Advanced III-nitride materials for next generation UV emitters used in water purification, environmental protection and local network communication

Lead Research Organisation: University of Sheffield
Department Name: Electronic and Electrical Engineering

Abstract

The delivery of a sustainable future needs an excellent management of natural resources and also requires the world's environment to be maintained in good condition. Both of these are crucial for maintaining sustainable development and can be promoted by the development of advanced materials which can be fabricated into improved ultraviolet (UV) light sources. 280 nm or sub-280 nm UV light sources have many important applications in establishing high standard infrastructures, such as water purification, environmental protection, local network communication, medical equipment decontamination, etc.

Therefore, it is crucial to obtain advanced materials with these multiple functions in high crystal quality which can be fabricated into compact, light-weight and robust 280 nm UV emitters with high efficiency. The III-nitride semiconductor alloy AlGaN, has a direct bandgap across its entire composition range, covering a major part of the UV spectrum from 210 to 365 nm, and is the best material system to realize such a lighting source. The last decade has seen impressive developments in III-nitrides. However, the achievements are largely limited to the InGaN/GaN material system for the fabrication of the emitters mainly in the visible spectra region. High Al content AlGaN or AlN are required to achieve emission at 280 nm. In the last decade, considerable effort has been to the development of deep-UV III-nitride materials world wide. However, the results are far from satisfactory. The major issue is due to AlGaN or AlN material currently grown on c-plane substrates. These polar III-nitride semiconductor materials lead to a number of severe fundamental limits in science and technology, which are heavily restricting further development of deep UV emitters.

The proposed project will combine our extensive and complementary experiences in advanced metal-organic vapour phase epitaxy (MOVPE) growth and nanofabrication technology (Sheffield), optical and electron-beam studies of III-nitrides (Strathclyde), micro-structural investigation (Imperial), and advanced Hydride Vapour Phase Epitaxy (HVPE) growth for free-standing AlN substrate and flip-chip device fabrication (Nanjing, China). The combined research and development programme aims to achieve an understanding of the interrelated individual issues, and then to achieve advanced non/semi-polar AlGaN or AlN which will be applied to the demonstration of a new type of non/semi-polar LEDs. We also aim to develop the first 280 nm UV laser diode (non/semi-polar LDs), while the shortest wavelength laser diode reported so far is limited to 336 nm.

Planned Impact

The proposed work will lead to extensive impacts on technologies, society, economy and environment. More than 3.4 million people across the world die each year from water, sanitation, and hygiene-related reasons, and 780 million people lack access to an improved water source. In China, rapidly economic development is leading to generation of more and more industrial wastewater. This increases a high risk of contaminating the environment and also causes a significant reduction in water consumption per person. The severe air-pollution has led to a new policy for limiting the usage of private vehicles in the large cities in China. The air-pollution also exists in the large cities in the developed countries, such as UK, USA, etc., partially contributing to current climate change, which has been strongly evidenced by very recently severe flooding in the UK and extreme weather conditions in US.

The project will lead to major economic impact in both the UK and China. The Nanjing team has signed an agreement with the local government in order to promote technology commercialisation on III-nitrides. The Nanjing team and Sheffield team have established a joint research centre on III-nitrides. The international impact on both the UK and China will be further enhanced through the project using the joint centre as a platform.

Prof Wang's team and Seren Photonics Ltd as a spinout from his team have established extensive formal and informal collaborations with semiconductor industry in both the UK and overseas, such as IQE (Cardiff), Enfis (Swansea), Forge Europa Ltd (Cumbria), Zeta-control (Oxford), Plessey semiconductor (Swindon/Plymouth), Orsam (Germany), OptoGaN (Russian), Philip-Lumileds (USA) etc. Prof Martin has worked closely with the semiconductor industry, such as the semiconductor equipment company SemiMetrics Ltd. and lighting company McCann Energy Ltd.. He is a lead partner in the Intelligent Lighting Centre within Strathclyde's £100M Technology and Innovation Centre (TIC), bringing together high numbers of academic and industrial researchers across a wide range of disciplines. A number of TIC partners offer high potential for engagement with the work in this project, for example, the Fraunhofer Centre for Applied Photonics.

Any technological breakthrough made through the project will impact a wide range of academic areas based on the study of III-nitrides through the UK Nitride Consortium (UKNC) and EPSRC National Centre for III-V Technologies which Sheffield is host to. The project will lead to widely academic impact in China through so-called "973" programmes on III-nitrides, where a large number of the research teams including Nanjing team in China are involved. The project will provide PDRAs and Ph.D students with an excellent opportunity to work in an interdisciplinary environment, offering excellent experience for their future career development. The training provided for the PDRAs and Ph.D students will have a direct economic impact via the provision of skilled workers which are critical requirements in maintaining the competitive edge of both UK and Chinese companies.

The project involves development of new technologies in advanced materials, nanotechnology, healthcare, wireless communication, all representing the frontiers in current research areas. All these also perfectly align to EPSRC priority areas, such as Manufacturing, Digital, Economy, Energy and Healthcare as well as with similar TSB areas. The vibrancy and importance of III-V activities in the UK were backed up by the recent Road-mapping exercise in III-V semiconductors (2012), where III-nitride LEDs has been ranked as one of the highest priorities. Its importance was further highlighted by its inclusion by David Willetts in his document 'Eight Great Technologies'. Research on III-nitrides, such as our proposed work, will contribute to the development of a sustainable world with high standard infrastructure over the next 10-50 years.

Publications

10 25 50
publication icon
Tang R (2021) Ga 2 O 3 /GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response in ACS Applied Electronic Materials

publication icon
Bai J (2020) Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (µLEDs) with Narrow Spectral Line Width. in ACS nano

publication icon
Ghataora S (2017) Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes with Nonradiative Förster Resonance Energy Transfer in ACS Photonics

publication icon
Holly Haggar JI (2022) Study of the Luminescence Decay of a Semipolar Green Light-Emitting Diode for Visible Light Communications by Time-Resolved Electroluminescence. in ACS photonics

publication icon
Bai J (2020) A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (µLEDs). in ACS photonics

publication icon
Syed Z (2019) Ultra-Energy-Efficient Photoelectrode Using Microstriped GaN on Si in ACS Photonics

publication icon
Li Q (2022) Two-Inch Wafer-Scale Exfoliation of Hexagonal Boron Nitride Films Fabricated by RF-Sputtering in Advanced Functional Materials

publication icon
Li Z (2017) Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition in Applied Physics Letters

publication icon
Kusch G (2015) Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N in Applied Physics Letters

publication icon
Hou Y (2017) Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes in Applied Physics Letters

 
Title Data for: "Cathodoluminescence studies of chevron features in semi-polar (11-22) InGaN/GaN multiple quantum well structures" 
Description This dataset provides the experimental data used to generate the figures in the paper entitled "Cathodoluminescence studies of chevron features in semi-polar (11-22) InGaN/GaN multiple quantum well structures". The cathodoluminescence (CL) data discussed and presented in the paper was recorded using a variable pressure field emission scanning electron microscope (SEM, FEI Quanta 250) which is equipped with a custom-built CL hyperspectral imaging system. The CL system collects the emitted light at an angle of 45° with respect to the incident electron beam using a Cassegrain reflecting objective. The light is then dispersed using a 125 mm focal length spectrograph (Oriel MS125) and detected using an electron-multiplying charge-coupled device (Andor Newton). As the electron beam scans across the sample surface, a whole CL spectrum is recorded per pixel building up the 3D hyperspectral data set. 2D CL images can then be extracted from the hyperspectral data set, such as peak energy, intensity or half width. The electron beam-induced current (EBIC) is acquired using a Stanford pre-amplifier connected to the output of an LED. The pre-amp is connected to the computer via an analogue-to-digital converter, and a value for the voltage (from which the current can be calculated) is measured for every pixel in the map. The EBIC and CL are recorded simultaneously. Characterisation of the surface morphology was performed using atomic force microscopy (AFM, Bruker Dimension with Icon scanner) in PeakForce tapping mode with ScanAsyst Air probes. Abstract of the paper: Epitaxial overgrowth of semi-polar III-nitride layers and devices often leads to arrowhead-shaped surface features, referred to as chevrons. We report on a study into the optical, structural and electrical properties of these features occurring in two very different semi-polar structures, a blue-emitting multiple quantum well (MQW) structure and an amber-emitting light-emitting diode (LED). Cathodoluminescence (CL) hyperspectral imaging has highlighted shifts in their emission energy, occurring in the region of the chevron. These variations are due to different semi-polar planes introduced in the chevron arms resulting in a lack of uniformity in the InN incorporation across samples, and the disruption of the structure which could cause a narrowing of the QWs in this region. Atomic force microscopy has revealed that chevrons can penetrate over 150 nm into the sample, and quench light emission from the active layers. The dominance of non-radiative recombination in the chevron region was exposed by simultaneous measurement of CL and the electron beam-induced current (EBIC). Overall these results provide an overview of the nature and impact of chevrons on the luminescence of semi-polar devices. 
Type Of Art Image 
Year Produced 2018 
URL https://pure.strath.ac.uk/portal/en/datasets/data-for-cathodoluminescence-studies-of-chevron-feature...
 
Title Data for: "Luminescence behaviour of semi-polar (10-11) InGaN/GaN 'bow-tie' structures on patterned Si substrates" 
Description This dataset provides the experimental data used to generate the figures in the paper entitled "Luminescence behaviour of semi-polar (10-11) InGaN/GaN 'bow-tie' structures on patterned Si substrates". The room temperature cathodoluminescence (CL) data was recorded using a variable pressure field emission scanning electron microscope (SEM, FEI Quanta 250) which is equipped with a custom-built CL hyperspectral imaging system. The CL system collects the emitted light at an angle of 45° with respect to the incident electron beam using a Cassegrain reflecting objective. The light is then dispersed using a 125 mm focal length spectrograph (Oriel MS125) and detected using an electron-multiplying charge-coupled device (Andor Newton). Low temperature CL was performed in a field emission gun SEM (Zeiss LEO DSM 982) equipped with custom-built liquid helium flow cryostage (CryoVac). The light was collected using a UV-enhanced glass fibre placed in close contact with the sample, dispersed with a 90 cm focal length monochromator (SPEX 1702) and detected using a liquid nitrogen-cooled, UV-optimised CCD. As the electron beam scans across the sample surface, a whole CL spectrum is recorded per pixel building up the 3D hyperspectral data set. 2D CL images can then be extracted from the hyperspectral data set, such as peak energy, intensity or half width. The room temperature and low temperature (12 K) measurements were acquired with a beam voltage of 5 kV. Electron channelling contrast imaging is a non-destructive, diffraction technique performed in the SEM. ECC images are generally constructed by measuring the intensity of the backscattered electrons (BSEs) as the electron beam scans across the surface of a suitably-orientated sample. Any changes in crystallographic orientation and local strain can be monitored by the variation in the BSE intensity causing a change in contrast in an ECC image. This allows the imaging of low-angle tilt and rotation boundaries, atomic steps and extended defects (e.g. TDs). ECCI is carried out in a forward scattering geometry in a field emission SEM (FEI Sirion 200), equipped with an electron-sensitive diode and a custom-built signal amplifier. Electron backscatter diffraction (EBSD) measurements were performed using a Nordlys EBSD detector from Oxford Instruments attached to an FEI Quanta 250 variable pressure field emission SEM. The EBSD data was acquired at 20 kV and at a sample tilt of 70° with respect to the normal of the incident electron beam. For the analysis of the EBSD data, the electron backscatter pattern (EBSP) from each pixel was compared to simulated dynamical Kikuchi patterns using a Bloch wave approach. Abstract of the paper: In this work, we report on the innovative growth of semi-polar 'bow-tie'-shaped GaN structures containing InGaN/GaN multiple quantum wells (MQWs), and on their structural and luminescence characterisation. We investigate the impact of growth on patterned (113) Si substrates which results in the bow-tie cross-section with upper surfaces having the (10-11) orientation. Room temperature cathodoluminescence (CL) hyperspectral imaging reveals two types of extended defects: black spots appearing in intensity images of the GaN near band edge emission; and dark lines running parallel in the direction of the Si stripes in MQW intensity images. Electron channelling contrast imaging (ECCI) identifies the black spots as threading dislocations (TDs) propagating to the inclined (10-11) surfaces. Line defects in ECCI, propagating in the [1-210] direction parallel to the Si stripes, are attributed to misfit dislocations (MDs) introduced by glide in the basal (0001) planes at the interfaces of the MQW structure. Identification of these line defects as MDs within the MQWs is only possible because they are revealed as dark lines in the MQW CL intensity images, but not in the GaN intensity images. Low temperature CL spectra exhibit additional emission lines at energies below the GaN bound exciton emission line. These emission lines only appear at the edge or the centre of the structures where two (0001) growth fronts meet and coalesce (join of the bow-tie). They are most likely related to basal-plane or prismatic stacking faults or partial dislocations at the GaN/Si interface and the coalescence region. 
Type Of Art Image 
Year Produced 2019 
URL https://pureportal.strath.ac.uk/en/datasets/c71c237d-a544-4bf5-b7d3-1432ea22608e
 
Title Dataset for characterisation of multi-wavelength emission from a single InGaN/GaN nanorod 
Description These data cubes represent the results of carrying out cathodoluminescence hyperspectral imaging on a single InGaN/GaN nanorod, grown at Tyndall National Institute. Details of the measurement are given in Measurement_details.txt, and a description of the proprietary file format in File_formats.txt. The simulation data from the FDTD simulations is provided by Jon Pugh and Martin Cryan from the University of Bristol. Further analysis and interpretation of this data is presented in the associated journal article: G. Kusch et al, Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging, Scientific Reports (2018) 
Type Of Art Image 
Year Produced 2018 
URL https://pure.strath.ac.uk/portal/en/datasets/dataset-for-characterisation-of-multiwavelength-emissio...
 
Description 1) Develop a new epitaxial growth approach for semipolar AlGaN for the applications in the ultraviolet (UV) spectral region, potentially next generation deep UV emitters; 2) Understand the large lattice-mismatch induced cracking issue and then develop a simple method to meet the challenge; 3) Understand the emission mechanisms of such a novel UV material ; 4) Demonstration of high crystal quality semi-polar AlGaN with high Al content on GaN regularly arrayed microrod templates, which is the best report ; 5) Optical investigation of semi-polar AlGaN with high Al content, for the first time demonstrating a reduction in exciton localization compared with its c-plane counterparts. This is very useful for the growth of deep UV laser structures ; 6) Micro-structural investigation to understand the defect reduction mechanism, showing a difference in reducing basal stacking fault density and dislocation density ; 7) Demonstrations of semi-polar AlGaN with an emission wavelength of around 260 nm, possibly the shortest wavelength for semi-polar AlGaN on sapphire so far; 8) Understanding the overgrowth mechanism of semi-polar AlGaN on patterned GaN templates;

8) A new approach for further improving non-polar GaN has been developed, and the relevant technology has been protected via filing IP. This is a generic technology, which can be used for any of industry-compatible substrates, such as Silicon or Sapphire. This technology are best for the growth of either UV emitters or RF/power devices.

9) A new method based on further selective overgrowth on such a non-polar GaN template has been developed in order to achieve a new kind of power devices with ultra-high power.

10) Establish an electro-chemical etching process for the fabrication of DBRs for III-nitride optoelectronics including UV emitters

11) Develop a selective overgrowth method to achieve microLEDs including UV LEDs
Exploitation Route The relevant technologies developed via the project will be planned to transfer to the UK III-nitride semiconductor industry, and will contribute to a few joint grant applications to further benefit other Universities widely. The University has appointed a dedicated person who is approaching industry people widely.

The new method based on selective overgrowth on such a non-polar GaN template for power devices has drawn industry's intensive attention, leading to a new grant application in collaboration with industrial partners. Part of the results achieved by the project has significantly contributed to an invite paper,"The 2020 UV Emitter Roadmap", J. Phys. D: Appl. Phys. 53, 503001 (2020). Part of the results achieved by the project has significantly contributed to the preparation of a joint grant application with Strathclyde and Cork. Part of the results achieved by the project has significantly contributed to the preparation of a joint grant application with Imperial College London in order to attack Covid-19 using a novel UV LED.
Sectors Digital/Communication/Information Technologies (including Software),Electronics,Energy,Environment,Healthcare,Manufacturing, including Industrial Biotechology,Pharmaceuticals and Medical Biotechnology,Security and Diplomacy
 
Title Data for: "Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaN" 
Description This dataset provides the experimental data used to generate the figures in the paper entitled "Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaN". The cathodoluminescence (CL) data discussed and presented in the paper was recorded using a variable pressure field emission scanning electron microscope (SEM, FEI Quanta 250) which is equipped with a custom-built CL hyperspectral imaging system. The CL system collects the emitted light at an angle of 45° with respect to the incident electron beam using a Cassegrain reflecting objective. The light is then dispersed using a 125 mm focal length spectrograph (Oriel MS125) and detected using an electron-multiplying charge-coupled device (Andor Newton). As the electron beam scans across the sample surface, a whole CL spectrum is recorded per pixel building up the 3D hyperspectral data set. 2D CL images can then be extracted from the hyperspectral data set, such as peak energy, intensity or half width. The room temperature CL measurements were acquired with a beam voltage of 5 kV. For the variable temperature photoluminescence (PL) measurements the samples were placed inside a liquid helium flow cryostat. A monochromator (SPEX1704) with a 1 m focal length and liquid nitrogen-cooled CCD were used for the detection of the emitted luminescence, which was excited by the 325 nm line of a He-Cd laser. Abstract of the paper: We investigate the influence of different types of template micro-patterning on defect reduction and optical properties of non-polar GaN using detailed luminescence studies. Non-polar (11-20) (or a-plane) GaN exhibits a range of different extended defects compared with its more commonly used c-plane counterpart. In order to reduce the number of defects and investigate their impact on luminescence uniformity, non-polar GaN was overgrown on four different GaN microstructures. The micro-patterned structures consist of a regular microrod array; a microrod array where the -c-side of the microrods has been etched to suppress defect generation; etched periodic stripes and finally a subsequent combination of etched stripes and etched microrods (double overgrowth). Overall the presence of extended defects, namely threading dislocations and stacking faults (SFs) is greatly reduced for the two samples containing stripes compared with the two microrod samples. This is evidenced by more uniform emission and reduction in dark regions of non-radiative recombination in room temperature cathodoluminescence imaging as well as a reduction of the SF emission line in low temperature photoluminescence. The observed energy shifts of the GaN near band edge emission are related to anisotropic strain relaxation occurring during the overgrowth on these microstructures. A combination of stripes and microrods is a promising approach for defect reduction and emission uniformity in non-polar GaN for applications in light-emitting devices as well as power electronics. 
Type Of Material Database/Collection of data 
Year Produced 2020 
Provided To Others? Yes  
URL https://pureportal.strath.ac.uk/en/datasets/feded221-778b-4eae-8cf3-5322a3aec763
 
Title Dataset for: "Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN" 
Description This dataset provides the experimental data used to generate figure 3 in the paper entitled "Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN". The cathodoluminescence (CL) data discussed and presented in the paper was recorded using a variable pressure field emission scanning electron microscope (SEM, FEI Quanta 250) which is equipped with a custom-built CL hyperspectral imaging system. The CL system collects the emitted light at an angle of 45° with respect to the incident electron beam using a Cassegrain reflecting objective. The light is then dispersed using a 125 mm focal length spectrograph (Oriel MS125) and detected using an electron-multiplying charge-coupled device (Andor Newton). As the electron beam scans across the sample surface, a whole CL spectrum is recorded per pixel building up the 3D hyperspectral data set. 2D CL images can then be extracted from the hyperspectral data set, such as peak energy, intensity or half width. Abstract of the paper: A novel overgrowth approach has been developed in order to create a multiple-facet structure consisting of only non-polar and semi-polar GaN facets without involving any c-plane facets, allowing the major drawbacks of utilising c-plane GaN for the growth of III-nitride optoelectronics to be eliminated. Such a multiple-facet structure can be achieved by means of overgrowth on nonpolar GaN micro-rod arrays on r-plane sapphire. InGaN multiple quantum wells (MQWs) are then grown on the multiple-facet templates. Due to the different efficiencies of indium incorporation on non-polar and semi-polar GaN facets, multiple-colour InGaN/GaN MQWs have been obtained. Photoluminescence (PL) measurements have demonstrated that the multiple-colour emissions with a tunable intensity ratio of different wavelength emissions can be achieved simply through controlling the overgrowth conditions. Detailed cathodoluminescence measurements and excitationpower dependent PL measurements have been performed, further validating the approach of employing the multiple facet templates for the growth of multiple colour InGaN/GaN MQWs. It is worth highlighting that the approach potentially paves the way for the growth of monolithic phosphor-free white emitters in the future. Data available on publication of related research output 
Type Of Material Database/Collection of data 
Year Produced 2018 
Provided To Others? Yes  
 
Description A MOU was signed between the Unversity of Sheffield and Universiti Sains Malaysia in order to initiate A Networking On Nitrides Semiconductor Optoelectronics And Electronics 
Organisation University of Science Malaysia
Country Malaysia 
Sector Academic/University 
PI Contribution The Sheffield GaN center led by Professor Tao Wang has established an internationally recognized reputation in the field of III-nitride opto-electronics, ranging from epitaxial growth, through material characterization to device fabrication.
Collaborator Contribution The team at Universiti Sains Malaysia has good experience in technology commercializing. Therefore, both team aims at enhancing academic exchange and cooperation in this field
Impact The MOU was just signed several weeks ago. Hopefully, we will have results soon
Start Year 2019
 
Title DBR Enhanced micro-LEDs 
Description DBR Enhanced micro-LEDs 
IP Reference UK Patent Application No. 1910352.2, 
Protection Patent application published
Year Protection Granted 2019
Licensed Commercial In Confidence
Impact Awaiting impact
 
Title Non-Polar GaN 
Description A new method for the growth of Non-Polar GaN on foreign substrates 
IP Reference GB1807486.4 
Protection Patent application published
Year Protection Granted 2018
Licensed No
Impact Major impact on high frequency and high temperature power and RF electronics
 
Title multiple-colored Micro-LEDs 
Description multiple-colored Micro-LEDs 
IP Reference UK Patent Application No. 1910348.0, 19th July 2019 
Protection Patent application published
Year Protection Granted 2019
Licensed Commercial In Confidence
Impact awaiting impact
 
Company Name EPIPIX LIMITED 
Description Dedicate to manufacturing III-nitride opto-electronics 
Year Established 2020 
Impact This spinout is just established a few weeks ago. It is expected to have a major impact in a wide range of industrial field, such as display, AI, communications, etc
 
Description 2020 Industrial open day 
Form Of Engagement Activity A formal working group, expert panel or dialogue
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Industry/Business
Results and Impact It aims to establish new collaboration with industry and further strengthen existing collaboration with industry, and to support the UK advanced manufacturing.
Year(s) Of Engagement Activity 2020
 
Description JB: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact Poster presentation outlined the latest progress that we have achieved. This results generates a new direction for using GaN semipolar opto-electronics. It is expected to draw strong attention from industry and academic areas
Year(s) Of Engagement Activity 2017
 
Description LJ: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact The presentation reported out latest results on significantly improving crystal quality of our nonpolar GaN on sapphire. This generic approach can be used for a wide range of applications from photonics to electronics and also in a wide spectral region including UV devices. It is expected to draw strong attention from industry and academic areas
Year(s) Of Engagement Activity 2017
 
Description NP: 12th international conference on nitride semiconductors 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact The presentation report on design and then fabrication of single chip white LEDs. The results provided a new direction to move forward developing a new prototype white LED. It is expected to draw strong attention from industry.
Year(s) Of Engagement Activity 2017
 
Description NP: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact The presentation reported our new progress on developing a single chip with multiple colors for a white LEDs using our semi-polar GaN templates. This represents a new advantages of employing semi-polar GaN for the fabrication of a single chip devices with multiple colors for ultra-fast Li-Fi applications.
Year(s) Of Engagement Activity 2017
 
Description SJ: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Postgraduate students
Results and Impact The presentation reported out latest results on developing a new method to achieve GaN power electronics approaching its intrinsic limits. It is expected to draw strong attention from industry and academic areas
Year(s) Of Engagement Activity 2020
 
Description SS: The 3rd international workshop on UV materials and devices (IWUMD-2018), Kunming, China, December 9-12, 2018 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Postgraduate students
Results and Impact Present latest results on developing non-polar (11-20) GaN on patterned silicon substrates for UV applications
Year(s) Of Engagement Activity 2018
 
Description TW: 2017 industrial event/open day 
Form Of Engagement Activity A formal working group, expert panel or dialogue
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact The event has attracted more than 10 CEOs from the UK industrial companies. All the new technological breakthroughs developed through the projects have been presented. It is expected that it will make major impact on industry.
Year(s) Of Engagement Activity 2017
 
Description TW: 2019 Industrial open day 
Form Of Engagement Activity A formal working group, expert panel or dialogue
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Industry/Business
Results and Impact It aims to establish new collaboration with industry and further strengthen existing collaboration with industry, and to support the UK advanced manufacturing.
Year(s) Of Engagement Activity 2019
 
Description XY: 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, USA, 7th-12th July 2019 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Other audiences
Results and Impact The presentation report on design and then fabrication of Semi-Polar (11-22) GaN for Green Emitters on Si Substrates. It is expected to draw strong attention from industry.
Year(s) Of Engagement Activity 2019
 
Description YC: 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, USA, 7th-12th July 2019 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Other audiences
Results and Impact The presentation reports design and then fabrication of Monolithic On-Chip Integration of HEMTs/Green LEDs. The results provided a new direction to move forward developing a new prototype optoelectronics. It is expected to draw strong attention from industry.
Year(s) Of Engagement Activity 2019
 
Description YC: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Postgraduate students
Results and Impact The presentation reported out latest results on developing Superior performance metal-semiconductor-metal photodiode on non-polar (11-20) GaN with patterned (110) silicon. It is expected to draw strong attention from industry and academic areas
Year(s) Of Engagement Activity 2020
 
Description YL: The 3rd international workshop on UV materials and devices (IWUMD-2018), Kunming, China, December 9-12, 2018 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Postgraduate students
Results and Impact Present latest report on developing deep UV AlGaN quantum well structures with high performance grown on novel porous AlN buffer templates
Year(s) Of Engagement Activity 2018
 
Description YNH: UKNC Annual Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact The presentation reported our latest report on the fabrication of GaN based nanoporous structures. This results can be extended to many other areas in addition to solar hydrogen generation, such as nanolasers with a DBR structure in order to enhance optical confinement factor. It is expected to draw strong attention from industry.
Year(s) Of Engagement Activity 2017
 
Description YPG: 2018 UKNC winter Conference 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact The presentations reported a new prototype of white LEDs using our patterned non-polar GaN. It is expected that this type of white LEDs will draw attention from both industry and academia.
Year(s) Of Engagement Activity 2018
 
Description YZ: 12th international conference on nitride semiconductors 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact The presentation reported on our new progress on developing semipolar GaN on patterned substrates. This approach is generic, and can be used for a wide range of applications including LEDs and LDs and also nanodevices such as nanolasers. It is expected to draw strong attention from industry.
Year(s) Of Engagement Activity 2017