Development of second generation 3D silicon detectors for future upgrades at the Large Hadron Collider.
Lead Research Organisation:
University of Manchester
Department Name: Physics and Astronomy
Abstract
3D silicon detectors use the latest technology for applications in particle physics. The UK leads the world in the development of this technology. They are also being developed for medical and biological imaging as they can significantly improve currently available systems. They combine silicon micromachining with traditional Very Large Scale Integration (VLSI) planar processing on high resistivity silicon to produce sensors with unique properties. These include the world record for survival in a radiation environment and very fast signals. They can also operate to within a hairs breadth of their edge, which allows one to tile them into a larger array with almost no loss of image quality. They have the potential for use in many areas of science and also in homeland security. This project will produce the second generation of this technology which will improve their characteristics and open up new areas of application.
Publications
Da ViÀ C
(2009)
3D Active Edge Silicon Detector Tests With 120 GeV Muons
in IEEE Transactions on Nuclear Science
Da Viá C
(2009)
3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance
in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Da Vià C
(2013)
3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production
in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Da Via C
(2012)
3D silicon sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade
in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
La Rosa A
(2012)
Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK
in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Da Via C
(2008)
Dual readout-strip/pixel systems
in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Parker S
(2008)
Dual readout: 3D direct/induced-signals pixel systems
in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Hansen T
(2009)
First fabrication of full 3D-detectors at SINTEF
in Journal of Instrumentation
Da Viá C
(2008)
Radiation hardness properties of full-3D active edge silicon sensors
in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Betta G
(2012)
Recent developments and future perspectives in 3D silicon radiation sensors
in Journal of Instrumentation
| Description | The technology used to develop 3D sensors can be used for developing vertically integrated micro-structures useful for low mass, radiation hard detector systems. Such systems can find applications in high energy physics and other fields. |
| Exploitation Route | microdosimetry for hadrontherapy. Microchannels for cooling management. aggressive vertically integrated systems for portable environmental detectors. |
| Sectors | Environment,Healthcare |
| Description | 3D pixel detectors have been used for the first time in the ATLAS experiment (Insertable B-layer). Their radiation hardness and geometrical properties are now being studied for medical and environmental dosimetry |
| First Year Of Impact | 2012 |
| Sector | Environment,Healthcare,Other |
| Impact Types | Societal |
| Description | ATLAS UPGRADE |
| Amount | £13,970,000 (GBP) |
| Organisation | Science and Technologies Facilities Council (STFC) |
| Sector | Public |
| Country | United Kingdom |
| Start | 04/2010 |
| End | 03/2013 |
| Description | 3DATLAS R&D Collaboration |
| Organisation | National Institute for Nuclear Physics |
| Department | National Institute for Nuclear Physics - Trento |
| Country | Italy |
| Sector | Academic/University |
| PI Contribution | Access to research material, contribution to data taking, analysis and simulations |
| Collaborator Contribution | irradiation, test and analysis of devices |
| Impact | qualification of research devices for LHC experiment upgrade |
| Start Year | 2007 |
| Description | 3DATLAS R&D Collaboration |
| Organisation | Stanford University |
| Department | Department of Physics |
| Country | United States |
| Sector | Academic/University |
| PI Contribution | Access to research material, contribution to data taking, analysis and simulations |
| Collaborator Contribution | irradiation, test and analysis of devices |
| Impact | qualification of research devices for LHC experiment upgrade |
| Start Year | 2007 |
| Description | ATLAS INSERTABLE B-LAYER (IBL) |
| Organisation | National Institute for Nuclear Physics |
| Department | National Institute for Nuclear Physics - Genova |
| Country | Italy |
| Sector | Academic/University |
| PI Contribution | design, fabrication and testing of 3D sensors compatible with the ATLAS pixel readout electronics. |
| Collaborator Contribution | Bump-bonding, mounting and characterization of devices |
| Impact | 3D is one of the sensors currently being evaluated for the IBL |
| Start Year | 2009 |
| Description | ATLAS INSERTABLE B-LAYER (IBL) |
| Organisation | University of Oslo |
| Department | Department of Physics |
| Country | Norway |
| Sector | Academic/University |
| PI Contribution | design, fabrication and testing of 3D sensors compatible with the ATLAS pixel readout electronics. |
| Collaborator Contribution | Bump-bonding, mounting and characterization of devices |
| Impact | 3D is one of the sensors currently being evaluated for the IBL |
| Start Year | 2009 |
| Title | 3D sensors |
| Description | Etched electrode are processed inside the silicon bulk rather than onthe wafer surface. Active edges are fabricated etching trenches around the sensor perimeter reducing the sensor dead area to few microns. This can be used to cover large sensing areas. Radiation hard detectors |
| Type Of Technology | Detection Devices |
| Impact | 3D technlogy was selected for the very first upgrade of the ATLAS experiment (IBL) to improve vertex reconstruction and b-tagging. It is the radiation hardest sensor ever fabricated and has potential spinoffs in medical, syncrotron and neutron imaging, |