Radioisotope Microbatteries
Lead Research Organisation:
University of Sussex
Department Name: Sch of Engineering and Informatics
Abstract
The ability to supply small amounts of power over long periods of time is becoming increasingly important in many applications including: microelectromechanical system technologies; implantable medical devices such as neurostimulators e.g. to alleviate the effects of Parkinson's disease or chronic pain; embedded electronics and sensors; as well as various defence and security applications. The core aim of this proposal is to produce a commercially viable robust, miniature and high-efficiency radioisotope microbattery for microelectronics to be deployed in inaccessible or hostile environments.
Publications
Butera S
(2018)
Temperature characterisation of spectroscopic InGaP X-ray photodiodes
in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Butera S
(2018)
6 µ m thick AlInP 55 Fe x-ray photovoltaic and 63 Ni betavoltaic cells
in Semiconductor Science and Technology
Butera S
(2018)
Measurement of the electron-hole pair creation energy in A l 0 . 52 I n 0 . 48 P using X-ray radiation
in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Butera S
(2017)
Investigation of a temperature tolerant InGaP (GaInP) converter layer for a 63 Ni betavoltaic cell
in Journal of Physics D: Applied Physics
Lioliou G
(2017)
High temperature GaAs X-ray detectors
in Journal of Applied Physics
Lioliou G
(2017)
Prototype GaAs X-ray detector and preamplifier electronics for a deep seabed mineral XRF spectrometer
in X-Ray Spectrometry
Lioliou G
(2021)
Performance evaluation of a new 30 µm thick GaAs x-ray detector grown by MBE
in Materials Research Express
Lioliou G
(2018)
GaAs Spectrometer for Planetary Electron Spectroscopy
in Journal of Geophysical Research: Space Physics
Lioliou G
(2022)
Electron-hole pair creation and conversion efficiency in radioisotope microbatteries.
in Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine
Lioliou G
(2021)
X-ray and ? -ray spectroscopy using a 2 × 2 GaAs p + -i-n + diode array
in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
| Description | Radioisotope microbatteries are technologically viable and on the cusp of being commercially viable for many applications. |
| Exploitation Route | Further research; commercialisation |
| Sectors | Aerospace, Defence and Marine,Electronics,Energy,Security and Diplomacy |
| Description | Radioisotope microbatteries are ready to be developed as commercial propositions for defence, medical, and other applications. The work helped shape strategic direction at a major UK company. |
| First Year Of Impact | 2018 |
| Sector | Aerospace, Defence and Marine,Electronics,Energy,Healthcare,Pharmaceuticals and Medical Biotechnology,Security and Diplomacy |
| Impact Types | Societal,Economic |
| Title | NUCLEAR MICROBATTERY |
| Description | A nuclear microbattery is disclosed comprising: a radioactive material that emits photons or particles; and at least one diode comprising a semiconductor material arranged to receive and absorb photons or particles and generate electrical charge-carriers in response thereto, wherein said semiconductor material is a crystalline lattice structure comprising Aluminium, Indium and Phosphorus. |
| IP Reference | CA3070559 |
| Protection | Patent application published |
| Year Protection Granted | 2019 |
| Licensed | No |
| Impact | Patent applied for in: US, UK, EU, China, India, Russia, and Brazil |
| Title | NUCLEAR MICROBATTERY |
| Description | A nuclear microbattery is disclosed comprising: a radioactive material that emits photons or particles; and at least one diode comprising a semiconductor material arranged to receive and absorb photons or particles and generate electrical charge-carriers in response thereto, wherein said semiconductor material is a crystalline lattice structure comprising Aluminium, Indium and Phosphorus. |
| IP Reference | WO2019016574 |
| Protection | Patent application published |
| Year Protection Granted | 2019 |
| Licensed | No |
| Impact | Patents applied for in: UK, USA, Canada, China, India, Russia |