Development of MEMS RF semiconductor test probe

All semi-condutor devices are tested, while on the wafer, with the use of fine-pitch probe needles to confirm their electrical performance. The needle connects the semiconductor integrated circuit (IC) to a test system via a probe card. The needles need to connect all the inputs and outputs (I/Os) of the IC and are therefore required for DC power, low frequency and high frequency data connections. The 5G, fifth generation, mobile network is under development and will increase the demand on semiconductor testing to frequencies unto 100 GHz. The ICs for 5G systems will required fine-pitched I/Os to allow them to be housed compactly in a phone. This requires fine-pitch high frequency (RF) capable semiconductor probe-needles.
This project will perform the necessary early stage development of a fine-pitch RF probe needle, based on the fine-pitch DC probe needle manufacturing technology developed in an STFC IPS grant, coupled with the expertise the PI has gained in high frequency data transmission from the LHC upgrade projects (ATLAS ITk and LHCb Velo).
The needle will have a finer pitch from the present state-of-the-art RF needles with high performance up to a frequency of 100GHz. This will enable reduced pitch of the I/O pads of the ICs that will underpin 5G telecommunications and allow IC miniaturisation and RF testing during mass production.