Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
Lead Research Organisation:
University of Cambridge
Department Name: Materials Science & Metallurgy
Abstract
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Organisations
Publications
Cheng X
(2023)
Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers
in ACS Photonics
Guilhabert B
(2022)
Advanced transfer printing with in-situ optical monitoring for the integration of micron-scale devices
in IEEE Journal of Selected Topics in Quantum Electronics
Loeto K
(2023)
Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence
in physica status solidi (a)
Ghosh S
(2023)
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD
in Semiconductor Science and Technology
Wessling N
(2022)
Fabrication and transfer printing based integration of free-standing GaN membrane micro-lenses onto semiconductor chips
in Optical Materials Express
Spiridon B
(2021)
Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis
in Optical Materials Express
Griffiths J
(2016)
Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold
in Journal of Applied Physics
Tang F
(2018)
Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors
in Journal of Applied Physics
Ghosh S
(2021)
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon.
in ACS applied electronic materials
Church S
(2017)
Photoluminescence studies of cubic GaN epilayers
in physica status solidi (b)
Choi F
(2018)
Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
in Journal of Applied Physics
| Description | The work on the growth of nitride high electron mobility transistors on silicon during this award has greatly enhanced our understanding of the mechanisms controlling strain in such devices. This will help us, in future, to develop growth methods which allow the wafer to remain flat (which is important for wafer processing) whilst growing thick layers which tend to introduce strain into the system and bow it into a non-flat shape. We have also increased understanding of the mechanisms which control the film and the substrate conductivity post-growth, which is vital to aid understanding of the device electrical performance. |
| Exploitation Route | The robust growth methods we are developing may be adopted by our industrial partners for commercial devices. Materials grown by these methods are also broadly available to the UK community via the EPSRC National Epitaxy Facility. |
| Sectors | Digital/Communication/Information Technologies (including Software),Electronics |
| Description | DCMS: Compound Semiconductors: Industry & Academia Roundtable |
| Geographic Reach | National |
| Policy Influence Type | Participation in a guidance/advisory committee |
| Description | EPSRC/Innovate UK Semiconductor Roundtable |
| Geographic Reach | National |
| Policy Influence Type | Contribution to a national consultation/review |
| Description | FCDO UK Semiconductor Sector Visit to Washington DC |
| Geographic Reach | Multiple continents/international |
| Policy Influence Type | Contribution to a national consultation/review |
| Description | Institute of Physics / Royal Academy of Engineering Roundtable: UK Semiconductor Challenges and Solutions |
| Geographic Reach | National |
| Policy Influence Type | Contribution to a national consultation/review |
| URL | https://raeng.org.uk/media/2hmbvzke/0402_semi-conductor-report_v2.pdf |
| Description | Royal Academy of Engineering: Exploring the UK semiconductor innovation system workshop |
| Geographic Reach | National |
| Policy Influence Type | Contribution to a national consultation/review |
| URL | https://raeng.org.uk/media/rm1hck2o/raeng-exploring-the-uk-semiconductor-innovation-system.pdf |
| Description | A National Research Facility for Epitaxy |
| Amount | £12,250,478 (GBP) |
| Funding ID | EP/X015300/1 |
| Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
| Sector | Public |
| Country | United Kingdom |
| Start | 06/2022 |
| End | 06/2027 |