Beyond Blue: New Horizons in Nitrides
Lead Research Organisation:
University of Manchester
Department Name: Physics and Astronomy
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
Publications
Barrett R
(2021)
Effect of Micron-scale Photoluminescence Variation on Droop Measurements in InGaN/GaN Quantum Wells
in Journal of Physics: Conference Series
Binks D
(2022)
Cubic GaN and InGaN/GaN quantum wells
in Applied Physics Reviews
Blenkhorn WE
(2018)
Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures.
in Journal of physics. Condensed matter : an Institute of Physics journal
Christian G
(2018)
Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
in Physical Review B
Christian G
(2018)
Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells.
in Materials (Basel, Switzerland)
Christian G
(2016)
Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells
in physica status solidi c
Church S
(2020)
Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells
in Applied Physics Letters
Church S
(2018)
Effect of stacking faults on the photoluminescence spectrum of zincblende GaN
in Journal of Applied Physics
Church S
(2021)
Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells
in Journal of Physics D: Applied Physics
Church S
(2017)
Photoluminescence studies of cubic GaN epilayers
in physica status solidi (b)
Church S
(2021)
Photoluminescence efficiency of zincblende InGaN/GaN quantum wells
in Journal of Applied Physics
Davies M
(2016)
Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells
in Applied Physics Letters
Dawson P
(2016)
The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells
in Journal of Applied Physics
Dunn A
(2016)
Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy
in physica status solidi c
Hammersley S
(2014)
Carrier distributions in InGaN/GaN light-emitting diodes
in physica status solidi (b)
Hammersley S
(2015)
Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
in Applied Physics Letters
Hammersley S
(2016)
Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures
in physica status solidi c
Hammersley S
(2016)
Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs
in physica status solidi c
Hibberd M
(2016)
Dielectric response of wurtzite gallium nitride in the terahertz frequency range
in Solid State Communications
Humphreys CJ
(2017)
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.
in Ultramicroscopy
Kundys D
(2016)
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a -plane and m -plane GaN substrates
in Science and Technology of Advanced Materials
Massabuau F
(2019)
Optical and structural properties of dislocations in InGaN
in Journal of Applied Physics
Schulz S
(2016)
Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m -plane InGaN/GaN quantum wells
in Applied Physics Letters
| Description | Droop in the efficiency of Nitride LEDs is one of the factors limiting their widespread deployment. We have found that droop occurs in bothy polar and nonpolar quantum well yielding important information non the underlying physics. More recent work on droop has revealed the role of excited localised states. Preliminary work on cubic GaN has shown great promise. We have been awarded a 3 year EPSRC grant to extend the work on cubic material. We have found that there is significant micron-scale variation in the emission efficiency across the QW, and that correlation of the properties of the emission (i.e. peak energy and intensity) are different in green emitting and blue emitting samples, indicating that different recombination mechanisms dominate. This has initiated a PhD project to explore this phenomenon which will try and relate this behaviour to differences in the microstructure. |
| Exploitation Route | This work will help with the understanding of efficiency droop in LEDs. The development of cubic GaN could lead to a new generation of LED materials |
| Sectors | Digital/Communication/Information Technologies (including Software),Electronics,Energy |
| Description | Several grant proposals were made to EPSRC, including two Program grant proposals, a proposal for an Industrial Hub and a responsive mode application. The latter was successful. |
| First Year Of Impact | 2016 |
| Sector | Digital/Communication/Information Technologies (including Software),Electronics,Energy,Healthcare |
| Impact Types | Societal |
| Description | EPSRC Responsive mode |
| Amount | £495,375 (GBP) |
| Funding ID | EP/R010250/1 |
| Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
| Sector | Public |
| Country | United Kingdom |
| Start | 02/2018 |
| End | 12/2020 |
| Title | Research data supporting "Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence" |
| Description | Research data in support of the publication "Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence". We have included the original data (tab-separated text files) as plotted for the quantum wells, measured by spatially- and time-resolved cathodoluminescence. |
| Type Of Material | Database/Collection of data |
| Year Produced | 2016 |
| Provided To Others? | Yes |
| Description | Collaboration with Tyndall Insitute |
| Organisation | University College Cork |
| Department | Tyndall National Institute |
| Country | Ireland |
| Sector | Academic/University |
| PI Contribution | Input to theory work done at Tyndall Institute |
| Collaborator Contribution | Theoretical input to program |
| Impact | Significant number of papers |
| Start Year | 2009 |
| Description | Cubic GaN |
| Organisation | Anvil Semiconductors |
| Country | United Kingdom |
| Sector | Private |
| PI Contribution | This work is part of a joint program of work between us, the University of Cambridge and Anvil Semiconductors |
| Collaborator Contribution | Anvil Semiconductors provide the substrate materials for our program on cubic GaN |
| Impact | EPSRC responsive mode grant proposal that commenced Feb 2018 |
| Start Year | 2016 |
| Description | Exhibit at Blue Dot |
| Form Of Engagement Activity | A talk or presentation |
| Part Of Official Scheme? | No |
| Geographic Reach | National |
| Primary Audience | Public/other audiences |
| Results and Impact | Exhibit at Blue Dot of LED lighting science, Blue Dot is a major science festival held at Jodrell Bank. |
| Year(s) Of Engagement Activity | 2016 |
| Description | University of the 3rd Age |
| Form Of Engagement Activity | A talk or presentation |
| Part Of Official Scheme? | No |
| Geographic Reach | Regional |
| Primary Audience | Public/other audiences |
| Results and Impact | Talk to organisation that provides forum for people in retirement to hear about scientific developments |
| Year(s) Of Engagement Activity | 2016 |