Realising a solid state photomultiplier and infrared detectors through Bismide containing semiconductors
Lead Research Organisation:
University of Surrey
Department Name: ATI Physics
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
Publications
Sharpe M
(2019)
A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques
in Journal of Applied Physics
Yavari M
(2021)
A synergistic Cs 2 CO 3 ETL treatment to incorporate Cs cation into perovskite solar cells via two-step scalable fabrication
in Journal of Materials Chemistry C
Fitch C
(2022)
Carrier Recombination Properties of Low-Threshold 1.3 µm Quantum Dot Lasers on Silicon
in IEEE Journal of Selected Topics in Quantum Electronics
Webb T
(2021)
Device Architecture Engineering: Progress toward Next Generation Perovskite Solar Cells
in Advanced Functional Materials
Lim L
(2020)
Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications
in Semiconductor Science and Technology
Broderick C
(2016)
GaAs-based dilute bismide semiconductor lasers: Theory vs. experiment
Broderick CA
(2017)
GaAs1-xBix/GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics.
in Scientific reports
Bushell Z
(2019)
Giant bowing of the band gap and spin-orbit splitting energy in GaP1-xBix dilute bismide alloys
in Scientific Reports
Bushell Z
(2017)
High-Q photonic crystal cavities in all-semiconductor photonic crystal heterostructures
in Physical Review B
| Description | This project led to an improved understanding of the growth of new types of compound semiconductor containing bismuth. These semiconductors are of growing interest owing to their applications in higher efficiency lasers, photodetectors and photovoltaics. |
| Exploitation Route | The outputs will be used to help develop improved quality semiconductor materials for use in photonic and electronic device applications. |
| Sectors | Aerospace, Defence and Marine,Chemicals,Digital/Communication/Information Technologies (including Software),Energy |
| Description | The work has led to further investigations and developments of the applications of photonic devices. It has contributed to one new industrial project which aims to exploit some of the knowledge gained on active region design. The project also helped establish a number of new characterisation capabilities. These have been used broadly across a range of projects (see breadth of publications list) and have also stimulated new short-term industrial projects which utilise the characterisation capabilites. |
| Sector | Digital/Communication/Information Technologies (including Software),Electronics,Energy |
| Impact Types | Economic |
| Title | Quantifying Auger recombination coefficients in type-I mid-infrared InGaAsSb quantum well lasers |
| Description | From a systematic study of the threshold current density as a function of temperature and hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold carrier density, we have determined the wavelength dependence of the Auger recombination coefficients in InGaAsSb/GaSb quantum well lasers emitting in the 1.7-3.2 µm wavelength range. From hydrostatic pressure measurements, the non-radiative component of threshold currents for individual lasers was determined continuously as a function of wavelength. The results are analysed to determine the Auger coefficients quantitatively. This procedure involves calculating the threshold carrier density based on device properties, optical losses, and estimated Auger contribution to the total threshold current density. A strong increase with decreasing mid-infrared wavelength (< 2 µm) indicates the prominent role of intervalence Auger transitions to the split-off hole band. Above 2 µm, the increase with wavelength is approximately exponential due to CHCC or CHLH Auger recombination. The observed dependence is consistent with that derived by analysing literature values of lasing thresholds for type-I InGaAsSb quantum well diodes. Over the wavelength range considered, the Auger coefficient varies from a minimum of 1x10 -16cm 4s -1 at 2.1µm to ~8x10 -16cm 4s -1 at 3.2µm. |
| Type Of Material | Database/Collection of data |
| Year Produced | 2020 |
| Provided To Others? | Yes |
| URL | https://zenodo.org/record/3907415 |
| Title | Quantifying Auger recombination coefficients in type-I mid-infrared InGaAsSb quantum well lasers |
| Description | From a systematic study of the threshold current density as a function of temperature and hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold carrier density, we have determined the wavelength dependence of the Auger recombination coefficients in InGaAsSb/GaSb quantum well lasers emitting in the 1.7-3.2 µm wavelength range. From hydrostatic pressure measurements, the non-radiative component of threshold currents for individual lasers was determined continuously as a function of wavelength. The results are analysed to determine the Auger coefficients quantitatively. This procedure involves calculating the threshold carrier density based on device properties, optical losses, and estimated Auger contribution to the total threshold current density. A strong increase with decreasing mid-infrared wavelength (< 2 µm) indicates the prominent role of intervalence Auger transitions to the split-off hole band. Above 2 µm, the increase with wavelength is approximately exponential due to CHCC or CHLH Auger recombination. The observed dependence is consistent with that derived by analysing literature values of lasing thresholds for type-I InGaAsSb quantum well diodes. Over the wavelength range considered, the Auger coefficient varies from a minimum of 1x10 -16cm 4s -1 at 2.1µm to ~8x10 -16cm 4s -1 at 3.2µm. |
| Type Of Material | Database/Collection of data |
| Year Produced | 2020 |
| Provided To Others? | Yes |
| URL | https://zenodo.org/record/3907414 |
| Description | Kyoto Institute of Technology |
| Organisation | Kyoto Institute of Technology |
| Country | Japan |
| Sector | Academic/University |
| PI Contribution | The project aimed to develop new bismuth-containing alloys for the development of photodetectors. This led to the PI developing further international collaborations to explore the opportunities for such materials in other photonic devices including photovoltaics. As part of this, the PI established a new collaboration with Professor Yoshimoto's group at Kyoto Institute of Technology in Japan. The PI was successful in obtaining JSPS funding to spend a 3 month period in Kyoto to further explore the opportunities. |
| Collaborator Contribution | The partners in Kyoto have contributed in our understanding of new classes of semconductors including bismuth and nitrogen. We have worked together to develop this material and expect the first publications to arise from this soon. As part of this, Kyoto Institute of Technology hosted the PI's 3 month stay in Japan and also successfully appleid for EU funding to support work at the Ion-Beam Centre at the University of Surrey. |
| Impact | JSPS International Invitational Fellowship (for the PI) Joint conference presentations at the international Mid-infrared Optoelectronic Materials and Devices (MIOMD) conference (2021). RADIATE project for collaboration between KIT and Surrey |
| Start Year | 2019 |
| Title | Light Emitting Semiconductor Device |
| Description | This patent concerns the use of bismuth containing alloys to produce high efficiency photonic devices. |
| IP Reference | US20120168816 |
| Protection | Patent application published |
| Year Protection Granted | |
| Licensed | Commercial In Confidence |
| Impact | This work has spawned a field of research and development in new materials for photonic devices. The applications include telecommunications and sensing. |
| Title | Light Receiving Device |
| Description | This patent application concerns the use of novel III-V alloys for use in the development of high efficiency solar cells. |
| IP Reference | US20160149060 |
| Protection | Patent application published |
| Year Protection Granted | |
| Licensed | No |
| Impact | This IP has led to research into new approaches for solar cell design and helped to stimulate a new research topic on photodetectors. |