Application of highly silicon-doped marker layers in the investigation of unintentional doping in GaN on sapphire. (2010)

First Author: Oliver RA
Attributed to:  Science Bridge Award USA: Harnessing Materials for Energy funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.ultramic.2010.10.008

PubMed Identifier: 21115277

Publication URI: http://europepmc.org/abstract/MED/21115277

Type: Journal Article/Review

Volume: 111

Parent Publication: Ultramicroscopy

Issue: 1

ISSN: 0304-3991