The effect of indium concentration on the optical properties of a-plane InGaN/GaN quantum wells grown on r-plane sapphire substrates (2011)

First Author: Badcock T
Attributed to:  Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201001007

Publication URI: http://dx.doi.org/10.1002/pssa.201001007

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 7