GaO and GaN materials and devices

Lead Research Organisation: University of Bristol
Department Name: Physics

Abstract

Wide bandgap semiconductor materials are transforming how new systems can be designed, namely in their efficiency and frequency. These devices require extensive processing, and in this project we will explore at the new upcoming materials of GaO and the more established material of GaN. We will study the impact of processing on the performance of the devices, and also in general how the device can be optimally designed, and the physics of their working. The project will use internal and external device fabrication tools, as well as electrical testing equipment and device simulation tools.

Publications

10 25 50

Studentship Projects

Project Reference Relationship Related To Start End Student Name
EP/S515310/1 01/10/2018 30/09/2022
2127580 Studentship EP/S515310/1 31/10/2018 30/10/2022 Hannah Morgan-Cooper