Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors (2014)
Attributed to:
Development of an integrated optical E-Probe for GaN power transistor reliability analysis
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.microrel.2014.01.006
Publication URI: http://dx.doi.org/10.1016/j.microrel.2014.01.006
Type: Journal Article/Review
Parent Publication: Microelectronics Reliability
Issue: 5