Developing Semi-Insulating Silicon Carbide Epitaxy

Microelectronic device technology - Physical Sciences

The project aims to develop Silicon Carbide (SiC) semi-insulating materials for application in the RF and microwave electronics industry. It will consist of materials characterisation and device construction, all using facilities at Warwick. The particular method to construct SiC semi-insulating materials is by the introduction of new precursors in the materials facility Warwick, to be performed by existing Warwick staff. The student will develop the characterisation techniques to define a thick semi-insulating layer using microscopy and basic electrical testing. Knock-on effects must be controlled without transferring to other materials made in the system (e.g. autodoping, memory effect, diffusivity, segregation etc.). This will undergo many loops with the student contributing to improving the material fabrication system by parameters such as purity of control methodology, precursor, pressure, mass flow, temperature etc. Then, the student will construct devices on the developed platform utilising a standard construction process. This will result in new technologies, which could be included in many RF and microwave electronics areas.