Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells (2013)

First Author: Meneghini M

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.7567/jjap.52.08jg09

Publication URI: http://dx.doi.org/10.7567/jjap.52.08jg09

Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: 8S