Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure (2011)

First Author: Hammersley S

Attributed to: Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201001001

Publication URI: http://dx.doi.org/10.1002/pssc.201001001

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: 7-8