Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates

Lead Research Organisation: University of Glasgow
Department Name: School of Engineering

Abstract

Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.

Publications

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Eblabla A (2017) Low-Loss MMICs Viable Transmission Media for GaN-on-Low Resistivity Silicon Technology in IEEE Microwave and Wireless Components Letters

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Eblabla A (2016) GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology in IEEE Transactions on Terahertz Science and Technology

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Eblabla A (2018) High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications in IEEE Microwave and Wireless Components Letters

 
Description developing the UK GaN MMIC technology for industry use
First Year Of Impact 2019
Sector Aerospace, Defence and Marine,Agriculture, Food and Drink,Digital/Communication/Information Technologies (including Software),Electronics,Healthcare
Impact Types Economic

 
Description A Feasibility Study for the Development of GaN - based High Frequency RF Devices
Amount £148,843 (GBP)
Funding ID 103440 
Organisation Innovate UK 
Sector Public
Country United Kingdom
Start 10/2017 
End 09/2018
 
Description Advancement of back-side processes for mm-wave integrated circuits
Amount £6,624,358 (GBP)
Funding ID 2433425 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 10/2020 
End 09/2024
 
Description EPSRC Centre for Doctoral Training in Compound Semiconductor Manufacturing
Amount £6,624,358 (GBP)
Funding ID EP/S024441/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 06/2019 
End 12/2027
 
Description Future Compound Semiconductor Manufacturing Hub
Amount £10,852,672 (GBP)
Funding ID EP/P006973/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 10/2016 
End 09/2024
 
Description Short-gate GaN HEMTs for mm-wave integrated circuits
Amount £6,624,358 (GBP)
Funding ID 2429191 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 10/2020 
End 09/2024
 
Description GaNforCS 
Organisation Leonardo MW Ltd.
Country United Kingdom 
Sector Private 
PI Contribution Develop a full mask layout for MMIC based PDK
Collaborator Contribution Advising and studentship
Impact GaN on SiC MMIC Technology
Start Year 2019
 
Description GaNforCs 
Organisation Compound Semiconductor Applications Catapult
Country United Kingdom 
Sector Private 
PI Contribution advising and studentship
Collaborator Contribution advising and studentship
Impact Developing GaN technology passives for MMIC application
Start Year 2019
 
Description EuMC2016 Workshop - EPSRC Projects in Microwave, Millimetre-Wave and THz Research - Presentation on Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates 
Form Of Engagement Activity A formal working group, expert panel or dialogue
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact "The Engineering and Physical Sciences Research Council (EPSRC) is the UK's main agency for funding research in engineering and the physical sciences. EPSRC invests around £800 million a year in research and postgraduate training, to help the nation handle the next generation of technological change." For several years EPSRC has designated RF and Microwave Devices and RF and Microwave Communications as growth areas, and this policy is manifested in a current portfolio of grants in these areas totaling over £30M. In this workshop, the strategic direction, ambition and vision of EPSRC for RF and Microwave research will be presented and discussed, and a series of talks showcasing a cross section of current EPSRC funded projects will be given.
Year(s) Of Engagement Activity 2016
URL http://www.eumweek.com/docs/workshops/WF12Abs&Sched.pdf
 
Description International Workshop on Nitride Semiconductors (IWN 2016) - Chairing a Technical Session, C2.3: Power Devices III: Devices for Power Electronics III Session Chairs: Khaled Elgaid and Robert Co e Thursday Afternoon, October 6, 2016 
Form Of Engagement Activity A formal working group, expert panel or dialogue
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Chairing a Technical Session - C2.3: Power Devices III: Devices for Power Electronics III Session Chairs: Khaled Elgaid and Robert Co e Thursday Afternoon, October 6, 2016
Room: Narcissus/Orange Blossom
Year(s) Of Engagement Activity 2016
URL https://www.mrs.org/iwn-2016
 
Description International Workshop on Nitride Semiconductors (IWN 2016), Presenting GaN Research Activities - MMIC-Compatible Microstrip Technology for GaN-HEMTs on Low Resistivity Silicon Substrate Khaled Elgaid1, Abdalla M. Eblabla1, Bhavana Benakaprasad1, Xu Li1, Iain Thayne1, David Wallis 2, Ivor Guiney2 and Colin Humphreys2; 1Electronic and Nanoscale Engineering, University of Glasgow, Glasgow, United Kingdom; 2Centre for GaN, University of Cambridge, Cambridge, United Kingdom. 
Form Of Engagement Activity A formal working group, expert panel or dialogue
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact International Workshop on Nitride Semiconductors (IWN 2016), October 2-7, 2016, Orlando, Florida
The International Workshop on Nitride Semiconductors is a premier biennial-held meeting covering all aspects of III-Nitride Semiconductor science, engineering and industry. Historically populated by nearly a thousand international participants, the meeting accommodates joint and multiple parallel sessions spanning materials, optoelectronic devices, electronic devices, new advances and theory.
Year(s) Of Engagement Activity 2016
URL https://www.mrs.org/iwn-2016
 
Description Invited Speaker at IEEE Ottawa Section, IEEE Ottawa Technical Seminar at University of Ottawa, Canada, October 31, 2016. 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Invited Speaker, presentation title "RF GaN-on-LR Si Monolithic Integrated Circuits Technology", at IEEE Ottawa Section, IEEE Ottawa Technical Seminar at University of Ottawa, Canada, October 31, 2016.
Year(s) Of Engagement Activity 2016
 
Description Keynote Presentations at "IET Colloquium on Millimetre-wave and Terahertz Engineering & Technology", Glasgow, United Kingdom, 30 March 2017. 
Form Of Engagement Activity Participation in an activity, workshop or similar
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Keynote Speaker, title "Microwave and THz Technology Development at Glasgow University" at "IET Colloquium on Millimetre-wave and Terahertz Engineering & Technology", Glasgow, United Kingdom, 30 March 2017.
Year(s) Of Engagement Activity 2017
 
Description Microwave and Millimeter-wave GaN - Wafer to IC Workshop 
Form Of Engagement Activity A formal working group, expert panel or dialogue
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Industry/Business
Results and Impact The Centre for High Frequency Engineering at Cardiff University invites researchers and industry to attend the scheduled Microwave and Millimeter-wave GaN - Wafer to IC workshop on 25th April 2018 at Cardiff University. The aim of the workshop is to present up to date Microwave and Millimeter-wave GaN technology development and discusses its future potential in the area of 5G, space and security.
Year(s) Of Engagement Activity 2018
URL https://www.cardiff.ac.uk/events/view/microwave-and-millimeter-wave-gan-wafer-to-ic-workshop
 
Description The European Space Agency (ESA) 8th Wide Bandgap Semiconductor and Components Workshop 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Industry/Business
Results and Impact The European Space Agency (ESA), CNES, EDA and the DGA are jointly organising the 8th Wide Bandgap Semiconductor and Components workshop to promote and facilitate information exchange on wide bandgap technologies for microwave, power switching, sensor and other emerging space/defence applications. This will be a 2 day event, to be held at ESA's newest establishment ECSAT, Harwell, UK, on the 12th and 13th of September 2016.
An important objective is to facilitate information exchange between aerospace, defence, Space Agency and EU funded research programmes in order to enhance visibility on latest developments, allowing for a proper coordination that ensures a rapid transition of the technology into manufacturing industry. To do so, an open discussion session is planned in which attendee viewpoints will be gathered in order to identify key problem areas and to help coordinate and plan future research and development work programmes.
Year(s) Of Engagement Activity 2016
URL http://esaconferencebureau.com/2016-events/16c14/objectives
 
Description Workshop; THz Electronics Technology for Communications and Sensing, 47th European Microwave Week. 
Form Of Engagement Activity Participation in an activity, workshop or similar
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Presentation title - "THz-MICs interconnect and integrated antenna technology on GaN on low-resistivity silicon substrates", at a workshop "THz Electronics Technology for Communications and Sensing", 47th European Microwave Week (EuMW), Nuremberg, Germany, 8 - 12 October 2017.
Year(s) Of Engagement Activity 2017
URL http://www.eumweek.com/docs/2577_eumw2017_conf_prog_MAIN_FINAL_v2.pdf