AC52F168-E929-4429-B968-B520CFCF516AUltra short gate length diamond FETs for high power/high frequency applicationsFellowshipEP/E054668/1798CB33D-C79E-4578-83F2-72606407192CEPSRCINCOME_ACTUAL50654331A7B4FB-E244-458E-BC0E-A52D41815B7ATwo methods of realising 10 nm T-gate lithographyMicroelectronic Engineering7553be3b82b444fba5ba0d6655fd4a11Bentley S2009-01-01http://dx.doi.org/10.1016/j.mee.2008.12.029http://dx.doi.org/10.1016/j.mee.2008.12.0294-6Journal Article/Review544a40fda04617.32288830