Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation (2014)
Attributed to:
Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.microrel.2014.09.020
Publication URI: http://dx.doi.org/10.1016/j.microrel.2014.09.020
Type: Journal Article/Review
Parent Publication: Microelectronics Reliability
Issue: 12