Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions (2011)

First Author: Moran D
Attributed to:  Ultra short gate length diamond FETs for high power/high frequency applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2011.2114871

Publication URI: http://dx.doi.org/10.1109/led.2011.2114871

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 5