The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on $r$-Plane Sapphire Substrates (2011)

First Author: Badcock T
Attributed to:  Nitrides for the 21st century funded by EPSRC


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Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: 8