Polyoxometalate nanoscale electronic devices

Polyoxometalates (POMs) are solution-processed nanoscale metal oxide molecular clusters, wellknown for their exceptional redox properties, which, combined with their high thermodynamic stability and plethora of nanosized architectures, render them ideal candidates to be incorporated in nanoscale electronic devices, such as molecular junctions and non-volatile memories. POM-based molecular memories utilise only a few electrons in localised redox reactions that induce the resistive switching mechanism at the molecular level, bearing the potential for high-density and multi-bit data storage.
Different types of POM molecules will be investigated in two-terminal coplanar nanogap-separated (<10 nm) electrodes towards development of single-molecule junctions and molecular memory devices. They will be deposited on the pre-patterned metal electrodes using various self-assembly techniques, such as spin-coating, drop casting, Langmuir-Blodgett and layer-by layer self-assembly. The nanoscale films will be characterised with atomic force microscopy and scanning electron microscopy and their DC current-voltage and impedance characteristics will be thoroughly studied to obtain a comprehensive understanding of the operational principle. Their photoredox properties will be also explored via exposure at UV light towards optically controlled memories.
The combination of molecular materials with nanoscale device architectures offers a unique opportunity to boost the capability of advanced molecule-based high-density memory technologies for application in low-power consumer electronics and artificial intelligence.