The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on $r$-Plane Sapphire Substrates (2011)

First Author: Badcock T
Attributed to:  Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1143/JJAP.50.080201

Publication URI: http://dx.doi.org/10.1143/JJAP.50.080201

Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: 8