by us.
Year(s) Of Engagement Activity 2018
URL http://apec.dev.itswebs.com/
 
Description Workshop at PCIM Conference. 
Form Of Engagement Activity Participation in an activity, workshop or similar
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact An all day tutorial with multiple presenters orgainised by us but with some results as a spin off activity from this grant. Leading worldwide exhibition in the power electronics area.
Year(s) Of Engagement Activity 2018
URL https://pcim.mesago.com/events/en.html