Electro absorption modulators based on SiGe on insulator

The research topic will be focused on the fabrication of transceivers based on Ge and SiGe on insulator aimed to meet interconnect needs for data centres/HPC requirements.
The work would build up on processes patented in Southampton and a recently demonstrated process enabling the SiGe to be grown on SOI. The process of depositing SiGe is done in collaboration with COMO in Milano (http://lness.como.polimi.it/sige.php) and the project work would be to design/simulate new EAM and detector devices using the process that has been developed to date. The industrial partner of this project would be Rockley photonics.
The requirement of this project is to develop SiGe EAM modulator/detector devices working at different wavelengths in the C-BAND.