Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
Lead Research Organisation:
University of Sheffield
Department Name: Electronic and Electrical Engineering
Abstract
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Organisations
Publications
Alt A
(2019)
Analysis of Gain Variation With Changing Supply Voltages in GaN HEMTs for Envelope Tracking Power Amplifiers
in IEEE Transactions on Microwave Theory and Techniques
Jiang S
(2020)
A 624 V 5 A All-GaN Integrated Cascode for Power-Switching Applications
in physica status solidi (a)
Jiang S
(2019)
Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors
in IEEE Transactions on Electron Devices
Pinchbeck J
(2020)
Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects
in Journal of Physics D: Applied Physics
Wohlfahrt M
(2021)
Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks
in Applied Physics Letters
Yin Y
(2022)
High-Performance Enhancement-Mode p -Channel GaN MISFETs With Steep Subthreshold Swing
in IEEE Electron Device Letters
| Description | Next generation 5G wireless communication systems promise gigabits per second data transmission rate, multiple-channel/devices connections and improved coverage. The success of the 5G evolution relies on solving challenging base-station infrastructure hardware problems especially power consumption and cost. Radio frequency power amplifiers, the backbone components in the transmitter infrastructure, can consume up to 60% of the total energy in the base-station due to inefficiency of the existing power amplifiers with a fixed supply voltage. The efficiency of the amplifiers can be improved by having the supply voltage dynamically changes with radio-frequency signals. This project aims to realise high speed/frequency and high efficiency power amplifiers which integrated with variable-voltage supplies (in a single chip) using high efficiency gallium nitride semiconductor devices for the 5G communication systems. Bringing together expertise on radio-frequency (University of Cardiff), power electronics (University of Manchester) and semiconductor device/circuit design and fabrication (University of Sheffield), we have fabricated and demonstrated an integrated solution of the voltage supplies using gallium nitride on silicon substrates which is suitable for low-cost mass-productions. In addition, significant understanding on the design of the high efficiency and high frequency solid-state voltage supplies and semiconductor devices for power amplifiers has been developed and have been disseminated to the radio-frequency and power electronics communities. |
| Exploitation Route | Working with UK radio-frequency amplifiers and power electronic transistor manufacturers to validate the design concepts and manufacturing techniques developed for mass productions. |
| Sectors | Digital/Communication/Information Technologies (including Software),Electronics,Manufacturing, including Industrial Biotechology |