Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With <inline-formula> <tex-math notation="TeX">${\rm GeO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ </tex-math></inline-formula> Stack (2014)

First Author: Jigang Ma
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2014.2314178

Publication URI: http://dx.doi.org/10.1109/ted.2014.2314178

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 5