Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire (2010)

First Author: Kappers M

Attributed to: LED Lighting for the 21st Century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2009.11.014

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.11.014

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

Issue: 3