Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures (2013)

First Author: Badcock T

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.7567/JJAP.52.08JK10

Publication URI: http://dx.doi.org/10.7567/JJAP.52.08JK10

Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: 8S