Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack (2012)

First Author: Benbakhti B
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2012.2218565

Publication URI: http://dx.doi.org/10.1109/led.2012.2218565

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 12