Solution based CVD Approach to Metal Sulfide Thin Films

Lead Research Organisation: University College London
Department Name: Chemistry

Abstract

In this project we will develop sustainable routes to thin film metal sulfide materials from novel precursors with equivalent or better figures of merit to existing materials. The films will be developed using a solution based chemical vapour deposition process known as aerosol assisted chemical vapour deposition (AACVD). In AACVD, precursors are transported in the aerosol and the key requirement is for the precursor to be soluble, overcoming the volatility issues with traditional CVD processes. This expands the range of precursors that can be used and the deposition of ternary/quaternary materials can be achieved by using a precursor mix in the aerosol. The rapid processing and simplicity of the AACVD equipment means that modifications to the process at an industrial scale are achievable at low cost, and the process could function in continuous production. This would produce highly functional thin films with no need for further batch post-deposition treatment.

Publications

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Studentship Projects

Project Reference Relationship Related To Start End Student Name
EP/N509577/1 01/10/2016 24/03/2022
1927626 Studentship EP/N509577/1 01/10/2017 30/09/2021 Kristian Mears
 
Description A library of novel gallium and aluminium precursors towards transparent and conductive materials have been synthesised, tackling the current market's use of expensive and/or toxic materials.
Exploitation Route Further probing of the molecular precursors and their chemical properties should be carried out in order to test their merit as precursors or even other uses, such as in catalysis.
Sectors Aerospace, Defence and Marine,Chemicals,Electronics,Energy,Environment,Security and Diplomacy

 
Description Researcher Mobility Grant
Amount £5,000 (GBP)
Funding ID M19-3658 
Organisation Royal Society of Chemistry 
Sector Charity/Non Profit
Country United Kingdom
Start 03/2020 
End 05/2020
 
Description Novel Precursors towards Gallium Tin Oxide 
Organisation University of California, Davis
Department Department of Chemistry
Country United States 
Sector Academic/University 
PI Contribution Abstract of of work to be undertaken: With growing developments in the technology sector requiring more advanced materials, the synthesis of single source precursors (SSPs) provides a convenient method for the deposition of target materials via facile, scalable and economical routes. Recent work has highlighted the use of functionalised-alkoxide ligands around a gallium centre to afford SSPs to transparent conducting films. These ligands offer the ability to 'tune' the properties of the precursor through functionalisation of the coordinating nitrogen group. This tunability combined with well-defined thermolysis routes (e.g. ß-hydride elimination) affords a precursor that is tailored to a specific application, producing the target material easily and efficiently. Gallium tin oxide (GTO) is a material of commercial interest due to its transparency and p-type conductivity. To further functionalise a gallium alkoxide compound, it is possible to incorporate tin to form a SSP. This mixture of metals can complement the desired properties (transparency and conductivity) of the target material. One way of incorporating both metals into an SSP is by using a previously successful bond-insertion technique, using a stannylene-based insertion into a gallium-carbon bond. By combining this heterobimetallic species with functionalised alkoxides, it should be possible to create the first SSP towards GTO material.
Collaborator Contribution Provided lab space, including bench fees.
Impact Work yet to be undertaken.
Start Year 2020